MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output Features • • • • • • High Speed: tPD = 4.9 ns (Typ) at VCC = 5 V Low Internal Power Dissipation: ICC = 1 mA (Max) at TA = 25°C Power Down Protection Provided on Inputs Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 70; Equivalent Gates = 18 Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A/SOT−353/SC−70 DF SUFFIX CASE 419A M The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set the output switching level. This allows the MC74VHC1G135 to be used to interface 5 V circuits to circuits of any voltage between VCC and 7 V using an external resistor and power supply. The MC74VHC1G135 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. The MC74VHC1G135 can be used to enhance noise immunity or to square up slowly changing waveforms. VZ M G G 1 5 5 VZ M G G 1 TSOP−5/SOT−23/SC−59 DT SUFFIX CASE 483 1 VZ = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT IN B 1 5 1 VCC OVT IN A 2 GND 3 4 IN B 2 IN A 3 GND 4 OUT Y 5 VCC OUT Y FUNCTION TABLE Inputs Figure 1. Pinout (Top View) IN A IN B & OUT Y Figure 2. Logic Symbol Output A B Y L L H H L H L H Z Z Z L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 16 1 Publication Order Number: MC74VHC1G135/D MC74VHC1G135 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage Characteristics −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage −0.5 to 7.0 V IIK Input Diode Current −20 mA IOK Output Diode Current +20 mA IOUT DC Output Current, per Pin +25 mA ICC DC Supply Current, VCC and GND PD Power dissipation in still air qJA Thermal resistance TL VOUT < GND; VOUT > VCC +50 mA SC−88A, TSOP−5 200 mW SC−88A, TSOP−5 333 °C/W Lead temperature, 1 mm from case for 10 secs 260 °C TJ Junction temperature under bias +150 °C Tstg Storage temperature −65 to +150 °C MSL Moisture Sensitivity FR Flammability Rating VESD Level 1 Oxygen Index: 28 to 34 ESD Withstand Voltage ILatchup Latchup Performance UL 94 V−0 @ 0.125 in Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above VCC and Below GND at 125°C (Note 4) > 2000 > 200 N/A V ±500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 2.0 5.5 V VIN DC Input Voltage 0.0 5.5 V DC Output Voltage 0.0 7.0 V VOUT TA Operating Temperature Range tr , tf Input Rise and Fall Time VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V −55 +125 °C 0 0 No limit No limit ns/V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 MC74VHC1G135 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions TA = 25°C TA ≤ 85°C −55 ≤ TA ≤ 125°C VCC (V) Min Typ Max Min Max Min Max Unit VT+ Positive Threshold Voltage 3.0 4.5 5.5 1.50 2.35 2.80 1.88 2.66 3.21 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 1.50 2.35 2.80 2.25 3.10 3.70 V VT− Negative Threshold Voltage 3.0 4.5 5.5 0.65 1.10 1.45 1.03 1.62 2.02 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 0.65 1.10 1.45 1.40 2.10 2.60 V VH Hysteresis Voltage 3.0 4.5 5.5 0.30 0.40 0.50 0.85 1.05 1.20 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 0.30 0.40 0.50 1.60 2.00 2.25 V VOL Maximum Low−Level Output Voltage 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 1.0 20 40 mA IOFF Power Off−Output Leakage Current VOUT = 5.5 V VIN = 5.5 V 0 0.25 2.5 5 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr/tf = 3.0 ns TA = 25°C Symbol Parameter tPZL Maximum Output Enable Time, A or B to Y tPLZ CIN Maximum Output Disable Time Min Test Conditions TA ≤ 85°C −55 ≤ TA ≤ 125°C Typ Max Min Max Min Max Unit ns VCC = 3.3 ± 0.3 V RL = RI = 500 W CL = 15 pF CL = 50 pF 7.6 10.1 11.9 15.4 1.0 1.0 14.0 17.5 1.0 1.0 16.1 19.6 VCC = 5.0 ± 0.5 V RL = RI = 500 W CL = 15 pF CL = 50 pF 4.9 6.4 7.7 9.7 1.0 1.0 9.0 11.0 1.0 1.0 10.3 12.3 VCC = 3.3 ± 0.3 V RL = RI = 500 W CL = 50 pF 10.1 15.4 17.5 19.6 VCC = 5.0 ± 0.5 V RL = RI = 500 W CL = 50 pF 6.4 9.7 11.0 12.3 5.0 10 10 10 Maximum Input Capacitance ns pF Typical @ 25°C, VCC = 5.0 V CPD 16 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 MC74VHC1G135 A VCC VCC − 7 V OVT RL VCC A or B 50% tPZL B GND tPLZ HIGH IMPEDANCE 50% VCC Y Figure 4. Output Voltage Mismatch Application VOL +0.3 V Figure 5. Switching Waveforms VCC PULSE GENERATOR R1 DUT RT CL VCC x 2 RL CL = 50 pF equivalent (Includes jig and probe capacitance) RL = R1 = 500 W or equivalent RT = ZOUT of pulse generator (typically 50 W) Figure 6. Test Circuit MC74VHC1G135 VCC A 2.2 kW B MC74VHC1G03 C D E = (A • B) + (C+D) Figure 7. Complex Boolean Functions VCC B 1 A 2 3 VCC MC74VHC1G135 1.5 V 3.3 V 5 R LED A 4 220 W GTL B Figure 8. LED Driver Figure 9. GTL Driver ORDERING INFORMATION Device Package MC74VHC1G135DFT1 SC70−5 / SC−88A / SOT−353 M74VHC1G135DFT1G SC70−5 / SC−88A / SOT−353 (Pb−Free) MC74VHC1G135DFT2 SC70−5 / SC−88A / SOT−353 M74VHC1G135DFT2G SC70−5 / SC−88A / SOT−353 (Pb−Free) MC74VHC1G135DTT1 SOT23−5 / TSSOP−5 / SC59−5 M74VHC1G135DTT1G SOT23−5 / TSSOP−5 / SC59−5 (Pb−Free) Shipping† 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MC74VHC1G135 PACKAGE DIMENSIONS SC−88A, SOT−353, SC−70 CASE 419A−02 ISSUE J A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1G135 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE H D NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 5X 0.20 C A B M 5 1 4 2 L 3 B S K DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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