VISHAY SIR474DP-T1-GE3

SiR474DP
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, g
0.0095 at VGS = 10 V
20
0.012 at VGS = 4.5 V
20
VDS (V)
30
Qg (Typ.)
8 nC
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
APPLICATIONS
S
3
G
• Notebook CPU Core
- High-Side Switch
4
D
G
D
7
Rectifier
S
2
8
• Halogen-free
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• Optimized for High-Side Synchronous
Operation
• 100 % Rg Tested
• 100 % UIS Tested
D
D
6
D
5
S
Bottom View
Ordering Information: SiR474DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
30
± 20
20g
15b, c
12b, c
50
ID
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
V
20g
IDM
Pulsed Drain Current
Unit
A
20g
3.2b, c
20
20
29.8
19.0
mJ
3.9b, c
2.5b, c
- 55 to 150
260
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Typical
27
3.5
Maximum
32
4.2
Unit
°C/W
Notes:
a. Base on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Packaged Limited.
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
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1
SiR474DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
- 4.7
1.0
2.2
V
± 100
nA
VDS = 30 V, VGS = 0 V
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 10 V
RDS(on)
V
34
30
µA
A
VGS = 10 V, ID = 10 A
0.0075
0.0095
VGS = 4.5 V, ID = 7 A
0.010
0.012
VDS = 15 V, ID = 10 A
30
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
985
VDS = 15 V, VGS = 0 V, f = 1 MHz
76
VDS = 15 V, VGS = 10 V, ID = 10 A
VDS = 15 V, VGS = 4.5 V, ID = 10 A
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
tr
Rise Time
Fall Time
Turn-On Delay Time
Turn-Off Delay Time
2.4
0.3
1.3
2.6
14
25
24
35
tf
9
18
td(on)
8
16
10
20
16
30
9
18
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
td(off)
tf
Fall Time
12
12
tr
Rise Time
27
8
19
td(off)
Turn-Off Delay Time
18
nC
2.3
f = 1 MHz
td(on)
Turn-On Delay Time
pF
205
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
20
ISM
50
IS = 3 A
VSD
0.76
1.1
A
V
Body Diode Reverse Recovery Time
trr
14
28
ns
Body Diode Reverse Recovery Charge
Qrr
5
10
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
8
6
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68996
S-82749-Rev. A, 10-Nov-08
SiR474DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
8.0
VGS = 10 thru 4 V
6.4
I D - Drain Current (A)
I D - Drain Current (A)
40
30
VGS = 3 V
20
4.8
3.2
TC = 25 °C
TC = 125 °C
10
1.6
0
0.0
TC = - 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.015
1300
0.013
1040
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
Ciss
VGS = 4.5 V
0.011
0.009
VGS = 10 V
780
520
Coss
260
0.007
Crss
0
0.0
0.005
0
10
20
30
40
50
4.8
7.2
9.6
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
ID = 10 A
ID = 10 A
1.6
VDS = 20 V
6
VDS = 10 V
VDS = 15 V
4
2
VGS = 10 V
1.4
(Normalized)
R DS(on) - On-Resistance
8
0
0.0
12.0
1.8
10
VGS - Gate-to-Source Voltage (V)
2.4
1.2
VGS = 4.5 V
1.0
0.8
3.7
7.4
11.1
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
14.8
18.5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiR474DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
100
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.1
0.01
0.04
0.03
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
4
5
6
7
8
9
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
10
80
0.2
64
0.0
- 0.2
Power (W)
VGS(th) Variance (V)
1
ID = 5 mA
48
32
- 0.4
ID = 250 µA
16
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68996
S-82749-Rev. A, 10-Nov-08
SiR474DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
46.0
I D - Drain Current (A)
36.8
27.6
Package Limited
18.4
9.2
0.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
36.0
2.20
28.8
1.76
21.6
1.32
Power (W)
Power (W)
Current Derating*
14.4
7.2
0.88
0.44
0.0
0.00
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
www.vishay.com
5
SiR474DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM -- TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
10 -3
4. Surface Mounted
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68996.
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6
Document Number: 68996
S-82749-Rev. A, 10-Nov-08
Package Information
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Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
θ
D4
W
1
M
1
Z
2
D5
D2
e
2
D1
D
2
D
3
4
θ
4
b
3
L1
E3
θ
A1
Backside View of Single Pad
H
K
E2
E4
L
1
D1
D5
2
D2
Detail Z
K1
2
E1
E
D3 (2x) D4
c
A
θ
3
4
Notes
1. Inch will govern.
2 Dimensions exclusive of mold gate burrs.
3. Dimensions exclusive of mold flash and cutting burrs.
E3
Backside View of Dual Pad
MILLIMETERS
DIM.
MIN.
A
0.97
A1
b
0.33
c
0.23
D
5.05
D1
4.80
D2
3.56
D3
1.32
D4
D5
E
6.05
E1
5.79
E2 (for AL product)
3.30
E2 (for other product)
3.48
E3
3.68
E4 (for AL product)
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
0.56
H
0.51
L
0.51
L1
0.06

0°
W
0.15
M
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
b
D2
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
0.57 typ.
3.98 typ.
6.15
5.89
3.48
3.66
3.78
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
0.61
0.61
0.13
0.25
0.125 typ.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
0.038
0
0.013
0.009
0.199
0.189
0.140
0.052
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.71
0.71
0.20
12°
0.36
0.022
0.020
0.020
0.002
0°
0.006
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.0225 typ.
0.157 typ.
0.242
0.232
0.137
0.144
0.149
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
0.024
0.024
0.005
0.010
0.005 typ.
1
0.246
0.236
0.144
0.151
0.154
0.028
0.028
0.008
12°
0.014
Document Number: 71655
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.050
0.174
(4.42)
0.154
(1.27)
0.026
(0.66)
(3.91)
0.024
(0.61)
0.050
0.032
0.040
(1.27)
(0.82)
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72599
Revision: 21-Jan-08
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15
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000