STMICROELECTRONICS STPS10L40C

STPS10L40C
Low drop power Schottky rectifier
Main product characteristics
A1
K
IF(AV)
2x5A
VRRM
40 V
Tj (max)
150° C
VF(max)
0.46 V
A2
K
Features and Benefits
■
Low forward voltage drop meaning very small
conduction losses
■
Low dynamic losses as a result of the schottky
barrier
■
Insulated package: TO-220FPAB
insulating voltage = 2000 V DC
capacitance = 12 pF
■
Avalanche capability specified
A2
A2
A1
K
A1
TO-220AB
STPS10L40CT
D2PAK
STPS10L40CG
A2
K
A1
Description
TO-220FPAB
STPS10L40CFP
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, TO-220FPAB and
D2PAK, these devices are intended for use in low
voltage, high frequency inverters, free-wheeling
and polarity protection applications.
March 2007
Rev 6
1/9
www.st.com
9
Characteristics
1
STPS10L40C
Characteristics
Table 1.
Absolute ratings (limiting values)
Symbol
Value
Unit
VRRM
Repetitive peak reverse voltage
40
V
IF(RMS)
RMS forward voltage
20
A
Per diode
Per device
5
10
A
Tc = 140° C Per diode
δ = 0.5
Per device
5
10
A
IF(AV)
Tc =135° C
δ = 0.5
TO-220AB
2
Average forward D PAK
current
TO-220FPAB
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
150
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25°C
2700
W
Storage temperature range
Tstg
dV/dt
dPtot
--------------dTj
-65 to + 150
°C
150
°C
10000
V/µs
Maximum operating junction temperature (1)
Tj
1.
Parameter
<
Table 2.
Critical rate of rise of reverse voltage
1
-------------------------Rth ( j – a )
condition to avoid thermal runaway for a diode on its own heatsink
Thermal resistances
Symbol
Rth(j-c)
Parameter
Junction to case
TO-220AB /
D2PAK
Rth (c)
Rth(j-c)
Junction to case
TO-220FPAB
Rth (c)
Value
Unit
Per diode
Total
3
1.7
°C/W
Coupling
0.35
Per diode
Total
5
3.8
Coupling
2.5
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).
Table 3.
Symbol
IR(1)
VF(1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Forward voltage drop
Test Conditions
Tj = 25° C
Tj = 100° C
VR = VRRM
Tj = 25° C
IF = 5 A
Tj = 100° C
IF = 5 A
Tj = 25° C
IF = 10 A
Tj = 125° C
IF = 10 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.33 x IF(AV) + 0.026 IF2(RMS)
2/9
Min.
Typ.
8
Max.
Unit
0.2
mA
25
mA
0.53
0.36
0.46
0.67
0.49
0.59
V
STPS10L40C
Figure 1.
Characteristics
Average forward power
dissipation versus average
forward current (per diode)
Figure 2.
PF(AV)(W)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
IF(AV)(A)
3.5
6
δ = 0.1
δ = 0.2
Rth(j-a)=Rth(j-c)
δ = 0.5
δ = 0.05
3.0
5
2.5
4
δ=1
2.0
Rth(j-a)=15°C/W
3
1.5
2
1.0
T
T
1
0.5
δ=tp/T
IF(AV)(A)
δ=tp/T
tp
0
0.0
0.0
0.5
1.0
1.5
Figure 3.
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Normalized avalanche power
derating versus pulse duration
0
25
50
Figure 4.
PARM(tp)
PARM(1µs)
Tamb(°C)
tp
75
100
125
150
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
Figure 5.
1
0
10
100
25
1000
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220AB and D2PAK).
50
Figure 6.
IM(A)
75
100
125
150
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
(TO-220FPAB)
IM(A)
100
80
90
70
80
60
70
50
60
TC=25°C
TC=25°C
50
40
TC=75°C
TC=75°C
40
30
30
TC=125°C
20
10
0
1E-3
TC=125°C
20
IM
IM
t
10
t(s)
δ=0.5
1E-2
1E-1
1E+0
0
1E-3
t
t(s)
δ=0.5
1E-2
1E-1
1E+0
3/9
Characteristics
STPS10L40C
Figure 8.
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220AB and D2PAK)
Figure 7.
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
0.6
0.4
Relative variation of thermal
impedance junction to case versus
pulse duration
(TO-220FPAB)
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.2
δ = 0.1
T
0.2
tp(s)
0.0
1E-3
δ=tp/T
1E-2
Figure 9.
tp
1E-1
1E+0
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
T
δ = 0.1
0.2
Single pulse
tp(s)
Single pulse
0.0
1E-3
1E-2
δ=tp/T
1E-1
tp
1E+0
1E+1
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
IR(mA)
C(pF)
1E+2
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1E+1
Tj=100°C
1E+0
100
1E-1
Tj=25°C
1E-2
VR(V)
VR(V)
10
1E-3
0
5
10
15
20
25
30
35
1
40
Figure 11. Forward voltage drop versus
forward current (maximum values,
per diode)
2
5
10
20
50
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, copper thickness:
35 µm) ( D2PAK)
Rth(j-a)(°C/W)
IFM(A)
80
100.0
Tj=150°C
(typical values)
70
60
10.0
Tj=125°C
50
40
Tj=25°C
30
1.0
20
10
VFM(V)
0.1
0.0
4/9
S(Cu)(cm²)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
4
8
12
16
20
24
28
32
36
40
STPS10L40C
2
Package Information
Package Information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 Nm
●
Maximum torque value: 0.70 Nm
Table 4.
TO-220AB dimensions
Dimensions
Ref
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
L4
F
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
M
E
G
Inches
D
L9
G1
Millimeters
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam.
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
5/9
Package Information
Table 5.
STPS10L40C
TO-220FPAB dimensions
Dimensions
Ref
A
B
H
Dia
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.9
0.173
0.193
B
2.5
2.9
0.098
0.114
D
2.45
2.75
0.098
0.114
E
0.4
0.70
0.016
0.027
F
0.60
1
0.024
0.039
F1
1.15
1,70
0.045
0.067
F2
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.204
G1
2.40
2.70
0.094
0.106
H
10
10.7
0.393
0.421
L6
L7
L2
L3
L5
F1
L4
D
F2
L2
F
G1
G
6/9
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.204
L4
9.8
10.7
0.385
0.421
L6
15.8
16.4
0.621
0.645
L7
9.00
9.90
0.354
0.389
Dia.
2.9
3.50
0.114
0.18
STPS10L40C
Package Information
Table 6.
D2PAK dimensions
Dimensions
Ref
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
R
V2
0.40 typ.
0°
8°
0.016 typ.
0°
8°
Figure 13. Footprint (dimensions in millimeters)
16.90
10.30
5.08
1.30
8.90
3.70
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering information
3
4
8/9
STPS10L40C
Ordering information
Ordering type
Marking
Package
Weight
Base
qty
Delivery mode
STPS10L40CT
STPS10L40CT
TO-220AB
2.23 g
50
Tube
STPS10L40CFP
STPS10L40CFP
TO-200FPAB
2g
50
Tube
2
STPS10L40CG
STPS10L40CG
D PAK
1.48 g
50
Tube
STPS10L40CG-TR
STPS10L40CG
D2PAK
1.48 g
1000
Tape and reel
Revision history
Date
Revision
Jul-2003
5B
23-Mar-2007
6
Description of Changes
Last release.
Removed ISOWATT package.
STPS10L40C
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