CM300DC-24NFM Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Dual IGBT NFM-Series Module 300 Amperes/1200 Volts F A F X Y Y Y Z G G2 B E N W J K C2E1 AA L (4 PLACES) E2 C1 AB AA P D T Q Z E2 Z E1 H G G1 Z M (3 PLACES) V - TAB (4 PLACES) Description: Powerex NFM IGBT Modules are designed for use in hard switching (15-30kHz) applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management Q S C U R C1 G1 E1 C2E1 G2 E2 E2 Outline Drawing and Circuit Diagram Dim. Inches Dim. Inches Millimeters A 4.25 108.0 P 3.15 80.0 2.44 62.0 Q 0.11 3.0 R 0.91 23.2 Millimeters B C D 3.66±0.01 93.0±0.25 S 0.31 8.0 E 1.89±0.01 48.0±0.25 T 1.93 49.0 F 1.10 28.0 U 0.14 3.5 G 0.23 6.0 V H 0.67 17.0 W 1.18 30.0 J 0.79 20.0 X 0.62 18.5 K 0.39 10.0 Y 0.47 12.0 L 0.26 Dia. 6.5 Dia. Z 0.02 0.5 M M6 M6 AA 0.88 22.5 N 1.38 35.0 AB 0.98 25.0 02/07 1.19+0.04/-0.02 30.4+1.0/-0.5 #110 Tab Features: £ Low Drive Power £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ UPS £ Battery Powered Supplies £ Induction Heating Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DC-24NFM is a 1200V (VCES), 300 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 300 24 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DC-24NFM Dual IGBT NFM-Series Module 300 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM300DC-24NFM Units Tj –40 to 150 °C Junction Temperature Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 300 Amperes ICM 600* Amperes IE 300 Amperes Collector Current Peak Collector Current Emitter Current** Peak Emitter Current** IEM 600* Amperes Maximum Collector Dissipation*** (TC = 25°C)**** PC 1890 Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 375 Grams VISO 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage***** VCE(sat) IC = 300A, VGE = 15V, Tj = 25°C — 3.0 4.5 Volts IC = 300A, VGE = 15V, Tj = 125°C — 3.0 — Volts Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — 2.3 3.3 Volts Min. Typ. Max. Units 47 Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies — — Output Capacitance Coes — — VCE = 10V, VGE = 0V Reverse Transfer Capacitance Cres — — Inductive Turn-on Delay Time td(on) — — Load Rise Time Switch Turn-off Delay Time Time Fall Time nF 4.0 nF 0.9 nF 300 ns tr VCC = 600V, IC = 300A, — — 80 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω, — — 500 ns tf Inductive Load — 60 200 ns Diode Reverse Recovery Time** trr Switching Operation, — 110 180 ns Diode Reverse Recovery Charge** Qrr IE = 300A — 14 — µC *Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***Junction temperature (Tj) should not increase beyond 150°C. ****TC , Tf measured point is just under the chips. *****Pulse width and repetition rate should be such as to cause neglible temperature rise. 02/07 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DC-24NFM Dual IGBT NFM-Series Module 300 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Typ. Max. Units Rth(j-c)Q Per IGBT 1/2 Module, — — 0.066 °C/W — — 0.14 °C/W — 0.02 — °C/W 1.0 — 10 Ω Thermal Resistance, Junction to Case TC Measured Point Just Under Chips* Rth(j-c)D Per FWDi 1/2 Module, Contact Thermal Resistance, TC Measured Point Just Under Chips* Rth(c-f) Per 1/2 Module, Thermal Grease Applied Case to Fin External Gate Resistance RG *If using this value, Rth(f-a) should be measured just under the chips. 500 12 400 300 10 200 9 100 8 0 2 4 6 8 3 2 1 0 100 200 300 400 500 8 IC = 600A IC = 300A 6 IC = 120A 4 2 0 600 Tj = 25°C 6 8 10 12 14 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE, Cies, Coes, Cres, (nF) 101 Cies td(off) td(on) 101 Coes 100 Cres 102 tf tr 101 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load VGE = 0V 1 2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 02/07 3 20 103 102 102 0 18 COLLECTOR-CURRENT, IC, (AMPERES) VGE = 0V Tj = 25°C Tj = 125°C 100 16 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER CURRENT, IE, (AMPERES) 4 0 10 VGE = 15V Tj = 25°C Tj = 125°C SWITCHING TIME, (ns) 0 10 5 Tj = 25°C 15 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 CM300DC-24NFM Dual IGBT NFM-Series Module 300 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load 101 101 101 103 102 5 0 800 1200 1600 100 101 2000 102 103 REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load Eon Eoff 101 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 102 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load SWITCHING LOSS, Err, (mJ/PULSE) 102 10-3 400 0 101 REVERSE RECOVERY SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, Eon, Eoff, (mJ/PULSE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 10 SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 101 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) 10-3 VCC = 600V COLLECTOR CURRENT, IC, (AMPERES) 100 100 10-2 VCC = 400V 15 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive Load Eon Eoff GATE CHARGE, QG, (nC) 101 10-1 IC = 300A EMITTER CURRENT, IE, (AMPERES) 102 100 102 SWITCHING LOSS, E(on), E(off), (mJ/PULSE) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) Irr trr SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY TIME, trr, (ns) 103 103 VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive Load 101 100 100 101 102 GATE RESISTANCE, RG, (Ω) 101 10-1 Single Pulse TC = 25°C Under the Chip Per Unit Base = Rth(j-c) = 0.066°C/W (IGBT) Rth(j-c) = 0.14°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 02/07