DATA SHEET TSP058A~TSP320A AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE FEATURES DO-15 Unit: inch ( mm ) • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 .034(.86) .028(.71) 1.0(25.4) MIN. • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL .300(7.6) .230(5.8) • Low capacitance, High surge (A, B, C rating available), precise voltage limiting, Long life MECHANICAL DATA • Case: JEDEC DO-15 molded plastic .140(3.6) .104(2.6) 1.0(25.4) MIN. • Te r m i n a l s : P l a t e d A x i a l l e a d s , s o l d e r a b l e p e r MIL-STD-750, Method 2026 • Polarity: Bi-directional • Weight: 0.015 ounce, 0.4 gram SUMMARY ELECTRICAL CHARACTERISTICS Rated Repetitive PeakOff-State Voltage Part Number Breakover Voltage On-State Voltage Repetitive Breakover Holding Off-State Capacitance PeakOff-State Current Currnet (f = 1 MHz , Vac = 15 mVRMS) Current Max. Max. Max. Max. Max. Min. VDRM VBO @ IBO V T @ 1A I DRM I BO IH Typ. C O @ 0 V dc Max. C O @ 5 0 V dc Typ. Max. V V V µA mA mA pF pF TSP058A 58 77 5 5 800 150 44 66 16 24 TSP065A 65 88 5 5 800 150 39 64 15 23 TSP075A 75 98 5 5 800 150 37 57 13 20 TSP090A 90 130 5 5 800 150 34 54 12 18 TSP120A 120 160 5 5 800 150 32 48 12 17 TSP140A 140 180 5 5 800 150 29 47 9 16 TSP160A 160 220 5 5 800 150 28 43 9 15 TSP190A 190 260 5 5 800 150 28 40 8 14 TSP220A 220 300 5 5 800 150 27 40 8 14 TSP275A 275 350 5 5 800 150 27 38 8 13 TSP320A 320 400 5 5 800 150 27 38 8 13 notes (1,3) (3,5,6) (3) (3) (3) (2,3) (3) (3) (3) (3) NOTES: 1. Specific VDRM values are available by request. 2. Specific IH values are available by request. 3. All ratings and characteristics are at 25 °C unless otherwise specified. 4. VDRM applies for the life of the device. IDRM will be in spec during and following operation of the device. 5. VBO1 is at 100V/msec, ISC =10Apk, VOC=1KVpk, 10/1000 Waveform 6. VBO2 is at f = 60 Hz, ISC = 1 A(RMS), Vac = 1KV(RMS), RL = 1 KW, 1/2 AC cycle DATE : SEP.02.2002 PAGE . 1 CAPACITANCE CHARACTERISTICS F = 1 MHz, Vac = 15 mVrms Off-State C apacitance CO pF Part N umber 0 V dc 1 V dc 2 V dc 5 V dc 50 V dc Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. TSP058A 44 66 40 51 36 49 33 44 16 Max. 24 TSP065A 39 64 35 49 31 47 28 42 15 23 TSP075A 37 57 33 42 29 40 26 35 13 20 TSP090A 34 54 30 39 26 37 23 32 12 18 TSP120A 32 48 28 33 24 31 21 26 12 17 TSP140A 29 47 25 32 21 30 18 25 9 16 TSP160A 28 43 25 27 21 24 18 20 9 15 TSP190A 28 40 24 25 20 23 17 18 8 14 TSP220A 27 40 23 25 19 23 16 18 8 14 TSP275A 27 38 23 24 19 22 16 17 8 13 TSP320A 27 38 23 24 19 22 16 17 8 13 f=1 M HZ v d=15mV RMS AC RATING AND CHARACTERISTIC CURVES O v d=15mV RMS AC f=1 M HZ T J= 25 C O T J= 25 C 30 25 50 40 Capacitance (pF) Capacitance (pF) 60 V D=0 Volts DC 30 20 TSP220SA 20 15 V D=50 Volts DC 10 10 0 50 100 150 200 300 250 350 5 0.1 1 VDRM Typical Capacitance v.s. Rated Repetitive Off-state Voltage 10A, 10/1000 microseconds TSP220SC 10 300 1 0.1 I H , Holding Current (mA) I D, Off-State Current (mA) 100 Typical Capacitance v.s. Off-state Voltage 100 TSP220SB 0.01 0.001 0.0001 0 10 VD Off-state Voltage (V) TSP220SA 250 200 150 100 20 40 60 80 100 120 140 150 25 0 25 50 75 100 125 O TJ , Junction Temperature ( C) O TJ ( C ) Typical Off-state Current v.s Junction Temperature DATE : SEP.02.2002 Typical Holding Current PAGE . 2 RATING AND CHARACTERISTIC CURVES 10A, 10/1000 microseconds 10A, 10/1000 microseconds -1.0 Temperature Coefficient (mA/ oC) Temperature Coefficient (mA/ oC) -0.1 -1.0 -1.5 -2.0 -2.5 -3.0 -25 0 25 50 75 100 125 -1.5 -2.0 -2.5 -3.0 -3.5 150 200 250 300 350 O O TJ , Junction Temperature ( C) TJ , Junction Temperature ( C) Typical Holding Current Temperature Coefficient Typical Holding Current Temperature Coefficient Temperature Coefficient of VDRM , % / oC .16 0.14 0.12 0.1 0.08 50 100 150 200 250 300 350 o Rated VDRM at TJ=25 C (V) Temperature Coefficient of VDRM IMPORTANT NOTICE This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation of the device in the application. It will help the customer's technical experts determine that the device is compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed to be reliable and accurate. The specifications and information herein are subject to change without notice. New products and improvements in products and their characterization are constantly in process. This provides a superior performing and the highest value product. The factory should be consulted for the most recent information and for any special characteristics not described or specified. © Copyright PanjIt International Inc. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. PanJit Internatioal Inc. http://www.panjit.com.tw DATE : SEP.02.2002 email: [email protected] PAGE . 