STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 RDS(on) max. ID 3 1 3 1 710 V < 0.6 Ω ■ Worldwide best RDS(on) * area ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 7A 2 1 2 TO-220 TO-220FP 3 3 12 I²PAK Figure 1. 3 1 2 1 D²PAK IPAK Internal schematic diagram Applications ■ 3 DPAK $ Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 July 2011 3 !-V Marking Package Packaging 8N65M5 D²PAK DPAK TO-220FP I²PAK TO-220 IPAK Tape and reel Tape and reel Tube Tube Tube Tube Doc ID 16531 Rev 3 1/25 www.st.com 25 Contents STB/D/F/I/P/U8N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2/25 .............................................. 9 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID IDM (2) PTOT TO-220, D²PAK I²PAK Parameter Gate- source voltage Drain current (continuous) at TC = 25 °C 7 Drain current (continuous) at TC = 100 °C 28 Total dissipation at TC = 25 °C 70 EAS V (1) 7 4.4 Drain current (pulsed) Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) A 4.4 (1) A 28 (1) A 25 W 2 A Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 120 mJ Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj Unit TO-220FP ± 25 IAR dv/dt (3) IPAK DPAK, 2500 Max. operating junction temperature V -55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 7A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS. Table 3. Thermal data Symbol Parameter Value Unit DPAK IPAK TO-220 I²PAK D²PAK TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Tl 1.79 100 Thermal resistance junction-pcb max 62.5 50 Maximum lead temperature for soldering purpose 5 °C/W 62.5 °C/W 30 300 °C/W 300 °C 1. When mounted on 1 inch² FR-4 board, 2oz Cu. Doc ID 16531 Rev 3 3/25 Electrical characteristics 2 STB/D/F/I/P/U8N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.56 0.6 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance Table 5. Symbol 3 VGS = 10 V, ID = 3.5 A Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 690 18 2 - pF pF pF Co(er)(1) Equivalent output capacitance energy related VGS = 0, VDS = 0 to 520 V - 17 - pF Co(tr)(2) Equivalent output capacitance time related VGS = 0, VDS = 0 to 520 V - 52 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 2.4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 3.5 A, VGS = 10 V (see Figure 19) - 15 3.6 6 - nC nC nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Table 6. Symbol td(off) tr(V) tc(off) tf(i) Table 7. Electrical characteristics Switching times Parameter Test conditions Turn-off delay time Rise time Cross time Fall time VDD = 400 V, ID = 4A, RG = 4.7 Ω, VGS = 10 V (see Figure 20) (see Figure 23) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 50 14 20 11 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 7 28 A A ISD = 7 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) - 200 1.6 16 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 20) - 263 1.9 15 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16531 Rev 3 5/25 Electrical characteristics STB/D/F/I/P/U8N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, I²PAK, D²PAK Thermal impedance for TO-220, I²PAK, D²PAK AM08194v1 ID (A) on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 Figure 3. 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for DPAK, IPAK Figure 5. 10 10µs n) Thermal impedance for DPAK, IPAK D S( o O Li per m at ite io d ni by n m this ax a R rea is ID (A) AM08195v1 1 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Safe operating area for TO-220FP Figure 7. AM08196v1 ID (A) ) on D S( O Li per m at ite io d ni by n m this ax a R rea is 10 1 10µs 100µs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/25 1 10 100 VDS(V) Doc ID 16531 Rev 3 Thermal impedance for TO-220FP STB/D/F/I/P/U8N65M5 Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics AM08197v1 ID (A) 12 VGS=10V 7.5V AM08198v1 ID (A) 12 VDS=20V 7V 10 10 6.5V 8 8 6 6 6V 4 4 2 2 5.5V 0 0 5 10 5V VDS(V) 15 0 3 4 5 7 6 8 9 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM03195v1 VGS (V) 12 VGS VDD=520V ID=3.5A VDS VGS=10V 500 10 AM08200v1 RDS(on) (Ohm) 0.58 400 0.56 8 300 6 0.54 200 4 100 2 0 0 5 10 15 0 Qg(nC) Figure 12. Capacitance variations 0.50 2 0 4 6 ID(A) Figure 13. Output capacitance stored energy AM08202v1 C (pF) 0.52 AM08201v1 Eoss (µJ) 3.5 1000 Ciss 3.0 2.5 100 2.0 1.5 Coss 10 Crss 1 0.1 1 10 100 1.0 0.5 VDS(V) Doc ID 16531 Rev 3 0 0 100 200 300 400 500 600 VDS(V) 7/25 Electrical characteristics STB/D/F/I/P/U8N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM08204v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM08205v1 RDS(on) (norm) VGS=10V ID=3.5A 1.10 2.0 1.00 1.5 0.90 1.0 0.80 0.70 -50 -25 0 25 50 TJ(°C) 75 100 0.5 -50 -25 0 25 75 100 50 TJ(°C) Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature (1) AM08206v1 E (μJ) AM08203v1 BVDSS (norm) ID=4A VCL=400V VGS=10V ID=1mA 1.07 Eoff 1.05 100 Eon 1.03 1.01 0.99 10 0.97 0.95 1 0 10 20 30 40 RG(Ω) 0.93 -50 -25 1. Eon including reverse recovery of a SiC diode 8/25 Doc ID 16531 Rev 3 0 25 50 75 100 TJ(°C) STB/D/F/I/P/U8N65M5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 23. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 16531 Rev 3 Tfall Tcross --over AM05540v1 9/25 Package mechanical data 4 STB/D/F/I/P/U8N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Table 8. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing mechanical data L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16531 Rev 3 11/25 Package mechanical data Table 9. STB/D/F/I/P/U8N65M5 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 12/25 Max. 0.4 0° 8° Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Package mechanical data Figure 25. D²PAK (TO-263) drawing 0079457_S Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 16531 Rev 3 13/25 Package mechanical data Table 10. STB/D/F/I/P/U8N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 27. I²PAK (TO-262) drawing 0004982_Rev_H 14/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16531 Rev 3 15/25 Package mechanical data STB/D/F/I/P/U8N65M5 Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S 16/25 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Table 12. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 0.20 0° 8° Doc ID 16531 Rev 3 17/25 Package mechanical data STB/D/F/I/P/U8N65M5 Figure 29. DPAK (TO-252) drawing 0068772_H Figure 30. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 b. All dimension are in millimeters 18/25 Doc ID 16531 Rev 3 AM08850v1 STB/D/F/I/P/U8N65M5 Table 13. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 16531 Rev 3 1.00 19/25 Package mechanical data STB/D/F/I/P/U8N65M5 Figure 31. IPAK (TO-251) drawing 0068771_H 20/25 AM09214V1 Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 5 Packaging mechanical data Packaging mechanical data Table 14. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 16531 Rev 3 Min. Max. 330 13.2 26.4 30.4 21/25 Packaging mechanical data Table 15. STB/D/F/I/P/U8N65M5 DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 22/25 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 16531 Rev 3 18.4 22.4 STB/D/F/I/P/U8N65M5 Packaging mechanical data Figure 32. Tape for DPAK and D²PAK 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 33. Reel for DPAK and D²PAK T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 16531 Rev 3 23/25 Revision history 6 STB/D/F/I/P/U8N65M5 Revision history Table 16. 24/25 Document revision history Date Revision Changes 23-Oct-2009 1 First release 14-Oct-2010 2 Document status promoted from preliminary data to datasheet. 05-Jul-2011 3 Table 7: Source drain diode has been updated. Doc ID 16531 Rev 3 STB/D/F/I/P/U8N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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