STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK Datasheet — production data Features TAB Type VDSS RDS(on)max. ID PW STD6N95K5 9A 90 W STF6N95K5 9A 25 W STP6N95K5 950 V DPAK 3 1 2 TO-220FP < 1.25 Ω STW6N95K5 3 1 TAB 9A 90 W TAB STU6N95K5 ■ ■ 3 DPAK 950 V worldwide best RDS(on) 3 1 Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zener-protected 2 1 1 IPAK Internal schematic diagram Applications ■ 2 3 TO-247 TO-220 Figure 1. 2 D(2,TAB) Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table 1. S(3) AM01476v1 Device summary Order codes Package Packaging STD6N95K5 DPAK Tape and reel STF6N95K5 TO-220FP STP6N95K5 Marking 6N95K5 TO-220 Tube STW6N95K5 TO-247 STU6N95K5 IPAK August 2012 This is information on a product in full production. Doc ID 16958 Rev 3 1/23 www.st.com 23 Contents STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit TO-220, DPAK TO-247, IPAK Gate- source voltage TO-220FP ± 30 Drain current (continuous) at TC = 25 °C 9 V 9 (1) A (1) A Drain current (continuous) at TC = 100 °C 6 6 IDM (2) Drain current (pulsed) 36 36 (1) A PTOT Total dissipation at TC = 25 °C 90 25 W IAR (3) Max current during repetitive or single pulse avalanche 3 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 90 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (4) Tj Tstg 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 4.5 V/ns - 55 to 150 °C 1. Limited by package. 2. Pulse width limited by safe operating area. 3. Pulse width limited by TJmax. 4. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VPeak ≤V(BR)DSS Table 3. Thermal data Value Symbol Parameter TO-220 IPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb (1) Thermal resistance junction-pcb max Unit DPAK TO-247 TO-220FP 1.39 62.5 50 50 5 °C/W 62.5 °C/W °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 16958 Rev 3 3/23 Electrical characteristics 2 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 950 V VDS = 950 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 3 A 1 1.25 Ω Typ. Max. Unit V(BR)DSS Table 5. Symbol 950 3 V Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. 450 VDS =100 V, f=1 MHz, VGS=0 - 30 pF - 1.6 Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 6 A VGS =10 V (see Figure 20) pF pF - 45 - pF - 19 - pF - 7 - Ω - 13 3 7 - nC nC nC VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 475 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 22) Electrical characteristics Min. Typ. Max. Unit - 12 12 33 21 - ns ns ns ns Min. Typ. Max. Unit - 9 36 A A 1.6 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 6 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 6 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 21) - 372 4 22 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 6 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 21) - 522 5 20 ns µC A Min Typ. Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions V(BR)GSO Gate-source breakdown voltage Igs ± 1mA, ID= 0 30 Max. - Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 16958 Rev 3 5/23 Electrical characteristics STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM07106v1 ID (A) Tj=150°C Tc=25°C Single pulse D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10 1 10µs 100µs 1ms 0.1 0.01 0.1 Figure 4. 10ms 10 1 100 VDS(V) Safe operating area for TO-220 and Figure 5. TO-247 Thermal impedance for TO-220 and TO-247 AM07107v1 ID (A) Tj=150°C Tc=25°C Single pulse on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 100µs 1ms 10ms 0.1 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for DPAK and IPAK Figure 7. AM07105v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 ) on S( O Li per m at ite io d ni by n m this ax a R rea is 10µs 100µs D 1 1ms 10ms 0.1 0.01 0.1 6/23 1 10 100 VDS(V) Doc ID 16958 Rev 3 Thermal impedance for DPAK and IPAK STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Figure 8. Output characteristics Figure 9. AM07108v1 ID (A) VGS=10V Electrical characteristics Transfer characteristics AM07109v1 ID (A) VDS=15V 12 8 10 6 8 