STMICROELECTRONICS STTH2003C-Y

STTH2003C-Y
Automotive high efficiency ultrafast diode
Datasheet  production data
Features
■
High junction temperature
A1
■
Combines highest recovery and reverse
voltage performance
A2
■
Ultrafast, soft and noise-free recovery
■
AEC-Q101 qualified
K
Description
K
This dual center tap rectifier is suited for switch
mode power supplies and high frequency DC to
DC converters.
A2
Packaged in D2PAK, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
applications.
A1
D2PAK
STTH2003CGY-TR
Table 1.
October 2012
This is information on a product in full production.
Doc ID 022396 Rev 1
Device summary
IF(AV)
2 x 10 A
VRRM
300 V
Tj (max)
175 °C
VF(max)
1V
trr (max)
40 ns
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7
Characteristics
STTH2003C-Y
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS)
Forward current rms
48
A
IF(AV)
Average forward current,  = 0.5
Tc = 140 °C
Per diode
Per device
10
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal (Tj = 25 °C)
110
A
Tstg
Storage temperature range
-65 to + 175
°C
Operating junction temperature range
-40 to + 175
°C
Tj
Table 3.
Thermal resistance
Symbol
Rth(j-c)
Table 4.
Symbol
Parameter
Value (Max.)
Per diode
2.5
Total
1.3
Junction to case
°C/W
Static electrical characteristics (per diode)
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Min.
Typ.
Max.
Unit
20
VR = 300 V
µA
30
300
1.25
IF = 10 A
1. Pulse test: tp = 5 ms,  < 2%
2. Pulse test: tp = 380 µs,  < 2%
To evaluate the conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.025 IF2(RMS))
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Unit
Doc ID 022396 Rev 1
V
0.85
1
STTH2003C-Y
Table 5.
Recovery characteristics
Symbol
trr
Characteristics
Parameter
Test conditions
Reverse recovery time
Tj = 25 °C
Min.
Typ.
Max.
IF = 0.5 A, Irr = 0.25 A
IR = 1 A
25
IF = 1 A, VR = 30 V
dIF/dt = -50 A/µs
40
Unit
ns
Forward recovery time
Tj = 25 °C
IF = 10 A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
230
ns
VFP
Peak forward voltage
Tj = 25 °C
IF = 10 A,
dIF/dt = 100 A/µs
3.5
V
IRM
Reverse recovery current
IF = 10 A, VCC = 200 V
dIF/dt = 200 A/µs
8
A
Tj = 125 °C
tfr
S factor Softness factor
Figure 1.
Conduction losses versus average Figure 2.
forward current (per diode)
P1(W)
0.3
-
Forward voltage drop versus
forward current (maximum values,
per diode)
IFM(A)
14
δ = 0.05
12
200
δ = 0.1
δ = 0.2
δ = 0.5
100
Tj=125°C
10
δ=1
8
Tj=25°C
10
6
4
Tj=75°C
T
2
IF(AV)(A)
δ=tp/T
0
0
2
Figure 3.
4
6
8
10
VFM(V)
tp
1
0.50
12
0.75
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
Peak reverse recovery current
versus dIF/dt (90% confidence, per
diode)
IRM(A)
1.0
16
VR=200V
Tj=125°C
14
IF=2 x IF(AV)
0.8
12
0.6
10
0.4
6
IF=IF(AV)
IF=0.5 x IF(AV)
8
4
0.2
Single pulse
2
dIF/dt(A/µs)
tp(s)
0.0
1E-3
0
1E-2
1E-1
1E+0
0
50
Doc ID 022396 Rev 1
100
150
200
250
300
350
400
450
500
3/7
Characteristics
Figure 5.
STTH2003C-Y
Reverse recovery time versus dIF/dt Figure 6.
(90% confidence, per diode)
trr(ns)
Softness factor (tb/ta) versus dIF/dt
(typical values, per diode)
S factor
0.60
100
VR=200V
Tj=125°C
VR=200V
Tj=125°C
0.50
80
IF=IF(AV)
0.40
60
IF=2 x IF(AV)
IF=0.5 x IF(AV)
0.30
40
0.20
20
0.10
dIF/dt(A/µs)
dIF/dt(A/µs)
0.00
0
0
50
Figure 7.
100
150
200
250
300
350
400
450
0
500
50
Relative variation of dynamic
Figure 8.
parameters versus junction
temperature (reference: Tj = 125 °C)
2.4
100
150
200
250
300
350
400
450
500
Forward recovery time versus dIF/dt
(90% confidence, per diode)
tfr(ns)
500
2.2
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
2.0
1.8
400
S factor
1.6
1.4
300
1.2
1.0
200
0.8
IRM
0.6
100
0.4
0.2
Tj(°C)
dIF/dt(A/µs)
0.0
0
25
50
Figure 9.
75
100
125
Thermal resistance, junction to
ambient, versus copper surface
under tab
0
50
100
150
250
300
350
400
450
500
Figure 10. Average forward current versus
ambient temperature
( = 0.5per diode)
Rth(j-a)(°C/W)
12
80
IF(AV)(A)
11
Printed circuit board FR4,
copper thickness: 35 µm
70
200
Rth(j-a) = Rth(j-c)
10
9
60
8
50
7
6
40
5
30
4
3
20
2
10
0
0
4/7
1
SCu(cm²)
5
10
15
20
Tamb(°C)
0
25
30
35
40
0
Doc ID 022396 Rev 1
25
50
75
100
125
150
175
STTH2003C-Y
2
Package information
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
D2PAK dimensions
Dimensions
Ref.
A
E
C2
L2
D
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
R
V2
0.40 typ.
0°
0.016 typ.
8°
0°
8°
Figure 11. Footprint (dimensions in mm)
16.90
10.30
5.08
1.30
8.90
Doc ID 022396 Rev 1
3.70
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Ordering information
3
Ordering information
Table 7.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STTH2003CGY-TR
STTH2003CGY
D2PAK
1.48 g
1000
Tape and reel
Revision history
Table 8.
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STTH2003C-Y
Document revision history
Date
Revision
24-Oct-2012
1
Changes
Initial release.
Doc ID 022396 Rev 1
STTH2003C-Y
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