STB11N52K3, STF11N52K3 STP11N52K3 N-channel 525 V, 0.41 Ω, 10 A SuperMESH3™ Power MOSFET in D²PAK,TO-220FP and TO-220 packages Datasheet — production data Features TAB Order codes VDSS RDS(on) max. ID 525 V < 0.51 Ω 10 A Pw STB11N52K3 STF11N52K3 125 W 30 W STP11N52K3 125 W 3 3 1 2 1 TO-220 2 TO-220FP TAB ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 1 D²PAK Figure 1. Internal schematic diagram D(2,TAB) Applications ■ Switching applications Description G(1) These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. S(3) AM01476v1 Device summary Order codes Marking Packages Packaging STB11N52K3 STF11N52K3 STP11N52K3 11N52K3 D²PAK TO-220FP TO-220 Tape and reel Tube Tube March 2012 This is information on a product in full production. Doc ID 018868 Rev 2 1/20 www.st.com 20 Contents STB11N52K3, STF11N52K3, STP11N52K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 Doc ID 018868 Rev 2 STB11N52K3, STF11N52K3, STP11N52K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK TO-220FP VDS Drain- source voltage 525 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C 10 (1) 10 Drain current (continuous) at TC = 100 °C 6 6 Drain current (pulsed) 40 40 Total dissipation at TC = 25 °C 125 A (1) A (1) A 30 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by TJ max) 5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 170 mJ VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ) 2500 V dv/dt(3) Peak diode recovery voltage slope 12 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) TJ Tstg Operating junction temperature Storage temperature 2500 - 55 to 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max TJ Maximum lead temperature for soldering purpose Doc ID 018868 Rev 2 Unit TO-220 TO-220FP D²PAK 1 4.17 1 62.50 °C/W 30 300 °C/W °C/W °C/W 3/20 Electrical characteristics 2 STB11N52K3, STF11N52K3, STP11N52K3 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 525 V IDSS Zero gate voltage VDS = 525 V drain current (VGS = 0) VDS = 525 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.75 4.5 V 0.41 0.51 Ω Min. Typ. Max. Unit VGS = ± 20 V; VDS=0 VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1400 110 22 - pF pF pF Equivalent output capacitance VDS = 0 to 420 V, VGS = 0 - 83 - pF Rg Gate input resistance f=1 MHz open drain 1 3 7 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 420 V, ID = 10 A, VGS = 10 V (see Figure 18) - 51 8 32 - nC nC nC Ciss Coss Crss Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 6. Switching times Symbol Parameter td(on) tr td(off) tf 4/20 Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 210 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Doc ID 018868 Rev 2 Min. Typ. - 7 18 281 42 Max Unit - ns ns ns ns STB11N52K3, STF11N52K3, STP11N52K3 Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Electrical characteristics Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Max Unit - 10 40 A A 1.5 V Forward on voltage ISD = 10 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD= 60 V (see Figure 19) - 270 2700 20 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 19) - 320 3400 22 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Min. Typ. 30 - Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 018868 Rev 2 5/20 Electrical characteristics STB11N52K3, STF11N52K3, STP11N52K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, D²PAK Figure 3. Thermal impedance for TO-220, D²PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics AM09112v1 ID (A) Tj=150°C Tc=25°C Single pulse on ) 10µs 100µs DS ( Op Lim era ite tion d by in th m is ax ar R ea is 10 1 1ms 10ms 0.1 0.1 Figure 4. 