Datasheet - STMicroelectronics

STD8NF25
N-channel 250 V, 318 mΩ, 8 A STripFET™ II Power MOSFET
in DPAK package
Datasheet — production data
Features
Order code
VDSS
RDS(on)
max.
ID
STD8NF25
250 V
< 420 mΩ
8A
TAB
■
100% avalanche tested
■
175 °C junction temperature
3
1
Applications
■
DPAK
Switching applications
– Automotive
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1.
Internal schematic diagram
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3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STD8NF25
8NF25
DPAK
Tape and reel
April 2012
This is information on a product in full production.
Doc ID 018593 Rev 1
1/14
www.st.com
14
Contents
STD8NF25
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
.............................................. 8
Doc ID 018593 Rev 1
STD8NF25
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
250
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at TC = 25 °C
8
A
Drain current (continuous) at TC=100 °C
6
A
Drain current (pulsed)
32
A
PTOT
Total dissipation at TC = 25 °C
72
W
TJ
Operating junction temperature
Storage temperature
-55 to 175
°C
Value
Unit
ID(1)
IDM
(2)
Tstg
1. The value is rated according to Rthj-c.
2. Pulse is rated according to SOA.
Table 3.
Thermal data
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
Thermal resistance junction-case
2.08
Thermal resistance junction-pcb
50
°C/W
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 4.
Symbol
Avalanche data
Parameter
IAV
Non-repetitive avalanche current
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAV, VDD=50 V)
Doc ID 018593 Rev 1
Value
Unit
8
A
110
mJ
3/14
Electrical characteristics
2
STD8NF25
Electrical characteristics
(TCASE=25 °C unless otherwise specified).
Table 5.
Symbol
Parameter
Test conditions
Min.
Typ.
250
-
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 250 V
VDS = 250 V, Tc=125 °C
-
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
-
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
-
4
V
RDS(on)
Static drain-source
on-resistance
VGS= 10 V, ID= 8 A
318
420
mΩ
V(BR)DSS
Table 6.
Symbol
2
V
Dynamic
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
-
500
90
15
-
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 200 V, ID = 8 A
VGS =10 V
(see Figure 14)
-
16
3.5
8
-
nC
nC
nC
Min.
Typ.
Max.
Unit
-
13
10
26
6
-
ns
ns
-
ns
ns
Table 7.
Symbol
4/14
On/off states
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=125 V, ID=4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 13 and
Figure 18)
Doc ID 018593 Rev 1
-
STD8NF25
Electrical characteristics
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISDM
Source-drain current
Source-drain current
(pulsed)
VSD
Forward on voltage
ISD=8 A, VGS=0 V
trr
Qrr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs,
VDD = 50 V
(see Figure 15)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs,
VDD = 50 V, TJ= 150 °C
(see Figure 15)
ISD
IRRM
trr
Qrr
IRRM
Doc ID 018593 Rev 1
Min.
Typ.
Max.
Unit
-
8
32
A
A
-
1.5
V
-
115
470
8.5
ns
nC
A
-
130
580
9.5
ns
nC
A
5/14
Electrical characteristics
STD8NF25
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
ID
(A)
AM11280v1
10
10µs
Figure 3.
Thermal impedance
Figure 5.
Transfer characteristics
on
a
DS
(
Op
Lim era
ite tion
d
by in th
m is
ax ar
R e
)
is
Tj=175°C
Tc=25°C
Single pulse
1
100µs
1ms
10ms
0.1
0.1
Figure 4.
10
1
VDS(V)
100
Output characteristics
AM11281v1
ID
(A)
VGS=10V
AM11282v1
ID
(A)
VDS=25V
20
20
6V
15
15
10
10
5
5
4V
0
0
Figure 6.
5
10
15
20
25
VDS(V)
Normalized BVDSS vs temperature
AM11283v1
BVDSS
(norm)
ID=1mA
1.2
0
0
Figure 7.
2
4
8
6
VGS(V)
10
Static drain-source on-resistance
AM11284v1
RDS(on)
(Ω)
VGS=10V
0.35
1.0
0.30
0.8
0.25
0.6
0.20
0.4
0.15
0.2
0
-100
6/14
-50
0.10
0
50
100
150
TJ(°C)
Doc ID 018593 Rev 1
0
1
2
3
4
5
6
7
8
ID(A)
STD8NF25
Figure 8.
Electrical characteristics
Gate charge vs gate-source voltage Figure 9.
VGS
(V)
AM11285v1
VDS
VDD=200V
ID=8A
12
(V)
VDS
200
10
Capacitance variations
AM11286v1
C
(pF)
1000
Ciss
150
8
100
6
Coss
100
4
10
Crss
50
2
0
0
8
4
16
12
Figure 10. Normalized gate threshold voltage
vs temperature
AM11287v1
VGS(th)
(norm)
1
0.1
0
Qg(nC)
1
10
VDS(V)
Figure 11. Normalized on resistance vs
temperature
AM11288v1
RDS(on)
(norm)
ID=250µA
100
ID=8A
VGS=10V
2.5
1.0
2.0
0.8
1.5
1.0
0.6
0.5
0.4
-100
-50
0
50
100
TJ(°C)
150
0
-100
-50
0
50
100
150
TJ(°C)
Figure 12. Source-drain diode forward
characteristics
AM11289v1
VSD
(V)
TJ=25°C
0.9
TJ=-50°C
0.8
0.7
TJ=175°C
0.6
0.5
0.4
0
2
4
6
8
ISD(A)
Doc ID 018593 Rev 1
7/14
Test circuits
3
STD8NF25
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 17. Unclamped inductive waveform
AM01471v1
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/14
0
Doc ID 018593 Rev 1
10%
AM01473v1
STD8NF25
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
R
V2
1
0.20
0°
8°
Doc ID 018593 Rev 1
9/14
Package mechanical data
STD8NF25
Figure 19. DPAK (TO-252) drawing
0068772_H
Figure 20. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
a. All dimensions are in millimeters.
10/14
Doc ID 018593 Rev 1
AM08850v1
STD8NF25
5
Packaging mechanical data
Packaging mechanical data
Table 10.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 018593 Rev 1
18.4
22.4
11/14
Packaging mechanical data
STD8NF25
Figure 21. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B1
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 22. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
12/14
Doc ID 018593 Rev 1
STD8NF25
6
Revision history
Revision history
Table 11.
Document revision history
Date
Revision
26-Apr-2012
1
Changes
First release.
Doc ID 018593 Rev 1
13/14
STD8NF25
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