STMICROELECTRONICS STB50N25M5

STB50N25M5
N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET
in D²PAK package
Datasheet — production data
Features
Type
VDSS
RDS(on)
max
ID
STB50N25M5
250 V
< 0.075 Ω
28 A
■
Amongst the best RDS(on)* area
■
High dv/dt capability
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
TAB
3
1
D²PAK
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$OR4!"
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STB50N25M5
50N25M5
D²PAK
Tape and reel
March 2012
This is information on a product in full production.
Doc ID 15923 Rev 3
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www.st.com
14
Contents
STB50N25M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
......................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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.............................................. 8
Doc ID 15923 Rev 3
STB50N25M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Gate- source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
28
A
ID
Drain current (continuous) at TC = 100 °C
18
A
IDM (1)
Drain current (pulsed)
112
A
PTOT
Total dissipation at TC = 25 °C
110
W
9
A
VGS
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
350
mJ
Peak diode recovery voltage slope
15
V/ns
-55 to 150
°C
Value
Unit
dv/dt(2)
TJ
Tstg
Operating junction temperature
Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤ 28 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
0.31
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
30
°C/W
Doc ID 15923 Rev 3
3/14
Electrical characteristics
2
STB50N25M5
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
250
V
IDSS
Zero gate voltage
VDS = 250 V
drain current (VGS = 0) VDS = 250 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±100
nA
4
5
V
0.065
0.075
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
RDS(on)
Static drain-source onVGS = 10 V, ID = 14 A
resistance
Table 5.
Symbol
3
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
1700
100
15
-
pF
pF
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
89
-
pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 80%
V(BR)DSS
-
171
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
1.8
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 200 V, ID = 28 A,
VGS = 10 V
(see Figure 15)
-
44
10
23
-
nC
nC
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/14
Doc ID 15923 Rev 3
STB50N25M5
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISD
ISDM
(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 125 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14)
Min.
Typ.
-
16
44
35
20
Max Unit
-
ns
ns
ns
ns
Max
Unit
-
28
112
A
A
1.6
V
Source drain diode
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Min. Typ.
Forward on voltage
ISD = 28 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V, TJ = 25 °C
(see Figure 16)
-
174
1.5
18
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 16)
-
195
2
20
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15923 Rev 3
5/14
Electrical characteristics
STB50N25M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
AM03968v1
ID
(A)
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
100
10
10µs
100µs
1ms
Tj=150°C
Tc=25°C
1
Sinlge
pulse
0.1
0.1
Figure 4.
ID
(A)
10ms
10
1
100
VDS(V)
Output characteristics
AM03969v1
VGS=10V
50
AM03970v1
ID
(A)
50
40
VDS=20V
40
7V
30
30
6V
20
20
10
10
5V
0
0
Figure 6.
5
10
15
20
25
30
Normalized BVDSS vs temperature
AM10399v1
VDS
0
0
VDS(V)
(norm)
Figure 7.
2
4
6
8
10 VGS(V)
Static drain-source on-resistance
AM03972v1
RDS(on)
(Ω)
1.08
ID = 1mA
VGS=10V
1.06
0.070
1.04
1.02
0.065
1.00
0.98
0.060
0.96
0.94
0.92
-50 -25
6/14
0
25
50
75 100
TJ(°C)
0.055
0
Doc ID 15923 Rev 3
5
10
15
20
25
ID(A)
STB50N25M5
Figure 8.
Electrical characteristics
Output capacitance stored energy
AM04951v1
Eoss
(µJ)
Figure 9.
Capacitance variations
AM03973v1
C
(pF)
2.5
Ciss
1000
2.0
100
1.5
Coss
1.0
Crss
10
0.5
0
0
100
50
150
200
250
1
0.1
VDS(V)
1
10
100
VDS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance vs
temperature
AM03974v1
VGS
(V)
VGS
VDD=200V
12
AM03976v1
RDS(on)
(norm)
2.1
ID=28A
ID=14A
VGS=10V
VDS
10
1.7
8
1.3
6
4
0.9
2
0
0
Figure 12.
20
10
30
40
50 Qg(nC)
0.5
-50 -25
0
25
50
75 100
TJ(°C)
Normalized gate threshold voltage Figure 13. Source-drain diode forward
vs temperature
characteristics
AM03975v1
VGS(th)
(norm)
1.10
ID=100µA
AM03978v1
VSD
(V)
TJ=-50°C
1.2
1.0
1.00
0.8
0.90
TJ=25°C
0.6
TJ=150°C
0.4
0.80
0.2
0.70
-50 -25
0
0
25
50
75 100
TJ(°C)
Doc ID 15923 Rev 3
0
10
20
30
40
50
ISD(A)
7/14
Test circuits
3
STB50N25M5
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 16. Test circuit for inductive load
Figure 17. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 18. Unclamped inductive waveform
AM01471v1
Figure 19. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
Doc ID 15923 Rev 3
10%
AM01473v1
STB50N25M5
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
Doc ID 15923 Rev 3
9/14
Package mechanical data
STB50N25M5
Figure 20. D²PAK (TO-263) drawing
0079457_T
Figure 21. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimensions are in millimeters
10/14
Doc ID 15923 Rev 3
Footprint
STB50N25M5
5
Packaging mechanical data
Packaging mechanical data
Table 9.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 15923 Rev 3
Min.
Max.
330
13.2
26.4
30.4
11/14
Packaging mechanical data
STB50N25M5
Figure 22. Tape for D²PAK (TO-263)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 23. Reel for D²PAK (TO-263)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
12/14
Doc ID 15923 Rev 3
STB50N25M5
6
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
Changes
23-Jun-2009
1
First release
15-Mar-2012
2
Section 4: Package mechanical data has been updated.
Minor text changes.
28-Mar-2012
3
Figure 7: Static drain-source on-resistance has been updated.
Doc ID 15923 Rev 3
13/14
STB50N25M5
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