STPSC10H065 650 V power Schottky silicon carbide diode Datasheet production data Features ■ No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A K K K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. A A K TO-220AC STPSC10H065D A NC DPAK STPSC10H065B-TR Table 1. This is information on a product in full production. D2PAK STPSC10H065G-TR K Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. October 2012 NC Doc ID 023604 Rev 2 Device summary Symbol Value IF(AV) 10 A VRRM 650 V Tj (max) 175 °C 1/9 www.st.com 9 Characteristics 1 STPSC10H065 Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 22 A Average forward current Tc = 120 °C, = 0.5 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 90 80 470 A IFRM Repetitive peak forward current Tc = 120 °C,Tj = 150 °C, = 0.1 36 A Tstg Storage temperature range -55 to +175 °C -40 to +175 °C IF(AV) Operating junction Tj 1. dPtot --------------dTj Table 3. 1 -------------------------Rth j – a temperature(1) condition to avoid thermal runaway for a diode on its own heatsink Thermal resistance (typical values) Value Symbol Rth(j-c) Table 4. Parameter Unit Junction to case Typ. Max. 1.25 1.5 °C/W Static electrical characteristics Symbol Parameter Tests conditions IR (1) Reverse leakage current VF (2) Forward voltage drop Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C Min. Typ. Max. - 9 100 - 85 425 - 1.56 1.75 - 1.98 2.5 VR = VRRM IF = 10 A Unit µA V 1. tp = 10 ms, < 2% 2. tp = 500 µs, < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.115 x IF2(RMS) Table 5. Symbol Qcj(1) Cj Dynamic electrical characteristics Parameter Test conditions Total capacitive charge VR = 400 V, Total capacitance Unit 28.5 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 480 VR = 400 V, Tc = 25 °C, F = 1 MHz 48 1. Most accurate value for the capacitive charge: 2/9 Typ. VOUT Qcj = ∫0 cj(vR).dvR Doc ID 023604 Rev 2 pF STPSC10H065 Figure 1. Characteristics Forward voltage drop versus Figure 2. forward current (typical values, low level) IFM(A) 20 18 IFM(A) 100 Pulse test : t p=380µs Forward voltage drop versus forward current (typical values, high level) Pulse test : t p=380µs 90 80 16 Ta=25 °C 70 14 Ta=150 °C 12 10 60 8 40 6 30 4 20 2 Ta=25 °C 50 Ta=175 °C Ta=150 °C 10 VFM(V) Ta=175 °C VFM(V) 0 0 0.0 0.5 Figure 3. 1.E+03 1.0 1.5 2.0 2.5 3.0 0 3.5 Reverse leakage current versus reverse voltage applied (typical values) IR(µA) 1 2 Figure 4. 80 3 4 5 6 Peak forward current versus case temperature T δ = 0.1 Tj=175 °C δ=tp/T 60 tp 50 Tj=150 °C 1.E+01 8 I M (A) 70 1.E+02 7 δ = 0.3 40 δ = 0.5 1.E+00 30 20 1.E-01 Tj=25 °C 1.E-02 0 50 Figure 5. 500 100 150 200 250 300 350 400 450 500 550 600 650 Junction capacitance versus reverse voltage applied (typical values) Cj (pF) 400 0 25 50 Figure 6. 75 100 125 150 175 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.9 0.8 350 0.7 300 0.6 250 0.5 200 0.4 150 0.3 100 TC(°C) 0 1.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C 450 δ = 0.7 δ=1 10 VR(V) 0.2 50 0.1 10.0 0.0 1.E-05 0 0.1 1.0 Single pulse VR(V) 100.0 1000.0 Doc ID 023604 Rev 2 1.E-04 tp(s) 1.E-03 1.E-02 1.E-01 1.E+00 3/9 Characteristics Figure 7. 1.E+03 STPSC10H065 Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) IFSM (A) Figure 8. 32 Total capacitive charges versus reverse voltage applied (typical values) Qcj (nC) 28 Ta=25 °C 24 20 Ta=125 °C 1.E+02 16 12 8 4 VR (V) tp(s) 1.E+01 1.E-05 4/9 0 1.E-04 1.E-03 1.E-02 0 50 Doc ID 023604 Rev 2 100 150 200 250 300 350 400 STPSC10H065 2 Package information Package information ● Epoxy meets UL94, V0 ● Recommended torque value (TO-220AC): 0.4 to 0.6 N·m ● Cooling method: conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AC dimensions Dimensions Ref. A H2 ØI C L5 Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L7 L6 L2 F1 D L9 L2 L4 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 F M E G M Diam. I Doc ID 023604 Rev 2 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 5/9 Package information Table 7. STPSC10H065 DPAK dimensions Dimensions Ref. E A B2 C2 Millimeters Inches Min. Max. Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 D R H L4 A1 B G R C A2 0.60 MIN. L2 V2 Figure 9. 0.80 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Footprint (dimensions in mm) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 6/9 0.031 typ. Doc ID 023604 Rev 2 STPSC10H065 Package information Table 8. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 0.016 typ. 8° 0° 8° Figure 10. Footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 Doc ID 023604 Rev 2 3.70 7/9 Ordering information 3 Ordering information Table 9. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC10H065D STPSC10H065D TO-220AC 1.86 g 50 Tube 2 STPSC10H065G-TR STPSC10H065G D PAK 1.48 g 1000 Tape and reel STPSC10H065B-TR DPAK 0.32 g 2500 Tape and reel STPSC 10H065 Revision history Table 10. 8/9 STPSC10H065 Document revision history Date Revision Changes 31-Aug-2012 1 First issue. 10-Oct-2012 2 Added Max. value to Table 3. Doc ID 023604 Rev 2 STPSC10H065 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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