7V 6 4 4 6V 2 2 5V 0 0 5 10 15 20 0 0 VDS(V) 25 2 4 8 6 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM07110v1 VDS VGS (V) 12 VDS (V) 700 VDD=760V ID=6A 600 10 500 8 AM07111v1 RDS(on) (Ohm) 1.03 VGS=10V 1.01 0.99 0.97 400 6 300 4 2 0 0 2 4 6 8 10 12 14 0.95 0.93 200 0.91 100 0.89 0 Qg(nC) Figure 12. Capacitance variations 0.87 0.5 1.0 1.5 2.0 2.5 3.0 Figure 13. Output capacitance stored energy AM07112v1 C (pF) ID(A) AM07113v1 Eoss (µJ) 22 20 1000 18 1 Ciss 16 14 100 12 10 Coss 10 8 6 Crss 4 2 1 0.1 1 10 100 VDS(V) Doc ID 16958 Rev 3 0 0 100 200 300 400 500 600 700 800 900 VDS(V) 7/23 Electrical characteristics STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Figure 14. Normalized gate threshold voltage vs temperature AM07114v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM07115v1 RDS(on) (norm) 1.2 2.5 1.1 2.0 1.0 0.9 1.5 0.8 0.7 1.0 0.6 0.5 0.5 0.4 -75 25 -25 75 125 Figure 16. Source-drain diode forward characteristics 0.95 -25 25 75 125 TJ(°C) Figure 17. Normalized BVDSS vs temperature AM07118v1 VSD (V) 0 -75 TJ(°C) AM07116v1 BVDSS (norm) 1.2 TJ=-50°C 1.1 0.85 TJ=25°C 1.0 0.75 0.9 TJ=150°C 0.65 0.55 2.0 3.0 4.0 5.0 6.0 0.8 ISD(A) 0.7 -75 Figure 18. Maximum avalanche energy vs starting Tj AM07117v1 EAS (mJ) 100 ID=3 A VDD=50 V 90 80 70 60 50 40 30 20 10 0 0 8/23 20 40 60 80 100 120 140 TJ(°C) Doc ID 16958 Rev 3 -25 25 75 125 TJ(°C) STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16958 Rev 3 10% AM01473v1 9/23 Package mechanical data 4 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 9. DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 1 R V2 10/23 Max. 0.20 0° 8° Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data Figure 25. DPAK (TO-252) drawing 0068772_I Figure 26. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimensions are in millimeters Doc ID 16958 Rev 3 11/23 Package mechanical data Table 10. STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/23 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data Figure 27. TO-220FP drawing 7012510_Rev_K_B Doc ID 16958 Rev 3 13/23 Package mechanical data Table 11. STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/23 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 16958 Rev 3 15/23 Package mechanical data Table 12. STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/23 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 16958 Rev 3 5.70 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data Figure 29. TO-247 drawing 0075325_G Doc ID 16958 Rev 3 17/23 Package mechanical data Table 13. STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 IPAK (TO-251) mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 18/23 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° Doc ID 16958 Rev 3 1.00 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Package mechanical data Figure 30. IPAK (TO-251) drawing 0068771_J Doc ID 16958 Rev 3 19/23 Packaging mechanical data 5 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Packaging mechanical data Table 14. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 20/23 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 16958 Rev 3 18.4 22.4 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Packaging mechanical data Figure 31. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 32. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 16958 Rev 3 21/23 Revision history 6 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Revision history Table 15. Document revision history Date Revision 12-Jan-2010 1 First release. 01-Jul-2010 2 Document status promoted from preliminary data to datasheet. 3 Inserted new device in IPAK. Updated Table 1: Device summary, Table 2: Absolute maximum ratings, and Table 3: Thermal data. Updated Section 4: Package mechanical data and Section 5: Packaging mechanical data. Minor text changes in the cover page. 31-Aug-2012 22/23 Changes Doc ID 16958 Rev 3 STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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