STMICROELECTRONICS STU6N95K5

STD6N95K5, STF6N95K5,
STP6N95K5, STW6N95K5, STU6N95K5
N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH™ 5
Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
Datasheet — production data
Features
TAB
Type
VDSS RDS(on)max.
ID
PW
STD6N95K5
9A
90 W
STF6N95K5
9A
25 W
STP6N95K5
950 V
DPAK
3
1
2
TO-220FP
< 1.25 Ω
STW6N95K5
3
1
TAB
9A
90 W
TAB
STU6N95K5
■
■
3
DPAK 950 V worldwide best RDS(on)
3
1
Worldwide best FOM (figure of merit)
■
Ultra low gate charge
■
100% avalanche tested
■
Zener-protected
2
1
1
IPAK
Internal schematic diagram
Applications
■
2
3
TO-247
TO-220
Figure 1.
2
D(2,TAB)
Switching applications
Description
G(1)
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Table 1.
S(3)
AM01476v1
Device summary
Order codes
Package
Packaging
STD6N95K5
DPAK
Tape and reel
STF6N95K5
TO-220FP
STP6N95K5
Marking
6N95K5
TO-220
Tube
STW6N95K5
TO-247
STU6N95K5
IPAK
August 2012
This is information on a product in full production.
Doc ID 16958 Rev 3
1/23
www.st.com
23
Contents
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
.............................................. 9
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
VGS
ID
ID
Parameter
Unit
TO-220, DPAK
TO-247, IPAK
Gate- source voltage
TO-220FP
± 30
Drain current (continuous) at TC = 25 °C
9
V
9
(1)
A
(1)
A
Drain current (continuous) at TC = 100 °C
6
6
IDM (2)
Drain current (pulsed)
36
36 (1)
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
IAR (3)
Max current during repetitive or single
pulse avalanche
3
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
90
mJ
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
dv/dt (4)
Tj
Tstg
2500
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
V
4.5
V/ns
- 55 to 150
°C
1. Limited by package.
2. Pulse width limited by safe operating area.
3. Pulse width limited by TJmax.
4. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VPeak ≤V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
TO-220
IPAK
Rthj-case
Thermal resistance junction-case
max
Rthj-amb
Thermal resistance junction-amb
max
Rthj-pcb (1)
Thermal resistance junction-pcb
max
Unit
DPAK
TO-247 TO-220FP
1.39
62.5
50
50
5
°C/W
62.5
°C/W
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 16958 Rev 3
3/23
Electrical characteristics
2
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 950 V
VDS = 950 V, Tc=125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID= 3 A
1
1.25
Ω
Typ.
Max.
Unit
V(BR)DSS
Table 5.
Symbol
950
3
V
Dynamic
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
Min.
450
VDS =100 V, f=1 MHz, VGS=0
-
30
pF
-
1.6
Co(tr)(1)
Equivalent capacitance time
related
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
f = 1MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 760 V, ID = 6 A
VGS =10 V
(see Figure 20)
pF
pF
-
45
-
pF
-
19
-
pF
-
7
-
Ω
-
13
3
7
-
nC
nC
nC
VGS = 0, VDS = 0 to 760 V
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/23
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Table 6.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 7.
Symbol
ISD
ISDM
VSD(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
1.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 475 V, ID = 3 A,
RG=4.7 Ω, VGS=10 V
(see Figure 22)
Electrical characteristics
Min.
Typ.
Max.
Unit
-
12
12
33
21
-
ns
ns
ns
ns
Min.
Typ.
Max.
Unit
-
9
36
A
A
1.6
V
Source drain diode
Parameter
Test conditions
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 6 A, VGS=0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 6 A, VDD= 60 V
di/dt = 100 A/µs,
(see Figure 21)
-
372
4
22
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 6 A,VDD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 21)
-
522
5
20
ns
µC
A
Min
Typ.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source Zener diode
Parameter
Test conditions
V(BR)GSO Gate-source breakdown voltage Igs ± 1mA, ID= 0
30
Max.
-
Unit
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 16958 Rev 3
5/23
Electrical characteristics
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Figure 3.
Thermal impedance for TO-220FP
AM07106v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
10µs
100µs
1ms
0.1
0.01
0.1
Figure 4.
10ms
10
1
100
VDS(V)
Safe operating area for TO-220 and Figure 5.
TO-247
Thermal impedance for TO-220 and
TO-247
AM07107v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
0.1
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for DPAK and
IPAK
Figure 7.
AM07105v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
10
)
on
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10µs
100µs
D
1
1ms
10ms
0.1
0.01
0.1
6/23
1
10
100
VDS(V)
Doc ID 16958 Rev 3
Thermal impedance for DPAK and
IPAK
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Figure 8.
