uClamp3311PQ Low Voltage µClamp® for Automotive Applications PROTECTION PRODUCTS - MicroClamp® Description Features The µClamp 3311PQ transient voltage suppressor is specifically designed to protect sensitive components which are connected to low-voltage data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (cable discharge events), and EFT (electrical fast transients). It is rated to Grade 3 of AEC-Q100 for use in automotive applications. The µClamp®3311PQ is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The µClamp3311PQ is in an 2-pin SLP1006P2 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 3.3 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000-4-2. The combination of low voltage, small size and high ESD surge capability makes them ideal for protection of sensitive electronics in automotive applications. ® Transient protection for data lines to IEC 61000-4-2 (ESD) ±25kV (air), ±20kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Cable Discharge Event (CDE) Qualified to AEC-Q100, Grade 3 Protects one data line Low clamping voltage Working voltage: 3.3V Low leakage current Solid-state silicon-avalanche technology Mechanical Characteristics SLP1006P2 package Pb-Free, Halogen Free, RoHS/WEEE Compliant Nominal Dimensions: 1.0 x 0.6 x 0.5 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94V-0 Marking : Marking code Packaging : Tape and Reel Applications Automotive Applications Low Voltage Data Lines 10/100 Ethernet Dimensions Schematic & PIN Configuration 1.0 0.60 0.65 0.50 Maximum Dimensions (mm) Revision 7/282011 SLP1006P2 (Bottom View) 1 www.semtech.com uClamp3311PQ PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20µs) Pp k 90 Watts Maximum Peak Pulse Current (tp = 8/20µs) Ip p 5 Amps VESD +/- 25 +/- 20 kV TJ -40 to +85 °C TSTG -55 to +150 °C ESD p er IEC 61000-4-2 (Air) ESD p er IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbol Conditions Minimum Typical VRWM Maximum Units 3.3 V Punch-Through Voltage V PT IPT = 2µA, T=25°C 3.5 V Punch-Through Voltage V PT IPT = 2µA, T=85°C 3.5 V Snap-Back Voltage VSB ISB = 50mA 2.8 V Reverse Leakage Current IR VRWM = 3.3V, T=25°C 0.05 0.5 µA Reverse Leakage Current IR VRWM = 3.3V, T=85°C 0.1 1 µA Clamping Voltage VC IPP = 1A, tp = 8/20µs 8 V Clamping Voltage VC IPP = 5A, tp = 8/20µs 18 V 15 pF Cj I/O pin to Gnd VR = 0V, f = 1MHz 12 Junction Capacitance I/O pin to Gnd VR = 3.3V, f = 1MHz 10 © 2011 Semtech Corp. 2 pF www.semtech.com uClamp3311PQ PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 10 100 % of Rated Power or I PP Peak Pulse Power - PPP (kW) 90 1 0.1 80 70 60 50 40 30 20 10 0 0 0.01 0.1 1 10 100 25 50 1000 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (us) Clamping Voltage vs. Peak Pulse Current Normalized Capacitance vs. Reverse Voltage 1.3 15 O Capacitance (normalized to V R=0) Clamping Voltage - VC (V) TA=25 C 8/20μs pulse 10 5 O TA=25 C f = 1 MHz 1.0 0.8 0.5 0.3 0.0 0 0.0 1.0 2.0 3.0 4.0 Peak Pulse Current - IPP (A) 5.0 0.0 6.0 2.0 3.0 4.0 Reverse Voltage - VR (V) Reverse Leakage Current vs. Temperature Insertion Loss S21 CH1 S21 150 Leakage Current (nA) 1.0 LOG 6 dB / REF 0 dB 1: -3.0120 dB 616.229 MHz 2: -3.8355 dB 900 MHz 0 dB 100 1 -6 dB 2 3 4 -12 dB 4: -8.1629 dB 2.5 GHz -18 dB 50 3: -5.9804 dB 1.8 GHz -24 dB -30 dB -36 dB 0 -75 -25 25 75 125 175 1 MHz O Temperature ( C) START. 030 MHz © 2011 Semtech Corp. 3 10 MHz 100 MHz 3 1 GHz GHz STOP 3000. 000000 MHz www.semtech.com uClamp3311PQ PROTECTION PRODUCTS Applications Information Device Schematic & Pin Configuration Device Connection Options The µClamp3311PQ is designed to protect one data line operating up to 3.3 volts. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is bidirectional and may be used on lines where the signal polarity is above and below ground. These devices are not recommended for use on dc power supply lines due to their snap-back voltage characteristic. EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 3.3V while maintaining excellent electrical characteristics. EPD TVS IV Characteristic Curve I PP The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. I SB I PT VF IR VRWM VSB VPT VC IF Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z Place the TVS near the input terminals or connectors to restrict transient coupling. z Minimize the path length between the TVS and the protected line. z Minimize all conductive loops including power and ground loops. z The ESD transient return path to ground should be kept as short as possible. z Never run critical signals near board edges. z Use ground planes whenever possible. © 2011 Semtech Corp. 4 www.semtech.com uClamp3311PQ PROTECTION PRODUCTS Outline Drawing - SLP1006P2 A B D DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX E TOP VIEW A SEATING PLANE aaa C C A1 A A1 b D E e L R N aaa bbb .016 .020 .022 .000 .001 .002 .018 .020 .022 .035 .039 .043 .020 .024 .028 .026 BSC .008 .010 .012 .002 .004 .006 2 .003 .004 0.40 0.50 0.55 0.00 0.03 0.05 0.45 0.50 0.55 0.90 1.00 1.10 0.50 0.60 0.70 0.65 BSC 0.20 0.25 0.30 0.05 0.10 0.15 2 0.08 0.10 PIN 1 ID R bxN bbb C A B 2x L e BOTTOM VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLP1006P2 DIMENSIONS Y (C) DIM C G X Y Z Z G X INCHES (.033) .012 .024 .022 .055 MILLIMETERS (0.85) 0.30 0.60 0.55 1.40 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. © 2011 Semtech Corp. 5 www.semtech.com uClamp3311PQ PROTECTION PRODUCTS Marking Code Ordering Information X Part Number Qty per Reel Reel Size uClamp 3311PQ.TCT 3,000 7 Inch MicroClamp, uClamp and µClamp are trademarks of Semtech Corporation Notes: 1) Device is electrically symmetrical Tape and Reel Specification A0 0.69 +/-0.10 mm B0 K0 1.19 +/-0.10 mm 0.66 +/-0.10 mm Tape Width B, (Max) D D1 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) 0.4 mm ±0.25 (.031) E 1.750±.10 mm (.069±.004) F P P0 P2 T W 3.5±0.05 mm (.138±.002) 4.0±0.10 mm (.157±.004) 4.0±0.1 mm (.157±.004) 2.0±0.05 mm (.079±.002) 0.254±0.02 mm (.016) 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 © 2011 Semtech Corp. 6 www.semtech.com