STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 and IPAK packages Datasheet — production data Features Order codes STF4N62K3 STFI4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 TAB VDSS RDS(on) max 620 V <2Ω ID PTOT 3.8 A 25 W 25 W 70 W 70 W 70 W 3 1 3 12 2 TO-220FP I²PAK TAB 1 2 TAB 3 I²PAKFP ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 3 1 2 2 1 TO-220 Figure 1. IPAK Internal schematic diagram D(2,TAB) Applications ■ Switching applications G(1) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes STF4N62K3 STFI4N62K3 STI4N62K3 STP4N62K3 STU4N62K3 August 2012 This is information on a product in full production. Marking Package Packaging 4N62K3 TO-220FP I²PAKFP I²PAK TO-220 IPAK Tube Doc ID 17548 Rev 4 1/19 www.st.com 19 Contents STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter VDS Drain-source voltage VGS Gate- source voltage ID ID Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C Unit TO-220FP I²PAK I²PAKFP TO-220 3.8 IPAK 620 V ± 30 V (1) 3.8 A 2 A 15.2 (1) 15.2 A 25 70 W 2 (1) IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 3.8 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 115 mJ ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.5 kV Peak diode recovery voltage slope 12 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 3.8 A, di/dt = 400 A/µs, VDD = 80% V(BR)DSS, VDS peak ≤ V(BR)DSS. Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Doc ID 17548 Rev 4 Unit TO-220FP I²PAK I²PAKFP TO-220 5 1.79 62.5 IPAK °C/W °C/W 3/19 Electrical characteristics 2 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source on resistance Symbol Typ. Max. Unit 620 V 1 50 µA µA ± 10 µA 3.75 4.5 V 1.7 2 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Table 5. Min. 3 VGS = 10 V, ID = 1.9 A Dynamic Parameter Test conditions Min. Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 550 42 7 pF pF pF Equivalent output capacitance VDS = 0 to 496 V, VGS = 0 27 pF RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 3.8 A, VGS = 10 V (see Figure 20) Ciss Coss Crss Coss eq.(1) 2 5 22 4 13 Ω 10 nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Table 6. Symbol td(on) tr td(off) tf Table 7. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 1.9 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 10 9 29 19 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 3.8 15.2 A A ISD = 3.8 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3.8 A, di/dt = 100 A/µs VDD = 60 V (see Figure 24) - 220 1.4 13 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 3.8 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 24) - 270 1.9 14 ns µC A Min. Typ. 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol V(BR)GSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage (ID = 0) Igs= ± 1 mA 30 Max. - Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 17548 Rev 4 5/19 Electrical characteristics STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, I²PAK Figure 3. Thermal impedance for TO-220, I²PAK Figure 5. Thermal impedance for TO-220FP, I²PAKFP Figure 7. Thermal impedance for IPAK AM07172v1 ID (A) 10 is 10µs 1 D S( on ) O Li per m at ite io d ni by n m this ax a R rea 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220FP, I²PAKFP AM07174v1 ID (A) 10 n) D S( o O Li per m at ite io d ni by n m this ax a R rea is 10µs 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for IPAK AM07173v1 10 10µs on ) 100µs 1 D S( O Li per m at ite io d ni by n m this ax a R rea is ID (A) 1ms 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 6/19 1 10 100 VDS(V) Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Figure 8. Output characteristics Figure 9. AM07175v1 ID (A) 8 Transfer characteristics AM07176v1 ID (A) VGS=10V VDS=15V 6 7V 7 Electrical characteristics 5 6 4 5 4 3 6V 3 2 2 1 1 5V 0 0 5 10 15 20 25 0 0 VDS(V) 2 4 8 6 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM07177v1 VDS VGS (V) VDS 12 (V) VDD=496V ID=3.8A 500 10 AM07178v1 RDS(on) (Ω) VGS=10V 1.9 400 1.8 8 300 6 1.7 200 4 100 2 0 0 10 5 15 0 25 Qg(nC) 20 Figure 12. Capacitance variations 1.5 0 1 2 3 ID(A) Figure 13. Output capacitance stored energy AM07179v1 C (pF) 1.6 AM07180v1 Eoss (µJ) 3.0 1000 Ciss 2.5 2.0 100 1.5 Coss 10 1.0 Crss 0.5 1 0.1 1 10 100 VDS(V) Doc ID 17548 Rev 4 0 0 100 200 300 400 500 600 VDS(V) 7/19 Electrical characteristics STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Figure 14. Normalized gate threshold voltage vs temperature AM07181v1 VGS(th) (norm) 1.10 Figure 15. Normalized on resistance vs temperature AM07182v1 RDS(on) (norm) 2.5 ID = 50 µA VGS = 10 V ID = 1.9 A 2.0 1.00 1.5 0.90 1.0 0.80 0.70 -75 0.5 25 -25 75 Figure 16. Maximum avalanche energy vs starting Tj EAS (mJ) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 -75 TJ(°C) 125 AM07184v1 ID=3.8 A VDD=50 V 1.0 TJ(°C) AM07183v1 1.10 1.05 1.00 0.95 20 40 60 80 100 120 140 TJ(°C) 0.90 -75 AM08888v1 TJ=150°C TJ=25°C TJ=-50°C 0.6 0.5 0.4 0.3 0.2 8/19 125 BVDSS (norm) 0.8 0.1 0 75 ID = 1 mA 0.9 0.7 25 Figure 17. Normalized BVDSS vs temperature Figure 18. Source-drain diode forward characteristics VSD (V) -25 1 2 3 4 5 ISD(A) Doc ID 17548 Rev 4 -25 25 75 125 TJ(°C) STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17548 Rev 4 10% AM01473v1 9/19 Package mechanical data 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/19 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B Doc ID 17548 Rev 4 11/19 Package mechanical data Table 10. STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 26. I2PAKFP (TO-281) drawing REV! 12/19 Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Table 11. Package mechanical data I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 27. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 17548 Rev 4 13/19 Package mechanical data Table 12. STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Package mechanical data Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 17548 Rev 4 15/19 Package mechanical data Table 13. STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 16/19 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° Doc ID 17548 Rev 4 1.00 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Package mechanical data Figure 29. IPAK (TO-251) drawing 0068771_J Doc ID 17548 Rev 4 17/19 Revision history 5 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Revision history Table 14. Document revision history Date Revision 05-May-2010 1 First release 16-Dec-2010 2 Document status promoted from preliminary data to datasheet. 27-Mar-2012 3 Inserted max and min. values for RG in Table 5. Updated Section 4: Package mechanical data. 4 Added package, mechanical data: I²PAKFP. Updated Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data, Table 4: On /off states, Table 13: IPAK (TO-251) mechanical data and Figure 29: IPAK (TO-251) drawing Minor text changes. 07-Aug-2012 18/19 Changes Doc ID 17548 Rev 4 STF4N62K3, STFI4N62K3, STI4N62K3, STP4N62K3, STU4N62K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 17548 Rev 4 19/19