3 SELECTION GUIDE Follow these steps to select the proper Thyristor surge protector for your application: 1. Define the operating parameters for the circuit: • Ambient operating temperature range • Maximum telephone line operating current (highest battery and shortest copper loop) • Maximum operating voltage: (Maximum DC bias + peak ringing voltage) • Maximum surge current • System voltage damage threshold • Select device with an off-state voltage rating (VDRM) above the maximum operating voltage at the minimum operating temperature. 3. Select surge current ratings (IPPS and ITSM) ³ those which the application must withstand. 4. Verify that the minimum holding current of the device at the maximum ambient temperature is above the maximum dc current of the system. 5. Verify that the maximum breakover voltage of the device is below the system damage threshold. 6. Verify that the circuit's ambient operating temperatures are within the device's operating temperature range. 7. Verify that the device's dimensions fit the application's space considerations. 8. Independently evaluate and test the suitability and performance of the device in the application MAXIMUM SURGE RATINGS (TJ = 25 °C UNLESS OTHERWISE NOTED) Rating Non-Repetitive Peak Pulse Current Non-Repetitive Peak On-State Surge Current Symbol I PPS I TSM Short-Circuit Current Wave 2/10 µs 8/20 µs 10/160 µs 5/310 µs 10/560 µs 10/1000 µs Open-Circuit Voltage Wave 2/10 µs 1.2/50 µs 10/160 µs 10/700 µs 10/560 µs 10/1000 µs Value 175 A 150 A 100 A 85 A 70 A 50 A Notes 20A (1,2,4,5,6) (1,2,3,4) Notes: 1. Thermal accumulation between successive surge tests is not allowed. % Ipps 100% 2. The device under test initially must be in thermal equilibrium with TJ = 25 °C. 80% 3. Test at 1 cycle, 60 Hz. 4. Surge ratings are non-repetitive because instantaneous junction temperatures may exceed the maximum rated T J . 60% Nevertheless, devices will survive many surge applications without degradation. Surge capability will not degrade over 40% a device's typical operating life. 20% 5. Adjust the surge generator for optimum current-wave accuracy when both voltage and current wave specifications cannot be exactly met. The current wave is more important than the voltage wave for accurate surge 0% To Ta Tb Time T1 evaluation. 6. The waveform is defined as A/B ms where: A: (Virtual front time) = 1.25 X Rise time = 1.25 X (Tb - Ta) B (Duration time to 50% level of Ipps) = T1 - T0 DATE : SEP.02.2002 PAGE . 4 MAXIMUM THERMAL RATINGS Unit Rating Symbol Value Storage Junction Temperature Range TSTG -50 to 150 O C Operating Junction Temperature Range TJ -40 to 150 O Operating Ambient Temperature Range Ta -40 to 65 O C C Notes: PCB board mounted on minimum foot print. THERMAL CHARACTERISTICS Characteristic Symbol Value Thermal Resistance Junction to Leads TL on tab adjacent to plastic. Both leads soldered to identical pad sizes. RθJL Max. 20 Unit O C/W Notes: The junction to lead thermal resistance represents a minimum limiting value with both leads soldered to a large near-infinite heatsink. The junction to ambient thermal resistance depends strongly on board mounting conditions and typically is 3 to 6 times higher than the junction to lead resistance. The data shown is to be used as guideline values for preliminary engineering. ELECTRICAL CHARACTERISTICS (TC = 25°C UNLESS OTHERWISE NOTED) Parameters Test Conditions Symbol Min. Max. Unit Repetitive Peak Off-State Current VD = rated VDRM I DRM 5 µA Breakover Current f = 60 Hz, ISC = 1 Arms, Vac = 1 KVrms, RL = 1 KΩ , 1/2 AC cycle I BO 800 mA Holding Current1 10/1000µs waveform, ISC = 10A, VOC = 62 V, RL = 400 Ω IH On-State Voltage I T = 1 A, Tw = 300 µs, 1 pulse VT 150 mA 5 V Notes: Specific I H values are available by request. DATE : SEP.02.2002 PAGE . 5 +I I PPS I TSM IT I BO IH I BR _ I DRM +V V VT V DRM V BO V BR _I Characteristic Symbol Value VBO Breakover Voltage Maximum voltage across the device in or at breakdown measured under a specified voltage and current rate of rise I BO Breakover Current Instantaneous current flowing at the breakover voltage (VBO) IH Holding Current Minimum current required to maintain the device in the on-state IT On-state current Current through the device in the on-state condition V On-state voltage Voltage across the device in the on-state condition at a specified current (IT) VDRM Rated Repetitive Peak Off-State Voltage The highest instantaneous value of the off-state voltage, including all repetitive transient voltages but excluding all nonrepetitive transient voltages I DRM Repetitive Peak Off-State Current The maximum (peak) value of current that results from the application of VDRM I PPS Non-Repetitive Peak pulse current Rated maximum value of peak impulse current of specified amplitude and waveshape that may be applied without damage to the device under test di/dt Critical rate of rise of on-state current Rated value of the rate of rise of current that the device can withstand without damage. dv/dt Critical Rate of Rise of Off-State Voltage The maximum rate of rise of voltage (belowVDRM) that will not cause switching from the off-state to the on-state. T DATE : SEP.02.2002 PAGE . 6