STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 ■ Suited for SMPS K A2 ■ Low losses ■ Low forward and reverse recovery times ■ High junction temperature ■ Low leakage current ■ AEC-Q101 qualified K K K A2 K A1 Description DPAK STTH1002CBY Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in DPAK and D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. November 2011 Table 1. Doc ID 17536 Rev 2 A2 A1 D2PAK STTH1002CGY Device summary Symbol Value IF(AV) Up to 2 x 8 A VRRM 200 V Tj (max) 175 °C VF(typ) 0.78 V trr (typ) 20 ns 1/9 www.st.com 9 Characteristics STTH1002C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Avarage forward current δ = 0.5 IFSM Surge non repetitive forward current Tstg Tj Table 3. Value Unit 200 V D2PAK 20 DPAK 10 Tc = 155 °C Per diode 5 Tc = 150 °C Per device 10 Tc = 135 °C Per diode 8 Tc = 125 °C Per device 16 A A tp = 10 ms sinusoidal 50 A Storage temperature range -65 to + 175 °C Operating junction temperature range -40 to + 175 °C Value (max) Unit Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(j-c) Coupling Per diode 4.0 Per device 2.5 °C/W 1.0 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4. Symbol IR(1) VF(2) Static electrical characteristics (per diode) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Forward voltage drop Min. Max. Unit 5 VR = VRRM µA 3 40 Tj = 25 °C IF = 5 A 1.1 Tj = 25 °C IF = 10 A 1.25 Tj = 150 °C IF = 5 A Tj = 150 °C IF = 10 A 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.73 x IF(AV) + 0.032 IF2(RMS) 2/9 Typ. Doc ID 17536 Rev 2 V 0.78 0.89 1.05 STTH1002C-Y Table 5. Symbol trr IRM tfr VFP Characteristics Dynamic electrical characteristics Parameter Test conditions Min. Typ. Max. Unit Reverse recovery time Tj = 25 °C IF = 1 A VR = 30 V dIF/dt = 100 A/µs 20 25 ns Reverse recovery current IF = 5 A VR = 160 V dIF/dt = 200 A/µs 5.9 7.6 A 110 ns Tj = 125 °C Forward recovery time Tj = 25 °C IF = 5 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax Forward recovery voltage IF = 5 A Tj = 25 °C dIF/dt = 100 A/µs Doc ID 17536 Rev 2 2.4 V 3/9 Characteristics Figure 1. STTH1002C-Y Peak current versus duty cycle (per diode) Figure 2. IM(A) Forward voltage drop versus forward current (typical values, per diode) IFM(A) 60 100 90 50 80 70 40 60 30 IM P = 10W 50 T Tj=150°C 40 20 P = 5W δ=tp/T tp 30 P = 2W 10 Tj=25°C 20 10 δ 0 0.0 0.1 Figure 3. 0.2 0.3 0.4 VFM(V) 0 0.5 0.6 0.7 0.8 0.9 0.00 1.0 Forward voltage drop versus forward current (maximum values, per diode) 0.25 Figure 4. 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IFM(A) 1.0 100 90 80 70 60 Tj=150°C 50 Single pulse 40 30 Tj=25°C 20 10 VFM(V) tp(s) 0 0.1 0.00 0.25 Figure 5. 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Junction capacitance versus reverse voltage applied (typical values, per diode) 1.E-03 1.E-02 Figure 6. 1.E-01 1.E+00 Reverse recovery charges versus dIF/dt (typical values, per diode) Qrr(nC) C(pF) 240 100 F=1MHz VOSC=30mVRMS Tj=25°C IF=5A VR=160V 220 200 180 160 140 120 Tj=125°C 100 80 60 40 10 dIF/dt(A/µs) 0 0 4/9 Tj=25°C 20 VR(V) 50 100 150 200 10 Doc ID 17536 Rev 2 100 1000 STTH1002C-Y Figure 7. Characteristics Reverse recovery time versus dIF/dt Figure 8. (typical values, per diode) trr(ns) IRM(A) 80 13 IF=5A VR=160V 70 Peak reverse recovery current versus dIF/dt (typical values, per diode) IF=5A VR=160V 12 11 10 60 9 Tj=125°C 50 8 7 40 Tj=125°C 6 5 30 4 20 3 Tj=25°C Tj=25°C 2 10 dIF/dt(A/µs) 1 dIF/dt(A/µs) 0 0 10 100 Figure 9. 10 1000 Dynamic parameters versus junction temperature 100 1000 Figure 10. Thermal resistance junction to ambient versus copper surface under tab for D2PAK Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C] Rth(j-a)(°C/W) 80 1.4 IF=5A VR=160V Epoxy printed circuit board FR4, copper thickness = 35 µm 70 1.2 60 1.0 50 IRM 0.8 40 Qrr 0.6 30 0.4 20 0.2 10 Tj(°C) S(Cu)(cm²) 0.0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness = 35 µm) for DPAK Rth(j-a)(°C/W) 100 90 80 70 60 50 40 30 20 10 S(Cu)(cm²) 0 0 2 4 6 8 10 12 Doc ID 17536 Rev 2 14 16 18 20 5/9 Package mechanical data 2 STTH1002C-Y Package mechanical data ● Epoxy meets UL94, V0 ● Cooling method: by conduction (method C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. DPAK dimensions Dimensions Ref. E A B2 C2 Millimeters Inches Min. Max. Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 D R H L4 A1 B G R C A2 0.60 MIN. V2 L2 0.80 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° Figure 12. Footprint (dimensions in mm) 6.7 3 3 1.6 2.3 6.7 2.3 1.6 6/9 0.031 typ. Doc ID 17536 Rev 2 STTH1002C-Y Package mechanical data Table 7. D2PAK dimensions Dimensions Ref. A E C2 L2 D L B2 Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R C B G A2 M * Inches Min. L3 A1 Millimeters V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 0.016 typ. 8° 0° 8° Figure 13. Footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 Doc ID 17536 Rev 2 3.70 7/9 Ordering information STTH1002C-Y 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty STTH1002CBY-TR STTH1002CY DPAK 0.3 g 2500 STTH1002CGY D2PAK 1.48 g 1000 STTH1002CGY-TR 4 Revision history Table 9. Document revision history 8/9 Tape and reel Date Revision Changes 21-Oct-2010 1 First issue. 03-Nov-2011 2 Updated Table 7 and Table 8. Doc ID 17536 Rev 2 Delivery mode STTH1002C-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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