STMICROELECTRONICS STPS1045HR

STPS1045HR
Aerospace 2 x 10 A - 45 V Schottky rectifier
Features
■
Forward current: 2 x 10 A
■
Repetitive peak voltage: 45 V
■
Low forward voltage drop: 0.75 V
■
Maximum junction temperature: 175 °C
■
Negligible switching losses
■
Low capacitance
■
High reverse avalanche surge capability
■
Hermetic package
■
Target radiation qualification:
– 150 krad (Si) low dose rate
– 1 Mrad high dose rate
■
ESCC qualified
SMD.5
Description
This power Schottky rectifier is designed and
packaged to comply with the ESCC5000
specification for aerospace products. Housed in a
hermetically sealed surface mount package, it is
ideal for use in applications for aerospace and
other harsh environments.
The STPS1045HR is intended for use in medium
voltage applications and in high frequency circuits
where low switching losses and low noise are
required.
Table 1.
Device summary
Order code
STPS1045CS1
STPS1045CSHRB
June 2010
ESCC detailed
specification
Quality level
-
Engineering
model
5106/017/02
Configuration
Package
Lead
finish
Double die
common cathode
SMD.5
Gold
ESCC flight
Doc ID 17640 Rev 1
EPPL
-
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8
Characteristics
1
STPS1045HR
Characteristics
Table 2.
Absolute maximum ratings
Symbol
IFSM
VRRM
IRRM
IO
IF(RMS)
TOP
TJ
TSTG
Characteristic
Forward surge current (per diode)(1)
Value
Unit
200
A
(2)
45
V
(3)
1
A
Average output rectified current (50% duty cycle):(4)
per diode
per device
10
20
A
Forward rms current (per diode)
15
A
-65 to +175
°C
+175
°C
-65 to +175
°C
+245
°C
10000
V/µs
Repetitive peak reverse voltage
Repetitive peak reverse current
Operating temperature range
(case temperature)
Junction temperature
Storage temperature range
temperature(5)
TSOL
Soldering
dV/dt
Critical rate of rise of reverse voltage
1. Sinusoidal pulse of 10 ms duration
2. Pulsed, duration 5 ms, F = 50 Hz
3. Pulsed, duration 2 µs, F = 1 kHz
4. For Tcase > +140 °C, derate linearly to 0 A at +175 °C.
5. Duration 5 seconds maximum and the same package shall not be resoldered until 3 minutes have elapsed.
Table 3.
Symbol
Rth(j-c)(1)
Thermal resistance
Characteristic
Thermal resistance, junction to case
per diode
per device(2)
1. Package mounted on infinite heatsink
2. The per device ratings apply only when both anode terminals are tied togther.
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Value
Unit
1.65
0.85
°C/W
STPS1045HR
Table 4.
Symbol
IR
VF1
Characteristics
s
Electrical measurements at ambiant temperature (per diode), Tamb = 22 ±3 °C
Characteristic
Reverse Current
MIL-STD-750
test method
4016
(1)
VF2(1)
VF3
Forward Voltage
4011
(1)
C
Zth(j-c)(2)
Values
Test conditions
Units
Min.
Max.
DC method, VR = 45V
-
100
µA
Pulse method, IF = 3 A
-
620
mV
Pulse method, IF = 20 A
-
750
mV
880
mV
500
pF
Pulse method, IF = 20 A
Capacitance
4001
VR = 5 V, F = 1 MHz
Relative thermal impedance,
junction to case
3101
IH = 15 to 40 A, tH = 50 ms
IM = 50 mA, tmd = 100 µs
-
Calculate ΔVF(3)
°C/W
1. Pulse width ≤ 300 µs, Duty Cycle ≤ 2%
2. Performed only during screening tests parameter drift values (initial measurements), go-no-go
3. The limits for ΔVF shall be defined by the manufacturer on every lot in accordance with MIL-STD-750 Method 3101 and
shall guarantee the Rth(j-c) limits specified in maximum ratings.
Table 5.
Symbol
IR
Electrical measurements at high and low temperatures (per diode)
Characteristic
Reverse Current
MIL-STD-750
test method
4016
VF1(2)
VF2
(2)
VF3(2)
Forward Voltage
4011
Values
Test conditions(1)
Units
Min.
Max.
Tcase = +125 (+0, -5) °C
DC method, VR = 45 V
-
15
mA
Tcase = +125 (+0, -5) °C
pulse method, IF = 3 A
-
570
mV
Tcase = +125 (+0, -5) °C
pulse method, IF = 10 A
-
700
mV
Tcase = -55 (+0, -5) °C
pulse method, IF = 10 A
-
850
mV
Tcase = +125 (+0, -5) °C
pulse method, IF = 20 A
-
800
mV
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures allowed. Alternatively a
100% inspection may be performed.
2. Performed only during screening tests parameter drift values (initial measurements for HTRB), go-no-go.
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Configuration
2
STPS1045HR
Configuration
Figure 1.
Available device configuration
STPS1045CS
STPS1045CSHRB
1
Terminal 1: Anode a
Terminal 2: Common cathode
Terminal 3: Anode b
2
3
The lid is not connected to any terminal
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STPS1045HR
3
Package Information
Package Information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 2.
Surface mount package (SMD.5), 3-terminal dimension definitions
A
e
A1
b2
b3
1
2
E
D1
D
b1
3
b
Table 6.
Surface mount package (SMD.5), 3-terminal dimension values
Dimension in millimetres
Dimlension in inches
Reference
Min.
Max.
Min.
Max.
A
2.84
3.15
0.112
0.124
A1
0.25
0.51
0.010
0.20
b
7.13
7.39
0.281
0.291
b1
5.58
5.84
0.220
0.230
b2(1)
2.28
2.54
0.090
0.100
(1)
2.92
3.18
0.115
0.125
D
10.03
10.28
0.395
0.405
D1(1)
0.76
-
0.030
-
E
7.39
7.64
0.291
0.301
b3
(1)
e
1.91 BSC
0.075
1. 2 locations
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Ordering Information
STPS1045HR
4
Ordering Information
Table 7.
Ordering information
Order code
STPS1045CS1
ESCC detailed
Package
specification
-
Lead finish
Marking
EPPL
Gold
STPS1045CS1
-
SMD.5
STPS1045CSHRB
6/8
5106/017/02
Gold
Doc ID 17640 Rev 1
510601702
-
Mass
(g)
Packing
2.0
Strip
pack
STPS1045HR
5
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
16-June-2010
1
Changes
Initial release.
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STPS1045HR
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