STMICROELECTRONICS STPS40M120CT

STPS40M120C
Power Schottky rectifier
Datasheet − production data
Features
A1
■
High current capability
■
Avalanche rated
■
Low forward voltage drop
■
High frequency operation
K
A2
K
K
Description
A2
This Schottky diode is suited for high frequency
switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads
and I2PAK, this device is intended to be used in
notebook, game station and desktop adapters,
providing in these applications a good efficiency
at both low and high load.
A1
A2
K
A1
K
I2PAK
STPS40M120CR
TO-220AB narrow leads
STPS40M120CTN
K
A2
Electrical characteristics(a)
Figure 1.
A1
K
I
V
TO-220AB
STPS40M120CT
"Forward"
I
2 x IO
X
IF
VRRM
VR
VAR
IO
Table 1.
X
Device summary
Symbol
Value
IR
IF(AV)
2 x 20 A
VTo VF(Io) VF VF(2xIo)
VRRM
120 V
Tj (max)
150 °C
VF (typ)
0.44 V
V
"Reverse"
IAR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 9. VAR and IAR are
pulse measurements (tp < 10 µs). VR, IR, VRRM and
VF, are static characteristics
April 2012
This is information on a product in full production.
Doc ID 022916 Rev 1
1/9
www.st.com
9
Characteristics
1
STPS40M120C
Characteristics
Table 2.
Absolute ratings (limiting values per diode at Tamb = 25 °C, unless
otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
120
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current, δ = 0.5
IFSM
Per diode
Tc = 130 °C
20
Per device
Tc = 120 °C
40
A
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
PARM(1)
Repetitive peak avalanche power
Tj = 125 °C, tp = 10 µs
1600
W
VARM(2)
Maximum repetitive peak
tp < 10 µs, Tj < 125 °C, IAR < 10.7 A
avalanche voltage
150
V
VASM(2)
Maximum single-pulse
peak avalanche voltage
150
V
-65 to +175
°C
150
°C
Tstg
Tj
tp < 10 µs, Tj < 125 °C, IAR < 10.7 A
Storage temperature range
Maximum operating junction temperature(3)
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
2. See Figure 9
3.
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3.
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
Per diode
Total
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
2/9
1.10
0.80
0.50
When the two diodes 1 and 2 are used simultaneously:
Doc ID 022916 Rev 1
Unit
°C/W
STPS40M120C
Table 4.
Characteristics
Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Test conditions
Tj = 25 °C
Reverse leakage current
VF(2)
VR = VRRM
Tj = 125 °C
Forward voltage drop
Min.
Typ.
Max.
Unit
-
75
370
µA
-
25
70
mA
Tj = 125 °C
IF = 5 A
-
0.44
0.49
Tj = 125 °C
IF = 10 A
-
0.52
0.57
Tj = 25 °C
-
IF = 20 A
Tj = 125 °C
V
0.79
-
0.61
0.67
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.54 x IF(AV) + 0.0065 x IF2(RMS)
Figure 2.
20
Average forward power dissipation Figure 3.
versus average forward current (per
diode)
PF(AV)(W)
24
δ = 0.5
Rth(j-a) = Rth(j-c)
20
δ = 0.2
δ = 0.05
IF(AV)(A)
δ=1
16
12
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
16
δ = 0.1
12
8
8
T
4
4
δ = tp / T
IF(AV)(A)
tp
0
Tamb(°C)
0
0
4
Figure 4.
1
8
12
16
20
24
28
Normalized avalanche power
derating versus pulse duration
0
25
Figure 5.
PARM (t p )
PARM (10 µs)
1.0
50
75
100
125
150
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
0.9
0.8
0.7
0.1
0.6
0.5
0.4
0.01
0.3
Single pulse
0.2
0.1
t p(µs)
0.001
1.E-04
1
10
100
tp(s)
0.0
1.E-03
1.E-02
1.E-01
1.E+00
1000
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Characteristics
Figure 6.
1.E+03
STPS40M120C
Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 7.
IR(mA)
10000
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
F=1MHz
Vosc =30mVRMS
Tj =25°C
1.E+02
Tj =150°C
1.E+01
Tj =125°C
Tj =100°C
1000
1.E+00
Tj =75°C
1.E-01
Tj =50°C
Tj =25°C
1.E-02
VR(V)
1.E-03
0
10
20
Figure 8.
1000.0
30
40
50
60
70
80
90
100
110
120
Forward voltage drop versus
forward current (per diode)
1
10
Figure 9.
100
1000
Reverse safe operating area
(tp < 10 µs and Tj < 125 °C)
IFM(A)
Iarm (A)
100.0
Tj =125°C
(Maximum values)
Tj =125°C
(Typical values)
10.0
Tj =25°C
(Maximum values)
1.0
VFM(V)
0.1
0.0
4/9
VR(V)
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
9.0
120
1.6
Doc ID 022916 Rev 1
Varm (V)
130
140
150
160
170
STPS40M120C
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 5.
TO-220AB narrow leads dimensions
Dimensions
Ref.
Millimeters
Min.
A
P
E
F
Q
H1
D1
L20
L30
L1
b1(x3)
L
1
2
C
b (x3)
e1
Min.
Typ.
Max.
4.40
4.60
0.17
0.18
b
0.61
0.88
0.024
0.034
b1
0.95
1.20
0.037
0.047
c
0.48
0.70
0.019
0.027
D
15.25
15.75
0.60
0.62
1.27
0.05
E
10.00
10.40
0.39
0.41
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.19
0.20
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.24
0.26
J1
2.40
2.72
0.095
0.107
L
13.00
14.00
0.51
0.55
L1
2.60
2.90
0.102
0.114
J1
3
e
Max.
A
D1
D
Typ.
Inches
L20
15.40
0.61
L30
28.90
1.14
∅P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
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Package information
STPS40M120C
Devices in I2PAK with nickel-plated back frame must NOT be mounted by frame soldering
like SMDs. Such devices are intended to be through-hole mounted ONLY and in no
circumstances shall ST be held liable for any lack of performance or damage arising out of
soldering of nickel-plated back frames.
Table 6.
I2PAK dimensions
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.035
b1
1.14
1.70
0.044
0.067
c
0.49
0.70
0.019
0.028
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.195
0.203
E
10
10.40
0.394
0.409
L
13
14
0.512
0.551
L1
3.50
3.93
0.138
0.155
L2
1.27
1.40
0.050
0.055
A
E
c2
L2
D
L1
A1
b1
L
b
c
e
e1
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Doc ID 022916 Rev 1
STPS40M120C
Package information
Table 7.
TO-220AB dimensions
Dimensions
Ref.
Dia
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
C
L5
L7
L6
L2
F2
D
L9
L4
L2
F
M
G1
Inches
A
H2
F1
Millimeters
16.4 Typ.
0.645 Typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
E
G
M
Dia.
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2.6 Typ.
3.75
3.85
0.102 Typ.
0.147
0.151
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Ordering information
3
Ordering information
Table 8.
4
Ordering information
Order code
Marking
Package
Weight
STPS40M120CTN
PS40M120CTN
TO-220AB
narrow leads
1.9 g
50
Tube
STPS40M120CT
PS40M120CT
TO-220AB
1.9 g
50
Tube
STPS40M120CR
PS40M120CR
I2PAK
1.49 g
50
Tube
Base qty Delivery mode
Revision history
Table 9.
8/9
STPS40M120C
Document revision history
Date
Revision
02-Apr-2012
1
Changes
First issue.
Doc ID 022916 Rev 1
STPS40M120C
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