STPS2045CH Power Schottky rectifier Datasheet − production data Features A1 ■ Very small conduction losses K A2 ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation Description This device is a dual diode Schottky rectifier, suited to high frequency switch mode power supply. K A2 A1 Packaged in IPAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Table 1. Electrical characteristics(a) Figure 1. IPAK STPS2045CH Device summary Symbol Value IF(AV) 2 x 10 A VRRM 45 V Tj (max) 175 °C VF (max) 0.57 V I V "Forwar d" I 2 x IO X IF VRRM VR VAR IO X V IR VTo VF(Io ) VF VF(2xI o ) "Re ver se" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 8. VAR and IAR are pulse measurements (tp < 10 µs). VR, IR, VRRM and VF, are static characteristics June 2012 This is information on a product in full production. Doc ID 023045 Rev 1 1/7 www.st.com 7 Characteristics STPS2045CH 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms voltage 20 A IF(AV) Average forward current δ = 0.5 IFSM Tc = 155 °C Per diode 10 Tc = 150 °C Per package 20 A Surge non repetitive forward current tp = 10 ms sine-wave 150 A (1) Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 280 W (2) Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V VASM(2) Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V -65 to + 175 °C + 175 °C PARM VARM Tstg Tj Storage temperature range (3) Maximum operating junction temperature 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 8 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj 3. Table 3. Thermal resistance parameters Symbol Parameter Rth (j-c) Junction to case Rth (c) Coupling Per diode Total Value Unit 2.50 1.6 °C/W 0.7 °C/W When the diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 4. Symbol IR (1) Static electrical characteristics (per diode) Parameter Reverse leakage current Tests conditions Tj = 25 °C Tj = 125 °C Tj = 125 °C VF (2) Forward voltage drop Tj = 25 °C Tj = 125 °C Min. VR = VRRM IF = 10 A Max. Unit 100 µA 7 15 mA 0.5 0.57 0.84 IF = 20 A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.015 IF2(RMS) 2/7 Typ. Doc ID 023045 Rev 1 0.65 0.72 V STPS2045CH Figure 2. Characteristics Average forward power dissipation Figure 3. versus average forward current (per diode) Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) PF(AV)(W) 9 δ = 0.1 δ = 0.05 8 δ = 0.2 δ = 0.5 1000 δ=1 F=1MHz VOSC=30mVRMS Tj=25°C 7 500 6 5 4 3 200 2 T 1 δ = tp/T IF(AV)(A) VR(V) tp 100 0 0 2 4 Figure 4. 6 8 10 12 14 Normalized avalanche power derating versus pulse duration 1 2 Figure 5. 5 10 20 50 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) PARM (tp) PARM (10 µs) 1.0 1 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 Single pulse 0.2 0.1 tp (µs) 1 10 Figure 6. 100 tP(s) 0.0 1.E-04 0.001 1000 Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E-03 Figure 7. IR(µA) 1.E-02 1.E-01 1.E+00 Forward voltage drop versus forward current (per diode) IFM(A) 1000 1.E+05 Tj=150°C 1.E+04 Tj=125°C (maximum values) Tj=125°C Tj=100°C 1.E+03 100 Tj=75°C Tj=125°C (typical values) 1.E+02 Tj=50°C 1.E+01 Tj=25°C (maximum values) 10 Tj=25°C 1.E+00 VR(V) VFM(V) 1 1.E-01 0 5 10 15 20 25 30 35 40 45 0.0 Doc ID 023045 Rev 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/7 Characteristics Figure 8. STPS2045CH Reverse safe operating area (tp < 10 µs and Tj < 125 °C) Figure 9. Average forward current versus ambient temperature (δ = 0.5, per diode) IF(AV)(A) 12 Iarm (A) 10.0 Rth(j-a)=Rth(j-c) 10 9.0 8.0 8 7.0 6 6.0 4 5.0 T 4.0 Varm (V) 2 3.0 δ = tp/T 30 40 50 60 70 80 0 4/7 T amb (°C) tp 0 Doc ID 023045 Rev 1 25 50 75 100 125 150 175 STPS2045CH 2 Package information Package information ● Epoxy meets UL94, V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. IPAK Dimensions Dimensions Ref. Millimeters Min. A E C2 B2 L Min. Typ. Max. 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A3 0.70 1.30 0.027 0.051 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 0.95 B5 D Max. A B3 L2 H Typ. Inches 0.037 0.30 0.035 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.019 0.023 D 6 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 B3 L1 B A1 V1 e B5 e G 2.28 0.090 C A3 G 4.40 H 4.60 0.173 16.10 0.181 0.634 L 9 9.40 0.354 0.370 L1 0.8 1.20 0.031 0.047 L2 0.80 V1 10° Doc ID 023045 Rev 1 1 0.031 0.039 10° 5/7 Ordering information 3 Ordering information Table 6. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPS2045CH S2045CH IPAK 0.35 g 75 Tube Revision history Table 7. 6/7 STPS2045CH Document revision history Date Revision 21-Jun-2012 1 Changes First issue Doc ID 023045 Rev 1 STPS2045CH Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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