SEMTECH uClamp3311PQ.TCT

uClamp3311PQ
Low Voltage µClamp®
for Automotive Applications
PROTECTION PRODUCTS - MicroClamp®
Description
Features
The µClamp 3311PQ transient voltage suppressor is
specifically designed to protect sensitive components
which are connected to low-voltage data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (cable discharge events), and
EFT (electrical fast transients). It is rated to Grade 3
of AEC-Q100 for use in automotive applications.
The µClamp®3311PQ is constructed using Semtech’s
proprietary EPD process technology. The EPD process
provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true
operating voltage of 3.3 volts for superior protection
when compared to traditional pn junction devices.
The µClamp3311PQ is in an 2-pin SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are
spaced at a pitch of 0.65mm and are finished with
lead-free NiPdAu. Each device will protect one line
operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays
are not practical. They may be used to meet the ESD
immunity requirements of IEC 61000-4-2. The combination of low voltage, small size and high ESD surge
capability makes them ideal for protection of sensitive
electronics in automotive applications.
®
‹ Transient protection for data lines to
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IEC 61000-4-2 (ESD) ±25kV (air), ±20kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Qualified to AEC-Q100, Grade 3
Protects one data line
Low clamping voltage
Working voltage: 3.3V
Low leakage current
Solid-state silicon-avalanche technology
Mechanical Characteristics
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SLP1006P2 package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.5 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code
Packaging : Tape and Reel
Applications
‹ Automotive Applications
‹ Low Voltage Data Lines
‹ 10/100 Ethernet
Dimensions
Schematic & PIN Configuration
1.0
0.60
0.65
0.50
Maximum Dimensions (mm)
Revision 7/282011
SLP1006P2 (Bottom View)
1
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uClamp3311PQ
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Symbol
Value
Units
Peak Pulse Power (tp = 8/20µs)
Pp k
90
Watts
Maximum Peak Pulse Current (tp = 8/20µs)
Ip p
5
Amps
VESD
+/- 25
+/- 20
kV
TJ
-40 to +85
°C
TSTG
-55 to +150
°C
ESD p er IEC 61000-4-2 (Air)
ESD p er IEC 61000-4-2 (Contact)
Op erating Temp erature
Storage Temp erature
Electrical Characteristics (T=25oC)
Parameter
Reverse Stand-Off Voltage
Symbol
Conditions
Minimum
Typical
VRWM
Maximum
Units
3.3
V
Punch-Through Voltage
V PT
IPT = 2µA, T=25°C
3.5
V
Punch-Through Voltage
V PT
IPT = 2µA, T=85°C
3.5
V
Snap-Back Voltage
VSB
ISB = 50mA
2.8
V
Reverse Leakage Current
IR
VRWM = 3.3V, T=25°C
0.05
0.5
µA
Reverse Leakage Current
IR
VRWM = 3.3V, T=85°C
0.1
1
µA
Clamping Voltage
VC
IPP = 1A, tp = 8/20µs
8
V
Clamping Voltage
VC
IPP = 5A, tp = 8/20µs
18
V
15
pF
Cj
I/O pin to Gnd
VR = 0V, f = 1MHz
12
Junction Capacitance
I/O pin to Gnd
VR = 3.3V, f = 1MHz
10
© 2011 Semtech Corp.
2
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uClamp3311PQ
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
110
10
100
% of Rated Power or I PP
Peak Pulse Power - PPP (kW)
90
1
0.1
80
70
60
50
40
30
20
10
0
0
0.01
0.1
1
10
100
25
50
1000
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Duration - tp (us)
Clamping Voltage vs. Peak Pulse Current
Normalized Capacitance vs. Reverse Voltage
1.3
15
O
Capacitance (normalized to V R=0)
Clamping Voltage - VC (V)
TA=25 C
8/20μs pulse
10
5
O
TA=25 C
f = 1 MHz
1.0
0.8
0.5
0.3
0.0
0
0.0
1.0
2.0
3.0
4.0
Peak Pulse Current - IPP (A)
5.0
0.0
6.0
2.0
3.0
4.0
Reverse Voltage - VR (V)
Reverse Leakage Current vs. Temperature
Insertion Loss S21
CH1 S21
150
Leakage Current (nA)
1.0
LOG
6 dB / REF 0 dB
1: -3.0120 dB
616.229 MHz
2: -3.8355 dB
900 MHz
0 dB
100
1
-6 dB
2
3
4
-12 dB
4: -8.1629 dB
2.5 GHz
-18 dB
50
3: -5.9804 dB
1.8 GHz
-24 dB
-30 dB
-36 dB
0
-75
-25
25
75
125
175
1
MHz
O
Temperature ( C)
START. 030 MHz
© 2011 Semtech Corp.
