STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω ID 10 A 10 A(1) 10 A 10 A 10 A 3 3 12 1 DPAK I²PAK 3 2 1 IPAK 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities 3 1 1 2 TO-220FP TO-220 Figure 1. Application 3 2 Internal schematic diagram Switching applications $ Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND October 2010 ' 3 !-V Marking Package Packaging 11NM60ND DPAK TO-220FP I2PAK TO-220 IPAK Tape and reel Tube Tube Tube Tube Doc ID 14625 Rev 2 1/19 www.st.com 19 Contents STD/F/I/P/U11NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK/I²PAK, TO-220/IPAK TO-220FP VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25°C 10 10 (1) A ID Drain current (continuous) at TC = 100°C 6.3 6.3(1) A IDM (2) Drain current (pulsed) 40 40 (1) A PTOT Total dissipation at TC = 25°C 90 25 W dv/dt (3) Peak diode recovery voltage slope 40 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25°C) Tstg Storage temperature Tj V/ns 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, peak VDS ≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 I²PAK DPAK IPAK TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 1.38 62.5 Rthj-pcb(1) Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purposes 100 5 °C/W 62.5 °C/W 50 300 °C/W 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 14625 Rev 2 3/19 Electrical ratings Table 4. STD/F/I/P/U11NM60ND Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive(1) 3.5 A EAS Single pulse avalanche energy (2) 200 mJ 1. Pulse width limited by Tj max 2. starting Tj= 25 °C, ID=IAS, VDD= 50 V 4/19 Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 Drain-source voltage slope VDD = 480 V,ID = 10 A, VGS = 10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating, VDS = max rating,@125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5 A 0.37 0.45 Ω Min. Typ. Max. Unit V(BR)DSS dv/dt(1) 600 V 45 3 V/ns 1. Value measured at turn off under inductive load Table 6. Symbol Parameter Test conditions gfs(1) Forward transconductance VDS =15 V, ID= 5 A - 7.5 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f =1 MHz, VGS = 0 - 850 44 5 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0V to 480 V - 130 - pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 3.7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 10 A VGS = 10 V (see Figure 19) - 30 4 16 - nC nC nC Coss eq.(2) 1. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Doc ID 14625 Rev 2 5/19 Electrical characteristics STD/F/I/P/U11NM60ND Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Max Unit - 16 7 50 9 - ns ns ns ns Min Typ Max Unit - 10 40 A A 1.3 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 10 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) - 130 0.69 11 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 10 A Tj = 150 °C (see Figure 20) - 200 1.2 12 ns µC A IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 6/19 Typ ISD ISDM (1) trr Qrr 2. Min Pulsed: pulse duration = 300µs, duty cycle 1.5% Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, I²PAK Figure 3. Thermal impedance for TO-220, I²PAK Figure 5. Thermal impedance for TO-220FP !-V )$ ! S $3 O N /P ,IM ERA ITE TION D IN BY TH M IS AX AR 2 E A IS S MS 3INGLE PULSE MS Figure 4. 4J # 4C # 6$36 Safe operating area for TO-220FP AM08612v1 ID (A) on ) 10µs S( pe ra ite tion d by in t m his ax a RD rea is 10 Li O 100µs m 1 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 Figure 6. 10 1 100 Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK AM08613v1 ID (A) 10µs ) on S( Op Lim era ite tion d by in th m is ax ar RD ea is 10 1 VDS(V) 100µs 1ms Tj=150°C Tc=25°C 10ms Single pulse 0.1 0.1 1 10 100 VDS(V) Doc ID 14625 Rev 2 7/19 Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance STD/F/I/P/U11NM60ND Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/19 Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Doc ID 14625 Rev 2 9/19 Test circuits 3 STD/F/I/P/U11NM60ND Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 10/19 0 Doc ID 14625 Rev 2 10% AM01473v1 STD/F/I/P/U11NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 14625 Rev 2 11/19 Package mechanical data Table 9. STD/F/I/P/U11NM60ND TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 12/19 Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 14625 Rev 2 13/19 Package mechanical data STD/F/I/P/U11NM60ND I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/19 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 14625 Rev 2 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STD/F/I/P/U11NM60ND Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 A1 0.90 2.40 1.10 A2 0.03 0.23 0.90 b 0.64 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 14625 Rev 2 15/19 Package mechanical data STD/F/I/P/U11NM60ND TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 (L1) 0.80 9.40 1.20 L2 0.80 V1 10 o 0068771_H 16/19 Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. A0 6.8 7 0.267 0.275 10.4 10.6 0.409 0.417 D 1.5 D1 1.5 E 1.65 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 K0 W MIN. MAX. B0 B1 inch MAX. 1.574 16.3 0.618 0.641 Doc ID 14625 Rev 2 17/19 Revision history 6 STD/F/I/P/U11NM60ND Revision history Table 10. 18/19 Document revision history Date Revision Changes 23-Apr-2008 1 First release 25-Oct-2010 2 – Corrected Figure 2: Safe operating area for TO-220, I²PAK – Corrected Figure 4: Safe operating area for TO-220FP – Corrected Figure 6: Safe operating area for DPAK, IPAK Doc ID 14625 Rev 2 STD/F/I/P/U11NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. 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