STMICROELECTRONICS STU4N62K3

STF4N62K3, STFI4N62K3, STI4N62K3,
STP4N62K3, STU4N62K3
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET
in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STF4N62K3
STFI4N62K3
STI4N62K3
STP4N62K3
STU4N62K3
TAB
VDSS
RDS(on) max
620 V
<2Ω
ID
PTOT
3.8 A
25 W
25 W
70 W
70 W
70 W
3
1
3
12
2
TO-220FP
I²PAK
TAB
1
2
TAB
3
I²PAKFP
■
100% avalanche tested
■
Extremely high dv/dt capability
■
Gate charge minimized
■
Very low intrinsic capacitance
■
Improved diode reverse recovery
characteristics
■
Zener-protected
3
3
1
2
2
1
TO-220
Figure 1.
IPAK
Internal schematic diagram
D(2,TAB)
Applications
■
Switching applications
G(1)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1.
S(3)
AM01476v1
Device summary
Order codes
STF4N62K3
STFI4N62K3
STI4N62K3
STP4N62K3
STU4N62K3
August 2012
This is information on a product in full production.
Marking
Package
Packaging
4N62K3
TO-220FP
I²PAKFP
I²PAK
TO-220
IPAK
Tube
Doc ID 17548 Rev 4
1/19
www.st.com
19
Contents
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate- source voltage
ID
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
Unit
TO-220FP
I²PAK
I²PAKFP
TO-220
3.8
IPAK
620
V
± 30
V
(1)
3.8
A
2
A
15.2 (1)
15.2
A
25
70
W
2
(1)
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
3.8
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
115
mJ
ESD
Gate-source human body model (R = 1.5
kΩ, C = 100 pF)
2.5
kV
Peak diode recovery voltage slope
12
V/ns
dv/dt (3)
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS.
Table 3.
Thermal data
Value
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Doc ID 17548 Rev 4
Unit
TO-220FP
I²PAK
I²PAKFP
TO-220
5
1.79
62.5
IPAK
°C/W
°C/W
3/19
Electrical characteristics
2
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Gate threshold voltage VDS = VGS, ID = 50 µA
RDS(on
Static drain-source on
resistance
Symbol
Typ.
Max.
Unit
620
V
1
50
µA
µA
± 10
µA
3.75
4.5
V
1.7
2
Ω
Typ.
Max.
Unit
VGS = ± 20 V
VGS(th)
Table 5.
Min.
3
VGS = 10 V, ID = 1.9 A
Dynamic
Parameter
Test conditions
Min.
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
550
42
7
pF
pF
pF
Equivalent output
capacitance
VDS = 0 to 496 V, VGS = 0
27
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 496 V, ID = 3.8 A,
VGS = 10 V
(see Figure 20)
Ciss
Coss
Crss
Coss eq.(1)
2
5
22
4
13
Ω
10
nC
nC
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Table 6.
Symbol
td(on)
tr
td(off)
tf
Table 7.
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 1.9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Min.
Typ.
-
10
9
29
19
Min.
Typ.
Max.
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Electrical characteristics
Test conditions
Max. Unit
-
3.8
15.2
A
A
ISD = 3.8 A, VGS = 0
-
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 24)
-
220
1.4
13
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3.8 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 24)
-
270
1.9
14
ns
µC
A
Min.
Typ.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 8.
Symbol
V(BR)GSO
Gate-source Zener diode
Parameter
Test conditions
Gate-source breakdown
voltage (ID = 0)
Igs= ± 1 mA
30
Max.
-
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17548 Rev 4
5/19
Electrical characteristics
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
I²PAK
Figure 3.
Thermal impedance for TO-220,
I²PAK
Figure 5.
Thermal impedance for TO-220FP,
I²PAKFP
Figure 7.
Thermal impedance for IPAK
AM07172v1
ID
(A)
10
is
10µs
1
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-220FP,
I²PAKFP
AM07174v1
ID
(A)
10
n)
D
S(
o
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for IPAK
AM07173v1
10
10µs
on
)
100µs
1
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single pulse
0.01
0.1
6/19
1
10
100
VDS(V)
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Figure 8.
