TSP058SB - TSP320SB FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life THYRISTOR SMB/DO-214AA SUMMARY ELECTRICAL CHARACTERISTICS Rated Repetitive PeakOff-State Voltage Breakover Voltage On-State Voltage Max. Max. Max. Max. Max. VDRM VBO @ IBO V T @ 1A I DRM I BO IH C O @ 0 V dc V V V µA mA mA pF TSP058SB 58 77 5 5 800 150 TSP065SB 65 88 5 5 800 150 67 TSP075SB 75 98 5 5 800 150 67 TSP090SB 90 130 5 5 800 150 57 61 19 21 TSP120SB 120 160 5 5 800 150 50 58 17 20 Part Number Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Min. Typ. 70 Max. Typ. Max. C O @ 5 0 V dc pF 100 24 29 90 22 28 78 23 27 TSP140SB 140 180 5 5 800 150 49 54 16 19 TSP160SB 160 220 5 5 800 150 46 53 15 18 TSP190SB 190 260 5 5 800 150 45 53 14 18 TSP220SB 220 300 5 5 800 150 44 52 13 18 TSP275SB 275 350 5 5 800 150 44 51 13 18 TSP320SB 320 400 5 5 800 150 43 50 13 17 notes (1,3) (3,5,6) (3) (3) (3) (2,3) (3) (3) (3) (3) NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 °C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KΩ, 1/2 AC cycle Ver: June 2001 PAGE 1 TSP058SB - TSP320SB PRELIMINARY SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE TSP058SB - TSP320SB Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: • Ambient operating temperature range • Maximum telephone line operating current (highest battery and shortest copper loop) • Maximum operating voltage: (Maximum DC bias + peak ringing voltage) • Maximum surge current • System voltage damage threshold • Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. THYRISTOR 3. Select surge current ratings (IPPS and ITSM) ≥ those which the application must withstand. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. TSP058SB - TSP320SB PRELIMINARY SELECTION GUIDE 8. Independently evaluate and test the suitability and performance of the device in the application MAXIMUM SURGE RATINGS (TJ = 25 ºC UNLESS OTHERWISE NOTED) Rating Non-Repetitive Peak Pulse Current Non-Repetitive Peak On-State Surge Current Symbol I PPS I TSM Short-Circuit Current Wave 2/10 µs 8/20 µs 10/160 µs 5/310 µs 10/560 µs 10/1000 µs Open-Circuit Voltage Wave 2/10 µs 1.2/50 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs Value 300 A 225 A 150 A 115 A 100 A 80 A Notes (1,2,4,5,6) 30A (1,2,3,4) Notes: 1. Thermal accumulation between successive surge tests is not allowed. 2. The device under test initially must be in thermal equilibrium with TJ = 25 °C. % Ipps 100% 80% 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated TJ. Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over a device's typical operating life. 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge evaluation. 60% 40% 20% 0% To Ta Tb Time T1 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0 Ver: June 2001 PAGE 2 TSP058SB - TSP320SB Unit Rating Symbol Value Storage Junction Temperature Range TSTG -50 to 150 O Operating Junction Temperature Range TJ -40 to 150 O Operating Ambient Temperature Range Ta -40 to 65 O C C C THYRISTOR Notes: PCB board mounted on minimum foot print. THERMAL CHARACTERISTICS Characteristic Symbol Value Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. RθJL Max. 20 Unit O C/W Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering. ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED) Parameters Test Conditions Max. Unit I DRM 5 µA f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 KΩ , 1/2 AC cycle I BO 800 mA 10/1000µs waveform, ISC = 10A, VOC = 62 V, RL = 400 Ω IH Repetitive Peak Off-State Current VD = rated VDRM Breakover Current Holding Current1 On-State Voltage I T = 1 A, Tw = 300 µs, 1 pulse Symbol VT Min. 150 mA 5 V Notes: Specific IH values are available by request. Ver: June 2001 PAGE 3 TSP058SB - TSP320SB PRELIMINARY MAXIMUM THERMAL RATINGS TSP058SB - TSP320SB PRELIMINARY +I I PPS I TSM IT I BO IH I DRM +V VT V DRM V BO TSP058SB - TSP320SB _V THYRISTOR I BR V BR _I Characteristic Symbol Value VBO Breakover Voltage Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise I BO Breakover Current Instantaneous current flowing at the breakover voltage (VBO) IH Holding Current Minimum current required to maintain the device in the on-state IT On-state current Current through the device in the on-state condition V On-state voltage Voltage across the device in the on-state condition at a specified current (IT) VDRM Rated Repetitive Peak Off-State Voltage The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages I DRM Repetitive Peak Off-State Current The maximum (peak) value of current that results from the application of VDRM I PPS Non-Repetitive Peak pulse current Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test di/dt Critical rate of rise of on-state current Rated value of the rate of rise of current that the device can withstand without damage. dv/dt Critical Rate of Rise of Off-State Voltage The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state. T Ver: June 2001 PAGE 4 TSP058SB - TSP320SB F = 1 MHz, Vac = 15 mVrms Off-State Capacitance CO pF 1 V dc Typ. 2 V dc Max. Typ. 5 V dc Max. Typ. 50 V dc Typ. Max. Max. Typ. Max. TSP058SB 70 100 59 74 53 68 45 59 24 29 TSP065SB 67 90 58 69 52 63 43 56 22 28 TSP075SB 67 78 56 64 49 58 42 49 23 27 TSP090SB 57 61 48 50 42 46 35 38 19 21 TSP120SB 50 58 42 45 38 50 31 33 17 20 TSP140SB 49 54 40 43 36 43 30 32 16 19 TSP160SB 46 53 38 40 34 36 28 30 15 18 TSP190SB 45 53 38 39 33 35 28 30 14 18 TSP220SB 44 52 37 39 32 35 27 30 13 18 TSP275SB 44 51 37 39 32 34 27 29 13 18 TSP320SB 43 50 37 38 32 34 27 29 13 17 MECHANICAL DATA • Case: JEDEC DO-214AA molded plastic SMB / DO-214AA Unit: inch ( mm ) • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 .155 (3.94) .130 (3.30) • Polarity: Bi-directional Standard packaging: 12mm tape (EIA-481) .083 (2.11) .075 (1.91) • Weight: 0.003 ounce, 0.093 gram .185 (4.70) .160 (4.06) .012 (.305) .006 (.152) .050 (1.27) .008(.203) .002(.051) .030 (0.76) .220 (5.59) .200 (5.08) Ver: June 2001 PAGE 5 THYRISTOR 0 V dc TSP058SB - TSP320SB Part Number .096 (2.44) .083 (2.13) PRELIMINARY CAPACITANCE CHARACTERISTICS TSP058SB - TSP320SB Marking Code TSP058SB 058B TSP065SB 065B TSP075SB 075B TSP090SB 090B TSP120SB 120B TSP140SB 140B TSP160SB 160B TSP190SB 190B TSP220SB 220B TSP275SB 275B TSP320SB 320B PJ YM 058C 1st Line: PJ- PanJit logo Y- Last digit of calendar year M- Month 2nd line: Marking code ORDER & PACKING INFORMATION Device Packing Min. Order Q'ty Order As Remark 13" Tape & Reel 3,000 pcs TSPxxxSB Standard Packing 7" Tape & Reel 5 0 0 p cs TSPxxxSB-7 TSPxxxSB Ver: June 2001 THYRISTOR Part Number TSP058SB - TSP320SB PRELIMINARY DEVICE MARKING CODE PAGE 6 TSP058SB - TSP320SB 90 70 TSP075SC 60 Capacitance (pF) 60 B series device 50 40 30 100 150 200 250 50 TSP140SC 40 TSP190SC 30 20 A series device 20 50 TSP120SC THYRISTOR Capacitance (pF) C series device 70 300 350 10 0.1 1 VDRM (V) V D=0 Volts DC f=1 M HZ 10 100 VD Off-state Voltage (V) v d=15mV RMS AC O T J= 25 C TYPICAL CAPACITANCE V.S. RATED REPETITIVE OFF-STATE VOLTAGE f=1 M HZ v d=15mV RMS AC O T J= 25 C TYPICAL CAPACITANCE V.S. OFF-STATE VOLTAGE 100 TSP220SC 10 1 0.1 TSP220SB 0.01 0.001 0.0001 0 TSP220SB 20 40 60 80 100 120 140 150 O TJ ( C ) TYPICAL OFF-STATE CURRENT V.S JUNCTION TEMPERATURE IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified. © Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw email: [email protected] Ver: June 2001 PAGE 7 TSP058SB - TSP320SB 80 I D, Off-State Current (mA) PRELIMINARY RATING AND CHARACTERISTIC CURVES