STW60N65M5 STFW60N65M5 N-channel 650 V, 0.049 Ω, 46 A MDmesh™ V Power MOSFET in TO-247, TO-3PF Features ■ Order codes VDSS @ TJmax RDS(on) max ID STFW60N65M5 STW60N65M5 710 V < 0.059 Ω 46 A 1 Worldwide best RDS(on) * area amongst the silicon based devices 2 2 1 1 TO-247 ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Figure 1. Application 3 3 TO-3PF Internal schematic diagram Switching applications $ Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes Marking Package Packaging STFW60N65M5 STW60N65M5 60N65M5 TO-3PF TO-247 Tube May 2011 Doc ID 18222 Rev 2 1/16 www.st.com 16 Contents STFW60N65M5, STW60N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-247 VGS Gate-source voltage TO-3PF ± 25 V ID Drain current (continuous) at TC = 25 °C 46 A ID Drain current (continuous) at TC = 100 °C 29 A Drain current (pulsed) 184 A IDM (1) PTOT Total dissipation at TC = 25 °C 255 79 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1400 mJ 15 V/ns dv/dt (2) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc=25°C) Tstg Storage temperature Tj 3500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 46 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF 0.49 1.58 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Doc ID 18222 Rev 2 °C/W 3/16 Electrical characteristics 2 STFW60N65M5, STW60N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.049 0.059 Ω Min. Typ. Max. Unit - 6810 141 6.2 - pF pF pF - 480 - pF - 140 - pF - 1 - Ω - 139 34 52 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 23 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 23 A, VGS = 10 V (see Figure 17) 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Table 6. Symbol td (v) tr (v) tf (i) tc(off) Table 7. Electrical characteristics Switching times Parameter Test conditions VDD = 400 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) (see Figure 21) Voltage delay time Voltage rise time Current fall time Crossing time Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 90 11 13 16 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 46 184 A A ISD = 46 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 46 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) - 448 10 45 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 46 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) - 534 14 52 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 18222 Rev 2 5/16 Electrical characteristics STFW60N65M5, STW60N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-3FP Figure 3. Thermal impedance for TO-3FP AM09126v1 ID (A) TO3PF K Tj=150°C δ=0.5 Tc=25°C Single pulse 100 0.2 a e ar is (o is DS th in ax R ion m at by r e d Op mite Li 10 n) 10µs 100µs 0.1 -1 10 0.05 1ms 10ms 0.02 0.01 1 Single pulse -2 0.1 0.1 Figure 4. 10 1 100 10 -5 10 VDS(V) Safe operating area for TO-247 -4 -2 -3 10 10 10 -1 tp (s) 10 Figure 5. Thermal impedance for TO-247 Figure 7. Transfer characteristics AM09127v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 10µs a e ar is ) n (o S is th RD x in n ma tio by a r pe ed O mit Li 10 100µs 1ms 10ms 1 0.1 0.1 Figure 6. 10 1 100 VDS(V) Output characteristics AM09128v1 ID (A) 140 VGS=10V 7.5V 7V 120 AM09129v1 ID (A) 140 VDS=20V 120 100 6.5V 100 80 80 60 60 6V 40 20 40 20 5.5V 0 0 6/16 2 4 6 8 0 10 12 14 16 18 VDS(V) Doc ID 18222 Rev 2 3 4 5 6 7 8 9 VGS(V) STFW60N65M5, STW60N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09130v1 VGS (V) VDS 12 VDD=520V ID=23A 500 Static drain-source on resistance AM09131v1 RDS(on) (Ω) VGS=10V 0.057 0.055 10 400 0.053 8 300 6 0.051 0.049 200 4 0.047 100 2 0 100 50 0 150 0 Qg(nC) Figure 10. Capacitance variations 0.043 0 20 10 30 40 ID(A) Figure 11. Output capacitance stored energy AM09132v1 C (pF) 0.045 AM09133v1 Eoss (µJ) 25 10000 Ciss 20 1000 15 Coss 100 10 10 Crss 1 0.1 1 10 100 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs temperature AM09134v1 VGS(th) 5 (norm) 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on resistance vs temperature AM09135v1 RDS(on) (norm) ID=250µA 1.10 2.1 ID=23A 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 125 TJ(°C) 0.5 -50 -25 Doc ID 18222 Rev 2 0 25 50 75 100 125 TJ(°C) 7/16 Electrical characteristics STFW60N65M5, STW60N65M5 Figure 14. Normalized BVDSS vs temperature AM09136v1 Figure 15. Switching losses vs gate resistance (1) 1.07 E (μJ) 800 1.05 700 BVDSS (norm) ID=1mA AM09137v1 Eon ID=30A VDD=400V VGS=10V 600 1.03 Eoff 500 1.01 400 0.99 300 0.97 200 0.95 0.93 -50 -25 100 0 25 50 75 100 125 TJ(°C) 1. Eon including reverse recovery of a SiC diode 8/16 Doc ID 18222 Rev 2 0 0 10 20 30 40 RG(Ω) STFW60N65M5, STW60N65M5 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 20. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 21. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 18222 Rev 2 Tfall Tcross --over AM05540v2 9/16 Package mechanical data 4 STFW60N65M5, STW60N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Table 8. Package mechanical data TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 Doc ID 18222 Rev 2 10.20 11/16 Package mechanical data STFW60N65M5, STW60N65M5 Figure 22. TO-3PF drawing L3 L D E A C D1 Dia L2 L6 L7 F2(3x) F(3x) G1 H G R L5 N L4 7627132_C 12/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 Table 9. Package mechanical data TO-247 mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.50 Doc ID 18222 Rev 2 13/16 Package mechanical data STFW60N65M5, STW60N65M5 Figure 23. TO-247 drawing 0075325_F 14/16 Doc ID 18222 Rev 2 STFW60N65M5, STW60N65M5 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 15-Nov-2010 1 First release. 05-May-2011 2 Document status promoted from preliminary data to datasheet. Doc ID 18222 Rev 2 15/16 STFW60N65M5, STW60N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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