Output characteristics
Figure 9.
AM07175v1
ID (A)
8
Transfer characteristics
AM07176v1
ID
(A)
VGS=10V
VDS=15V
6
7V
7
Electrical characteristics
5
6
4
5
4
3
6V
3
2
2
1
1
5V
0
0
5
10
15
20
25
0
0
VDS(V)
2
4
8
6
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM07177v1
VDS
VGS
(V) VDS
12
(V)
VDD=496V
ID=3.8A
500
10
AM07178v1
RDS(on)
(Ω)
VGS=10V
1.9
400
1.8
8
300
6
1.7
200
4
100
2
0
0
10
5
15
0
25 Qg(nC)
20
Figure 12. Capacitance variations
1.5
0
1
2
3
ID(A)
Figure 13. Output capacitance stored energy
AM07179v1
C
(pF)
1.6
AM07180v1
Eoss
(µJ)
3.0
1000
Ciss
2.5
2.0
100
1.5
Coss
10
1.0
Crss
0.5
1
0.1
1
10
100
VDS(V)
Doc ID 17548 Rev 4
0
0
100
200 300
400 500 600
VDS(V)
7/19
Electrical characteristics
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Figure 14. Normalized gate threshold voltage
vs temperature
AM07181v1
VGS(th)
(norm)
1.10
Figure 15. Normalized on resistance vs
temperature
AM07182v1
RDS(on)
(norm)
2.5
ID = 50 µA
VGS = 10 V
ID = 1.9 A
2.0
1.00
1.5
0.90
1.0
0.80
0.70
-75
0.5
25
-25
75
Figure 16. Maximum avalanche energy vs
starting Tj
EAS
(mJ)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
-75
TJ(°C)
125
AM07184v1
ID=3.8 A
VDD=50 V
1.0
TJ(°C)
AM07183v1
1.10
1.05
1.00
0.95
20
40
60
80
100 120 140 TJ(°C)
0.90
-75
AM08888v1
TJ=150°C
TJ=25°C
TJ=-50°C
0.6
0.5
0.4
0.3
0.2
8/19
125
BVDSS
(norm)
0.8
0.1
0
75
ID = 1 mA
0.9
0.7
25
Figure 17. Normalized BVDSS vs temperature
Figure 18. Source-drain diode forward
characteristics
VSD (V)
-25
1
2
3
4
5
ISD(A)
Doc ID 17548 Rev 4
-25
25
75
125
TJ(°C)
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17548 Rev 4
10%
AM01473v1
9/19
Package mechanical data
4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
10/19
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Package mechanical data
Figure 25. TO-220FP drawing
7012510_Rev_K_B
Doc ID 17548 Rev 4
11/19
Package mechanical data
Table 10.
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
I2PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.30
7.50
-
5.20
Figure 26. I2PAKFP (TO-281) drawing
REV!
12/19
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Table 11.
Package mechanical data
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 27. I²PAK (TO-262) drawing
0004982_Rev_H
Doc ID 17548 Rev 4
13/19
Package mechanical data
Table 12.
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/19
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Package mechanical data
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 17548 Rev 4
15/19
Package mechanical data
Table 13.
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
16/19
max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
Doc ID 17548 Rev 4
1.00
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Package mechanical data
Figure 29. IPAK (TO-251) drawing
0068771_J
Doc ID 17548 Rev 4
17/19
Revision history
5
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
Revision history
Table 14.
Document revision history
Date
Revision
05-May-2010
1
First release
16-Dec-2010
2
Document status promoted from preliminary data to datasheet.
27-Mar-2012
3
Inserted max and min. values for RG in Table 5.
Updated Section 4: Package mechanical data.
4
Added package, mechanical data: I²PAKFP.
Updated Table 1: Device summary, Table 2: Absolute maximum
ratings, Table 3: Thermal data, Table 4: On /off states, Table 13: IPAK
(TO-251) mechanical data and Figure 29: IPAK (TO-251) drawing
Minor text changes.
07-Aug-2012
18/19
Changes
Doc ID 17548 Rev 4
STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3
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Doc ID 17548 Rev 4
19/19