3
10
MHz
100
MHz
3
1
GHz GHz
STOP 3000. 000000 MHz
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uClamp3311PQ
PROTECTION PRODUCTS
Applications Information
Device Schematic & Pin Configuration
Device Connection Options
The µClamp3311PQ is designed to protect one data
line operating up to 3.3 volts. It will present a high
impedance to the protected line up to 3.3 volts. It will
“turn on” when the line voltage exceeds 3.5 volts. The
device is bidirectional and may be used on lines where
the signal polarity is above and below ground. These
devices are not recommended for use on dc power supply
lines due to their snap-back voltage characteristic.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. The structure of the EPD
TVS is vastly different from the traditional pn-junction
devices. At voltages below 5V, high leakage current
and junction capacitance render conventional avalanche technology impractical for most applications.
However, by utilizing the EPD technology, these devices
can effectively operate at 3.3V while maintaining
excellent electrical characteristics.
EPD TVS IV Characteristic Curve
I PP
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
I SB
I PT
VF
IR
VRWM
VSB VPT VC
IF
Circuit Board Layout Recommendations for Suppression of ESD.
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
z Place the TVS near the input terminals or connectors to restrict transient coupling.
z Minimize the path length between the TVS and the
protected line.
z Minimize all conductive loops including power and
ground loops.
z The ESD transient return path to ground should be
kept as short as possible.
z Never run critical signals near board edges.
z Use ground planes whenever possible.
© 2011 Semtech Corp.
4
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uClamp3311PQ
PROTECTION PRODUCTS
Outline Drawing - SLP1006P2
A
B
D
DIMENSIONS
INCHES
MILLIMETERS
DIM
MIN NOM MAX MIN NOM MAX
E
TOP VIEW
A
SEATING
PLANE
aaa C
C
A1
A
A1
b
D
E
e
L
R
N
aaa
bbb
.016 .020 .022
.000 .001 .002
.018 .020 .022
.035 .039 .043
.020 .024 .028
.026 BSC
.008 .010 .012
.002 .004 .006
2
.003
.004
0.40 0.50 0.55
0.00 0.03 0.05
0.45 0.50 0.55
0.90 1.00 1.10
0.50 0.60 0.70
0.65 BSC
0.20 0.25 0.30
0.05 0.10 0.15
2
0.08
0.10
PIN 1 ID
R
bxN
bbb
C A B
2x L
e
BOTTOM VIEW
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
Land Pattern - SLP1006P2
DIMENSIONS
Y
(C)
DIM
C
G
X
Y
Z
Z
G
X
INCHES
(.033)
.012
.024
.022
.055
MILLIMETERS
(0.85)
0.30
0.60
0.55
1.40
NOTES:
1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.
CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR
COMPANY'S MANUFACTURING GUIDELINES ARE MET.
© 2011 Semtech Corp.
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uClamp3311PQ
PROTECTION PRODUCTS
Marking Code
Ordering Information
X
Part Number
Qty per
Reel
Reel
Size
uClamp 3311PQ.TCT
3,000
7 Inch
MicroClamp, uClamp and µClamp are trademarks of Semtech
Corporation
Notes:
1) Device is electrically symmetrical
Tape and Reel Specification
A0
0.69 +/-0.10 mm
B0
K0
1.19 +/-0.10 mm
0.66 +/-0.10 mm
Tape
Width
B, (Max)
D
D1
8 mm
4.2 mm
(.165)
1.5 + 0.1 mm
- 0.0 mm
(0.59 +.005
- .000)
0.4 mm
±0.25
(.031)
E
1.750±.10
mm
(.069±.004)
F
P
P0
P2
T
W
3.5±0.05
mm
(.138±.002)
4.0±0.10
mm
(.157±.004)
4.0±0.1
mm
(.157±.004)
2.0±0.05
mm
(.079±.002)
0.254±0.02
mm (.016)
8.0 mm
+ 0.3 mm
- 0.1 mm
(.312±.012)
Contact Information
Semtech Corporation
Protection Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
© 2011 Semtech Corp.
6
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