Output characteristics
Figure 9.
AM07108v1
ID (A)
VGS=10V
Electrical characteristics
Transfer characteristics
AM07109v1
ID
(A)
VDS=15V
12
8
10
6
8
7V
6
4
4
6V
2
2
5V
0
0
5
10
15
20
0
0
VDS(V)
25
2
4
8
6
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
AM07110v1
VDS
VGS
(V)
12
VDS
(V)
700
VDD=760V
ID=6A
600
10
500
8
AM07111v1
RDS(on)
(Ohm)
1.03
VGS=10V
1.01
0.99
0.97
400
6
300
4
2
0
0
2
4
6
8
10
12
14
0.95
0.93
200
0.91
100
0.89
0
Qg(nC)
Figure 12. Capacitance variations
0.87
0.5
1.0
1.5
2.0
2.5
3.0
Figure 13. Output capacitance stored energy
AM07112v1
C
(pF)
ID(A)
AM07113v1
Eoss (µJ)
22
20
1000
18
1
Ciss
16
14
100
12
10
Coss
10
8
6
Crss
4
2
1
0.1
1
10
100
VDS(V)
Doc ID 16958 Rev 3
0
0
100
200
300
400
500
600 700
800
900
VDS(V)
7/23
Electrical characteristics
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Figure 14. Normalized gate threshold voltage
vs temperature
AM07114v1
VGS(th)
(norm)
Figure 15. Normalized on-resistance vs
temperature
AM07115v1
RDS(on)
(norm)
1.2
2.5
1.1
2.0
1.0
0.9
1.5
0.8
0.7
1.0
0.6
0.5
0.5
0.4
-75
25
-25
75
125
Figure 16. Source-drain diode forward
characteristics
0.95
-25
25
75
125
TJ(°C)
Figure 17. Normalized BVDSS vs temperature
AM07118v1
VSD
(V)
0
-75
TJ(°C)
AM07116v1
BVDSS
(norm)
1.2
TJ=-50°C
1.1
0.85
TJ=25°C
1.0
0.75
0.9
TJ=150°C
0.65
0.55
2.0
3.0
4.0
5.0
6.0
0.8
ISD(A)
0.7
-75
Figure 18. Maximum avalanche energy vs
starting Tj
AM07117v1
EAS (mJ)
100
ID=3 A
VDD=50 V
90
80
70
60
50
40
30
20
10
0
0
8/23
20
40
60
80
100 120 140 TJ(°C)
Doc ID 16958 Rev 3
-25
25
75
125
TJ(°C)
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
AM01471v1
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 16958 Rev 3
10%
AM01473v1
9/23
Package mechanical data
4
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 9.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
0.80
L4
0.60
1
R
V2
10/23
Max.
0.20
0°
8°
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
Figure 25. DPAK (TO-252) drawing
0068772_I
Figure 26. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
AM08850v1
a. All dimensions are in millimeters
Doc ID 16958 Rev 3
11/23
Package mechanical data
Table 10.
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/23
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
Figure 27. TO-220FP drawing
7012510_Rev_K_B
Doc ID 16958 Rev 3
13/23
Package mechanical data
Table 11.
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/23
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 16958 Rev 3
15/23
Package mechanical data
Table 12.
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
16/23
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
Doc ID 16958 Rev 3
5.70
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
Figure 29. TO-247 drawing
0075325_G
Doc ID 16958 Rev 3
17/23
Package mechanical data
Table 13.
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
18/23
max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
Doc ID 16958 Rev 3
1.00
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Package mechanical data
Figure 30. IPAK (TO-251) drawing
0068771_J
Doc ID 16958 Rev 3
19/23
Packaging mechanical data
5
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Packaging mechanical data
Table 14.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
20/23
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 16958 Rev 3
18.4
22.4
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Packaging mechanical data
Figure 31. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 32. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 16958 Rev 3
21/23
Revision history
6
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
Revision history
Table 15.
Document revision history
Date
Revision
12-Jan-2010
1
First release.
01-Jul-2010
2
Document status promoted from preliminary data to datasheet.
3
Inserted new device in IPAK.
Updated Table 1: Device summary, Table 2: Absolute maximum
ratings, and Table 3: Thermal data.
Updated Section 4: Package mechanical data and Section 5:
Packaging mechanical data.
Minor text changes in the cover page.
31-Aug-2012
22/23
Changes
Doc ID 16958 Rev 3
STD6N95K5, STF6N95K5, STP6N95K5, STW6N95K5, STU6N95K5
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Doc ID 16958 Rev 3
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