[ /Title (CD74H C03, CD74H CT03) /Subject (High Speed CMOS Logic Quad 2Input CD54HC03, CD74HC03, CD54HCT03, CD74HCT03 Data sheet acquired from Harris Semiconductor SCHS126D High-Speed CMOS Logic Quad 2-Input NAND Gate with Open Drain February 1998 - Revised September 2003 Features Description • Buffered Inputs The ’HC03 and ’HCT03 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with the low power consumption of standard CMOS integrated circuits. All devices have the ability to drive 10 LSTTL loads. The HCT logic family is functionally as well as pin compatible with the standard LS logic family. • Typical Propagation Delay: 8ns at VCC = 5V, CL = 15pF, TA = 25oC • Output Pull-up to 10V • Fanout (Over Temperature Range) - Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads - Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads These open drain NAND gates can drive into resistive loads to output voltages as high as 10V. Minimum values of RL required versus load voltage are shown in Figure 2. • Wide Operating Temperature Range . . . -55oC to 125oC Ordering Information • Balanced Propagation Delay and Transition Times • Significant Power Reduction Compared to LSTTL Logic ICs PART NUMBER • HC Types - 2V to 6V Operation - High Noise Immunity: NIL = 30%, NIH = 30% of VCC at VCC = 5V • HCT Types - 4.5V to 5.5V Operation - Direct LSTTL Input Logic Compatibility, VIL= 0.8V (Max), VIH = 2V (Min) - CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH TEMP. RANGE (oC) PACKAGE CD54HC03F3A -55 to 125 14 Ld CERDIP CD54HCT03F3A -55 to 125 14 Ld CERDIP CD74HC03E -55 to 125 14 Ld PDIP CD74HC03M -55 to 125 14 Ld SOIC CD74HC03MT -55 to 125 14 Ld SOIC CD74HC03M96 -55 to 125 14 Ld SOIC CD74HCT03E -55 to 125 14 Ld PDIP CD74HCT03M -55 to 125 14 Ld SOIC CD74HCT03MT -55 to 125 14 Ld SOIC CD74HCT03M96 -55 to 125 14 Ld SOIC NOTE: When ordering, use the entire part number. The suffix 96 denotes tape and reel. The suffix T denotes a small-quantity reel of 250. Pinout CD54HC03, CD54HCT03 (CERDIP) CD74HC03, CD74HCT03 (PDIP, SOIC) TOP VIEW 1A 1 14 VCC 1B 2 13 4B 1Y 3 12 4A 2A 4 11 4Y 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © 2003, Texas Instruments Incorporated 1 CD54HC03, CD74HC03, CD54HCT03, CD74HCT03 Functional Diagram 1A 1B 2A 2B 3A 3B 4A 4B 1 3 2 4 5 6 9 8 1Y 2Y 3Y 10 12 11 13 4Y GND = 7 VCC = 14 TRUTH TABLE A B Y L L Z (Note 1) H (Note 2) H L Z (Note 1) H (Note 2) L H Z (Note 1) H (Note 2) H H L L NOTES: 1. Without pull-up (high impedance) 2. Requires pull-up (RL to VL) Logic Symbol nA nY nB 2 CD54HC03, CD74HC03, CD54HCT, CD74HCT03 Absolute Maximum Ratings Thermal Information DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V DC Input Diode Current, IIK For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA DC Output Diode Current, IOK For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA DC Output Source or Sink Current per Output Pin, IO For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA DC Drain Current, per Output, IO For -0.5V < VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25mA DC VCC or Ground Current, ICC or IGND . . . . . . . . . . . . . . . . . .±50mA Thermal Resistance (Typical, Note 3) θJA (oC/W) E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Maximum Junction Temperature (Hermetic Package or Die) . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Supply Voltage Range, VCC HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC Input Rise and Fall Time 2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max) 4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max) 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 3. The package thermal impedance is calculated in accordance with JESD 51-7. DC Electrical Specifications TEST CONDITIONS PARAMETER SYMBOL VI (V) VIH - 25oC IO (mA) VCC (V) -40oC TO 85oC -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 2 1.5 - - 1.5 - 1.5 - V 4.5 3.15 - - 3.15 - 3.15 - V 6 4.2 - - 4.2 - 