STTH2003C-Y Automotive high efficiency ultrafast diode Datasheet production data Features ■ High junction temperature A1 ■ Combines highest recovery and reverse voltage performance A2 ■ Ultrafast, soft and noise-free recovery ■ AEC-Q101 qualified K Description K This dual center tap rectifier is suited for switch mode power supplies and high frequency DC to DC converters. A2 Packaged in D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive applications. A1 D2PAK STTH2003CGY-TR Table 1. October 2012 This is information on a product in full production. Doc ID 022396 Rev 1 Device summary IF(AV) 2 x 10 A VRRM 300 V Tj (max) 175 °C VF(max) 1V trr (max) 40 ns 1/7 www.st.com 7 Characteristics STTH2003C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) Forward current rms 48 A IF(AV) Average forward current, = 0.5 Tc = 140 °C Per diode Per device 10 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal (Tj = 25 °C) 110 A Tstg Storage temperature range -65 to + 175 °C Operating junction temperature range -40 to + 175 °C Tj Table 3. Thermal resistance Symbol Rth(j-c) Table 4. Symbol Parameter Value (Max.) Per diode 2.5 Total 1.3 Junction to case °C/W Static electrical characteristics (per diode) Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min. Typ. Max. Unit 20 VR = 300 V µA 30 300 1.25 IF = 10 A 1. Pulse test: tp = 5 ms, < 2% 2. Pulse test: tp = 380 µs, < 2% To evaluate the conduction losses use the following equation: P = 0.75 x IF(AV) + 0.025 IF2(RMS)) 2/7 Unit Doc ID 022396 Rev 1 V 0.85 1 STTH2003C-Y Table 5. Recovery characteristics Symbol trr Characteristics Parameter Test conditions Reverse recovery time Tj = 25 °C Min. Typ. Max. IF = 0.5 A, Irr = 0.25 A IR = 1 A 25 IF = 1 A, VR = 30 V dIF/dt = -50 A/µs 40 Unit ns Forward recovery time Tj = 25 °C IF = 10 A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 230 ns VFP Peak forward voltage Tj = 25 °C IF = 10 A, dIF/dt = 100 A/µs 3.5 V IRM Reverse recovery current IF = 10 A, VCC = 200 V dIF/dt = 200 A/µs 8 A Tj = 125 °C tfr S factor Softness factor Figure 1. Conduction losses versus average Figure 2. forward current (per diode) P1(W) 0.3 - Forward voltage drop versus forward current (maximum values, per diode) IFM(A) 14 δ = 0.05 12 200 δ = 0.1 δ = 0.2 δ = 0.5 100 Tj=125°C 10 δ=1 8 Tj=25°C 10 6 4 Tj=75°C T 2 IF(AV)(A) δ=tp/T 0 0 2 Figure 3. 4 6 8 10 VFM(V) tp 1 0.50 12 0.75 Relative variation of thermal Figure 4. impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 Peak reverse recovery current versus dIF/dt (90% confidence, per diode) IRM(A) 1.0 16 VR=200V Tj=125°C 14 IF=2 x IF(AV) 0.8 12 0.6 10 0.4 6 IF=IF(AV) IF=0.5 x IF(AV) 8 4 0.2 Single pulse 2 dIF/dt(A/µs) tp(s) 0.0 1E-3 0 1E-2 1E-1 1E+0 0 50 Doc ID 022396 Rev 1 100 150 200 250 300 350 400 450 500 3/7 Characteristics Figure 5. STTH2003C-Y Reverse recovery time versus dIF/dt Figure 6. (90% confidence, per diode) trr(ns) Softness factor (tb/ta) versus dIF/dt (typical values, per diode) S factor 0.60 100 VR=200V Tj=125°C VR=200V Tj=125°C 0.50 80 IF=IF(AV) 0.40 60 IF=2 x IF(AV) IF=0.5 x IF(AV) 0.30 40 0.20 20 0.10 dIF/dt(A/µs) dIF/dt(A/µs) 0.00 0 0 50 Figure 7. 100 150 200 250 300 350 400 450 0 500 50 Relative variation of dynamic Figure 8. parameters versus junction temperature (reference: Tj = 125 °C) 2.4 100 150 200 250 300 350 400 450 500 Forward recovery time versus dIF/dt (90% confidence, per diode) tfr(ns) 500 2.2 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 2.0 1.8 400 S factor 1.6 1.4 300 1.2 1.0 200 0.8 IRM 0.6 100 0.4 0.2 Tj(°C) dIF/dt(A/µs) 0.0 0 25 50 Figure 9. 75 100 125 Thermal resistance, junction to ambient, versus copper surface under tab 0 50 100 150 250 300 350 400 450 500 Figure 10. Average forward current versus ambient temperature ( = 0.5per diode) Rth(j-a)(°C/W) 12 80 IF(AV)(A) 11 Printed circuit board FR4, copper thickness: 35 µm 70 200 Rth(j-a) = Rth(j-c) 10 9 60 8 50 7 6 40 5 30 4 3 20 2 10 0 0 4/7 1 SCu(cm²) 5 10 15 20 Tamb(°C) 0 25 30 35 40 0 Doc ID 022396 Rev 1 25 50 75 100 125 150 175 STTH2003C-Y 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. D2PAK dimensions Dimensions Ref. A E C2 L2 D Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R V2 0.40 typ. 0° 0.016 typ. 8° 0° 8° Figure 11. Footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 Doc ID 022396 Rev 1 3.70 5/7 Ordering information 3 Ordering information Table 7. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STTH2003CGY-TR STTH2003CGY D2PAK 1.48 g 1000 Tape and reel Revision history Table 8. 6/7 STTH2003C-Y Document revision history Date Revision 24-Oct-2012 1 Changes Initial release. Doc ID 022396 Rev 1 STTH2003C-Y Please Read Carefully: Information in this document is provided solely in connection with ST products. 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