BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http://onsemi.com • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • • • ESD Rating − Machine Model: >400 V AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VCEO Collector−Base Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VCBO Emitter−Base Voltage BC846, SBC846 BC847, BC850, SBC847 BC848, BC849, SBC848 VEBO Collector Current − Continuous IC Value Vdc 2 Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range SOT−23 CASE 318 STYLE 6 Vdc 80 50 30 MARKING DIAGRAM Vdc 6.0 6.0 5.0 100 XX M G G mAdc 1 XX M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C 1 65 45 30 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic 3 Unit Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 11 1 Publication Order Number: BC846ALT1/D BC846ALT1G Series, SBC846ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage BC846A, B, SBC846A, B BC847A, B, C, BC850B, C, SBC847C (IC = 10 mA) BC848A, B, C, BC849B, C, SBC848B V(BR)CEO 65 45 30 − − − − − − V Collector −Emitter Breakdown Voltage BC846A, B (IC = 10 mA, VEB = 0) BC847A, B, C BC850B, C, SBC847C BC848A, B, C, BC849B, C, SBC848B V(BR)CES 80 50 30 − − − − − − V Collector −Base Breakdown Voltage (IC = 10 mA) BC846A, B, SBC846A, B BC847A, B, C, BC850B, C, SBC847C BC848A, B, C, BC849B, C, SBC848B V(BR)CBO 80 50 30 − − − − − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846A, B, SBC846A, B BC847A, B, C, BC850B, C, SBC847C BC848A, B, C, BC849B, C, SBC848B V(BR)EBO 6.0 6.0 5.0 − − − − − − V ICBO − − − − 15 5.0 nA mA hFE − − − 90 150 270 − − − − 110 200 180 290 220 450 420 520 800 OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A, SBC846A (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B, SBC846B, SBC848B BC847C, BC848C, SBC847C (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A, SBC846A, SBC846A BC846B, BC847B, BC848B, BC849B, BC850B, SBC846B, SBC848B BC847C, BC848C, BC849C, BC850C, SBC847C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF BC846A,B, BC847A,B,C, BC848A,B,C, SBC846A, B, SBC847C, SBC848B BC849B,C, BC850B,C http://onsemi.com 2 pF dB − − − − 10 4.0 BC846ALT1G Series, SBC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 300 0.18 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 200 25°C −55°C 100 0 0.001 0.01 0.08 0.06 −55°C 0.04 0.02 0.0001 0.001 0.01 0.1 Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.10 IC, COLLECTOR CURRENT (A) −55°C IC/IB = 20 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.12 IC, COLLECTOR CURRENT (A) 1.0 0.9 150°C 0.14 0 1 0.1 IC/IB = 20 0.16 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 0.1 BC846ALT1G Series, SBC846ALT1G Series BC846A, BC847A, BC848A, SBC846A 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 6. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 5. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 7. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 8. Current−Gain − Bandwidth Product http://onsemi.com 4 50 BC846ALT1G Series, SBC846ALT1G Series BC846B, SBC846B 0.30 VCE = 1 V 150°C 500 400 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 25°C 300 −55°C 200 100 0 0.001 0.01 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 9. DC Current Gain vs. Collector Current Figure 10. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.10 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 25°C 0.15 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 0.20 0 1 0.1 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current http://onsemi.com 5 0.1 BC846ALT1G Series, SBC846ALT1G Series 2.0 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BC846B, SBC846B TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 1.4 1.8 qVB for VBE 2.6 3.0 20 0.2 Figure 13. Collector Saturation Region f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 2.0 Cob 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 0.5 10 20 50 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 100 200 Figure 14. Base−Emitter Temperature Coefficient 40 4.0 -55°C to 125°C 2.2 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 15. Capacitance Figure 16. Current−Gain − Bandwidth Product http://onsemi.com 6 BC846ALT1G Series, SBC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B 0.30 VCE = 1 V 150°C 500 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 400 25°C 300 −55°C 200 100 0 0.001 0.01 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 17. DC Current Gain vs. Collector Current Figure 18. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.10 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 25°C 0.15 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 0.20 0 1 0.1 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Voltage vs. Collector Current http://onsemi.com 7 0.1 BC846ALT1G Series, SBC846ALT1G Series BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 22. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 23. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 24. Current−Gain − Bandwidth Product http://onsemi.com 8 50 BC846ALT1G Series, SBC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 900 hFE, DC CURRENT GAIN 0.30 150°C VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1000 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0.01 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 25. DC Current Gain vs. Collector Current Figure 26. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.10 IC, COLLECTOR CURRENT (A) −55°C 0.9 25°C 0.8 0.7 150°C 0.6 0.5 0.4 0.3 0.2 25°C 0.15 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 0.20 0 1 0.1 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current http://onsemi.com 9 0.1 BC846ALT1G Series, SBC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 C, CAPACITANCE (pF) 5.0 TA = 25°C Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 20 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 30. Base−Emitter Temperature Coefficient 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 29. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 31. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 32. Current−Gain − Bandwidth Product http://onsemi.com 10 50 BC846ALT1G Series, SBC846ALT1G Series 1 1S 0.1 IC, COLLECTOR CURRENT (A) 100 mS 10 mS 1 mS Thermal Limit 0.01 0.001 1 10 100 100 mS 10 mS 1 mS 0.1 1S Thermal Limit 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 33. Safe Operating Area for BC846A, BC846B Figure 34. Safe Operating Area for BC847A, BC847B, BC847C, BC850B, BC850C 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 1 100 mS 10 mS 1S 0.1 Thermal Limit 0.01 0.001 1 mS 0.1 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 35. Safe Operating Area for BC848A, BC848B, BC848C, BC849B, BC849C http://onsemi.com 11 100 BC846ALT1G Series, SBC846ALT1G Series ORDERING INFORMATION Device BC846ALT1G SBC846ALT1G BC846ALT3G BC846BLT1G SBC846BLT1G BC846BLT3G SBC846BLT3G Marking Package Shipping† 1A SOT−23 (Pb−Free) 3,000 / Tape & Reel 1A SOT−23 (Pb−Free) 10,000 / Tape & Reel 1B SOT−23 (Pb−Free) 3,000 / Tape & Reel 1B SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel 1F SOT−23 (Pb−Free) 3,000 / Tape & Reel 1F SOT−23 (Pb−Free) 10,000 / Tape & Reel 1G SOT−23 (Pb−Free) 3,000 / Tape & Reel 1G SOT−23 (Pb−Free) 10,000 / Tape & Reel 1J SOT−23 (Pb−Free) 3,000 / Tape & Reel 1K SOT−23 (Pb−Free) 3,000 / Tape & Reel 1K SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel SOT−23 (Pb−Free) 3,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel BC847ALT1G BC847ALT3G BC847BLT1G SBC847BLT1G BC847BLT3G BC847CLT1G SBC847CLT1G BC847CLT3G BC848ALT1G BC848BLT1G SBC848BLT1G BC848BLT3G 1E BC848CLT1G BC848CLT3G 1L BC849BLT1G BC849BLT3G 2B BC849CLT1G BC849CLT3G BC850BLT1G BC850CLT1G 2C 2F SOT−23 (Pb−Free) 2G SOT−23 (Pb−Free) 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 12 BC846ALT1G Series, SBC846ALT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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