4.2 - V 2 - - 0.5 - 0.5 - 0.5 V 4.5 - - 1.35 - 1.35 - 1.35 V 6 - - 1.8 - 1.8 - 1.8 V HC TYPES High Level Input Voltage Low Level Input Voltage Low Level Output Voltage CMOS Loads VIL VOL - VIH or VIL Low Level Output Voltage TTL Loads - - 0.02 2 - - 0.1 - 0.1 - 0.1 V 0.02 4.5 - - 0.1 - 0.1 - 0.1 V 0.02 6 - - 0.1 - 0.1 - 0.1 V - - - - - - - - - V 4 4.5 - - 0.26 - 0.33 - 0.4 V 5.2 6 - - 0.26 - 0.33 - 0.4 V II VCC or GND - 6 - - ±0.1 - ±1 - ±1 µA ICC VCC or GND 0 6 - - 2 - 20 - 40 µA High Level Input Voltage VIH - - 4.5 to 5.5 2 - - 2 - 2 - V Low Level Input Voltage VIL - - 4.5 to 5.5 - - 0.8 - 0.8 - 0.8 V Input Leakage Current Quiescent Device Current HCT TYPES 3 CD54HC03, CD74HC03, CD54HCT03, CD74HCT03 DC Electrical Specifications (Continued) TEST CONDITIONS PARAMETER SYMBOL VI (V) Low Level Output Voltage CMOS Loads VOL VIH or VIL IO (mA) VCC (V) -55oC TO 125oC MIN TYP MAX MIN MAX MIN MAX UNITS 4.5 - - 0.1 - 0.1 - 0.1 V 4 4.5 - - 0.26 - 0.33 - 0.4 V ±0.1 - ±1 - ±1 µA II VCC and GND - 5.5 - ICC VCC or GND 0 5.5 - - 2 - 20 - 40 µA ∆ICC (Note 4) VCC - 2.1 - 4.5 to 5.5 - 100 360 - 450 - 490 µA Quiescent Device Current Additional Quiescent Device Current Per Input Pin: 1 Unit Load -40oC TO 85oC 0.02 Low Level Output Voltage TTL Loads Input Leakage Current 25oC NOTE: 4. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA. HCT Input Loading Table INPUT UNIT LOADS nA, nB 1 NOTE: Unit Load is ∆ICC limit specified in DC Electrical Specifications table, e.g., 360µA max at 25oC. Switching Specifications Input tr, tf = 6ns PARAMETER SYMBOL TEST CONDITIONS tPLH, tPHL CL = 50pF 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS 2 - - 100 - 125 - 150 ns 4.5 - - 20 - 25 - 30 ns 6 - - 17 - 21 - 26 ns HC TYPES Propagation Delay, Input to Output (Figure 1) Propagation Delay, Data Input to Output Y tPLH, tPHL CL = 15pF 5 - 8 - - - - - ns Transition Times (Figure 1) tTLH, tTHL CL = 50pF 2 - - 75 - 95 18 110 ns 4.5 - - 15 - 19 - 22 ns 6 - - 13 - 16 - 19 ns Input Capacitance Power Dissipation Capacitance (Notes 5, 6) CI - - - - 10 - 10 - 10 pF CPD - 5 - 6.4 - - - - - pF HCT TYPES Propagation Delay, Input to Output (Figure 1) tPLH, tPHL CL = 50pF 4.5 - - 24 - 30 - 36 ns Propagation Delay, Data Input to Output Y tPLH, tPHL CL = 15pF 5 - 9 - - - - - ns Transition Times (Figure 1) tTLH, tTHL CL = 50pF 4.5 - - 15 - 19 - 22 ns - - - 10 - 10 - 10 pF Input Capacitance CI - 4 CD54HC03, CD74HC03, CD54HCT03, CD74HCT03 Switching Specifications Input tr, tf = 6ns (Continued) PARAMETER SYMBOL TEST CONDITIONS Power Dissipation Capacitance (Notes 5, 6) CPD - 25oC -40oC TO 85oC -55oC TO 125oC VCC (V) MIN TYP MAX MIN MAX MIN MAX UNITS 5 - 9 - - - - - pF NOTES: 5. CPD is used to determine the dynamic power consumption, per gate. 6. PD = CPD VCC2 fi + Σ (CL VCC2 fo) + Σ (VL2/RL) (Duty Factor “Low”) where fi = input frequency, fo = output frequency, CL = output load capacitance, VCC = supply voltage, Duty Factor “Low” = percent of time output is “low”, VL = output voltage, RL = pull-up resistor. Test Circuits and Waveforms 800 INPUT LEVEL VS RL MIN, PULLUP RESISTOR (Ω) VS tPZL tPLZ VOH 90% nY 10% VOL tTHL OUTPUT LOW OUTPUT OFF OUTPUT LOW 1kΩ nA(nB) VCC OPEN DRAIN NAND GATE nB(nA) 500 HCT 400 VCC = 5V ±10% 300 VL HC RL 200 HC/HCT03 100 0 FIGURE 1. TRANSITION TIMES, PROPAGATION DELAY TIMES, AND TEST CIRCUIT tr = 6ns VO 1 2 3 4 5 6 7 VL, LOAD VOLTAGE (V) GND tTLH GND tTHL 90% 50% 10% INVERTING OUTPUT 3V 2.7V 1.3V 0.3V INPUT tTHL 9 tf = 6ns tr = 6ns VCC 90% 50% 10% 8 10 FIGURE 2. MINIMUM RESISTIVE LOAD vs LOAD VOLTAGE tf = 6ns tPHL 600 0.8V (HCT VIL MAX) ≤ 1.35V (HC VIL MAX) RL 0.26V MAX = R = 4mA VO ON o 65Ω AT 25 C RON 50pF VCC INPUT VL 700 tTLH 90% 1.3V 10% INVERTING OUTPUT tPHL tPLH FIGURE 3. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC tPLH FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC 5 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. 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