10 1 VDS(V) 100 Safe operating area for TO-220FP AM09113v1 ID (A) Tj=150°C Tc=25°C Single pulse is ea ) ar S(on th RD in ax n it o y m b ra pe ed O mit i L 10 10µs is 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 VDS(V) 100 Output characteristics AM09114v1 ID (A) AM09115v1 ID (A) VDS=15V VGS=10V 20 20 7V 15 15 6V 10 10 5 5 5V 0 0 6/20 5 10 15 20 25 VDS(V) 0 0 Doc ID 018868 Rev 2 1 2 3 4 5 6 7 8 9 VGS(V) STB11N52K3, STF11N52K3, STP11N52K3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM09116v1 VGS (V) VDS VDD=420V ID=10A 12 10 Static drain-source on resistance 400 0.54 350 0.52 300 8 250 6 200 AM09117v1 RDS(on) (Ω) VGS=10V 0.50 0.48 0.46 150 4 100 2 0 0 20 40 60 0.44 0.42 0.40 50 0.38 0 Qg(nC) 0.36 0 Figure 10. Capacitance variations 4 2 6 8 10 12 Figure 11. Output capacitance stored energy AM09118v1 C (pF) ID(A) AM09119v1 Eoss (µJ) 6 1000 5 Ciss 4 100 3 Coss 10 2 Crss 1 1 0.1 1 100 10 Figure 12. Normalized gate threshold voltage vs temperature AM09120v1 VGS(th) 0 0 VDS(V) (norm) 200 100 300 400 500 VDS(V) Figure 13. Normalized on resistance vs temperature AM09121v1 RDS(on) (norm) ID=1.2A 1.10 2.5 2.0 1.00 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) 0.0 -50 -25 Doc ID 018868 Rev 2 0 25 50 75 100 TJ(°C) 7/20 Electrical characteristics STB11N52K3, STF11N52K3, STP11N52K3 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM09123v1 VSD (V) AM09122v1 BVDSS (norm) TJ=-50°C 0.9 TJ=25°C 0.8 1.10 0.7 TJ=150°C 0.6 1.05 0.5 1.00 0.4 0.3 0.95 0.2 0.1 0 0 1 3 2 4 5 ISD(A) 0.90 -75 Figure 16. Maximum avalanche energy vs starting Tj AM09124v1 EAS (mJ) ID=5 A VDD=50 V 180 160 140 120 100 80 60 40 20 0 0 8/20 20 40 60 80 100 120 140 TJ(°C) Doc ID 018868 Rev 2 -25 25 75 125 TJ(°C) STB11N52K3, STF11N52K3, STP11N52K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 018868 Rev 2 10% AM01473v1 9/20 Package mechanical data 4 STB11N52K3, STF11N52K3, STP11N52K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/20 Doc ID 018868 Rev 2 STB11N52K3, STF11N52K3, STP11N52K3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 018868 Rev 2 11/20 Package mechanical data STB11N52K3, STF11N52K3, STP11N52K3 Figure 23. TO-220FP drawing 7012510_Rev_K_B 12/20 Doc ID 018868 Rev 2 STB11N52K3, STF11N52K3, STP11N52K3 Table 10. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 018868 Rev 2 13/20 Package mechanical data STB11N52K3, STF11N52K3, STP11N52K3 Figure 24. TO-220 type A drawing 0015988_typeA_Rev_S 14/20 Doc ID 018868 Rev 2 STB11N52K3, STF11N52K3, STP11N52K3 Table 11. Package mechanical data D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 018868 Rev 2 15/20 Package mechanical data STB11N52K3, STF11N52K3, STP11N52K3 Figure 25. D²PAK (TO-263) drawing 0079457_T Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 16/20 Doc ID 018868 Rev 2 Footprint STB11N52K3, STF11N52K3, STP11N52K3 5 Package mechanical data Package mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 018868 Rev 2 Max. 330 13.2 26.4 30.4 17/20 Package mechanical data STB11N52K3, STF11N52K3, STP11N52K3 Figure 27. Tape for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 28. Reel for D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 Doc ID 018868 Rev 2 STB11N52K3, STF11N52K3, STP11N52K3 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 20-May-2011 1 First release. 27-Mar-2012 2 Inserted max and min. values for RG in Table 5. Updated Section 4: Package mechanical data. Doc ID 018868 Rev 2 19/20 STB11N52K3, STF11N52K3, STP11N52K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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