STMICROELECTRONICS STPS2045CH

STPS2045CH
Power Schottky rectifier
Datasheet − production data
Features
A1
■
Very small conduction losses
K
A2
■
Avalanche rated
■
Low forward voltage drop
■
High frequency operation
Description
This device is a dual diode Schottky rectifier,
suited to high frequency switch mode power
supply.
K
A2
A1
Packaged in IPAK, this device is intended to be
used in notebook, game station and desktop
adapters, providing in these applications a good
efficiency at both low and high load.
Table 1.
Electrical characteristics(a)
Figure 1.
IPAK
STPS2045CH
Device summary
Symbol
Value
IF(AV)
2 x 10 A
VRRM
45 V
Tj (max)
175 °C
VF (max)
0.57 V
I
V
"Forwar d"
I
2 x IO
X
IF
VRRM
VR
VAR
IO
X
V
IR
VTo VF(Io ) VF VF(2xI o )
"Re ver se"
IAR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 8. VAR and IAR are
pulse measurements (tp < 10 µs). VR, IR, VRRM and
VF, are static characteristics
June 2012
This is information on a product in full production.
Doc ID 023045 Rev 1
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www.st.com
7
Characteristics
STPS2045CH
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
Forward rms voltage
20
A
IF(AV)
Average forward current δ = 0.5
IFSM
Tc = 155 °C
Per diode
10
Tc = 150 °C
Per package
20
A
Surge non repetitive forward current
tp = 10 ms sine-wave
150
A
(1)
Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
280
W
(2)
Maximum repetitive peak avalanche voltage
tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
VASM(2) Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A
60
V
-65 to + 175
°C
+ 175
°C
PARM
VARM
Tstg
Tj
Storage temperature range
(3)
Maximum operating junction temperature
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. See Figure 8
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
3.
Table 3.
Thermal resistance parameters
Symbol
Parameter
Rth (j-c)
Junction to case
Rth (c)
Coupling
Per diode
Total
Value
Unit
2.50
1.6
°C/W
0.7
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Symbol
IR (1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Tests conditions
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
VF (2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Min.
VR = VRRM
IF = 10 A
Max.
Unit
100
µA
7
15
mA
0.5
0.57
0.84
IF = 20 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
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Typ.
Doc ID 023045 Rev 1
0.65
0.72
V
STPS2045CH
Figure 2.
Characteristics
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
PF(AV)(W)
9
δ = 0.1
δ = 0.05
8
δ = 0.2
δ = 0.5
1000
δ=1
F=1MHz
VOSC=30mVRMS
Tj=25°C
7
500
6
5
4
3
200
2
T
1
δ = tp/T
IF(AV)(A)
VR(V)
tp
100
0
0
2
4
Figure 4.
6
8
10
12
14
Normalized avalanche power
derating versus pulse duration
1
2
Figure 5.
5
10
20
50
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
PARM (tp)
PARM (10 µs)
1.0
1
0.9
0.8
0.7
0.1
0.6
0.5
0.4
0.01
0.3
Single pulse
0.2
0.1
tp (µs)
1
10
Figure 6.
100
tP(s)
0.0
1.E-04
0.001
1000
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
1.E-03
Figure 7.
IR(µA)
1.E-02
1.E-01
1.E+00
Forward voltage drop versus
forward current (per diode)
IFM(A)
1000
1.E+05
Tj=150°C
1.E+04
Tj=125°C
(maximum values)
Tj=125°C
Tj=100°C
1.E+03
100
Tj=75°C
Tj=125°C
(typical values)
1.E+02
Tj=50°C
1.E+01
Tj=25°C
(maximum values)
10
Tj=25°C
1.E+00
VR(V)
VFM(V)
1
1.E-01
0
5
10
15
20
25
30
35
40
45
0.0
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0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
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Characteristics
Figure 8.
STPS2045CH
Reverse safe operating area
(tp < 10 µs and Tj < 125 °C)
Figure 9.
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
IF(AV)(A)
12
Iarm (A)
10.0
Rth(j-a)=Rth(j-c)
10
9.0
8.0
8
7.0
6
6.0
4
5.0
T
4.0
Varm (V)
2
3.0
δ = tp/T
30
40
50
60
70
80
0
4/7
T amb (°C)
tp
0
Doc ID 023045 Rev 1
25
50
75
100
125
150
175
STPS2045CH
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5.
IPAK Dimensions
Dimensions
Ref.
Millimeters
Min.
A
E
C2
B2
L
Min.
Typ.
Max.
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.027
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
0.95
B5
D
Max.
A
B3
L2
H
Typ.
Inches
0.037
0.30
0.035
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.019
0.023
D
6
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
B3
L1
B
A1
V1
e
B5
e
G
2.28
0.090
C
A3
G
4.40
H
4.60
0.173
16.10
0.181
0.634
L
9
9.40
0.354
0.370
L1
0.8
1.20
0.031
0.047
L2
0.80
V1
10°
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10°
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Ordering information
3
Ordering information
Table 6.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STPS2045CH
S2045CH
IPAK
0.35 g
75
Tube
Revision history
Table 7.
6/7
STPS2045CH
Document revision history
Date
Revision
21-Jun-2012
1
Changes
First issue
Doc ID 023045 Rev 1
STPS2045CH
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