STMICROELECTRONICS STD8N65M5

STB8N65M5, STD8N65M5, STF8N65M5
STI8N65M5, STP8N65M5, STU8N65M5
N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET
in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK
Features
Type
VDSS @ TJmax
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
RDS(on) max.
ID
3
1
3
1
710 V
< 0.6 Ω
■
Worldwide best RDS(on) * area
■
Higher VDSS rating
■
High dv/dt capability
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
7A
2
1
2
TO-220
TO-220FP
3
3
12
I²PAK
Figure 1.
3
1
2
1
D²PAK
IPAK
Internal schematic diagram
Applications
■
3
DPAK
$
Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
Device summary
Order codes
STB8N65M5
STD8N65M5
STF8N65M5
STI8N65M5
STP8N65M5
STU8N65M5
July 2011
3
!-V
Marking
Package
Packaging
8N65M5
D²PAK
DPAK
TO-220FP
I²PAK
TO-220
IPAK
Tape and reel
Tape and reel
Tube
Tube
Tube
Tube
Doc ID 16531 Rev 3
1/25
www.st.com
25
Contents
STB/D/F/I/P/U8N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
2/25
.............................................. 9
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
VGS
ID
ID
IDM
(2)
PTOT
TO-220,
D²PAK
I²PAK
Parameter
Gate- source voltage
Drain current (continuous) at TC = 25 °C
7
Drain current (continuous) at TC = 100 °C
28
Total dissipation at TC = 25 °C
70
EAS
V
(1)
7
4.4
Drain current (pulsed)
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
A
4.4
(1)
A
28
(1)
A
25
W
2
A
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
120
mJ
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
Unit
TO-220FP
± 25
IAR
dv/dt (3)
IPAK
DPAK,
2500
Max. operating junction temperature
V
-55 to 150
°C
150
°C
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤ 7A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK IPAK TO-220 I²PAK D²PAK TO-220FP
Rthj-case
Thermal resistance
junction-case max
Rthj-amb
Thermal resistance
junction-ambient max
Rthj-pcb(1)
Tl
1.79
100
Thermal resistance
junction-pcb max
62.5
50
Maximum lead
temperature for soldering
purpose
5
°C/W
62.5
°C/W
30
300
°C/W
300
°C
1. When mounted on 1 inch² FR-4 board, 2oz Cu.
Doc ID 16531 Rev 3
3/25
Electrical characteristics
2
STB/D/F/I/P/U8N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
650
V
IDSS
VDS = Max rating
Zero gate voltage
drain current (VGS = 0) VDS = Max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
4
5
V
0.56
0.6
Ω
Min.
Typ.
Max.
Unit
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on
Static drain-source on
resistance
Table 5.
Symbol
3
VGS = 10 V, ID = 3.5 A
Dynamic
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
690
18
2
-
pF
pF
pF
Co(er)(1)
Equivalent output
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
17
-
pF
Co(tr)(2)
Equivalent output
capacitance time
related
VGS = 0, VDS = 0 to 520 V
-
52
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 3.5 A,
VGS = 10 V
(see Figure 19)
-
15
3.6
6
-
nC
nC
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/25
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
Table 6.
Symbol
td(off)
tr(V)
tc(off)
tf(i)
Table 7.
Electrical characteristics
Switching times
Parameter
Test conditions
Turn-off delay time
Rise time
Cross time
Fall time
VDD = 400 V, ID = 4A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
(see Figure 23)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
50
14
20
11
Min.
Typ.
Max. Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
7
28
A
A
ISD = 7 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
-
200
1.6
16
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
-
263
1.9
15
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16531 Rev 3
5/25
Electrical characteristics
STB/D/F/I/P/U8N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
I²PAK, D²PAK
Thermal impedance for TO-220,
I²PAK, D²PAK
AM08194v1
ID
(A)
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
Figure 3.
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for DPAK, IPAK Figure 5.
10
10µs
n)
Thermal impedance for DPAK, IPAK
D
S(
o
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
AM08195v1
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 6.
10
1
100
VDS(V)
Safe operating area for TO-220FP
Figure 7.
AM08196v1
ID
(A)
)
on
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
6/25
1
10
100
VDS(V)
Doc ID 16531 Rev 3
Thermal impedance for TO-220FP
STB/D/F/I/P/U8N65M5
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
Transfer characteristics
AM08197v1
ID (A)
12
VGS=10V
7.5V
AM08198v1
ID (A)
12
VDS=20V
7V
10
10
6.5V
8
8
6
6
6V
4
4
2
2
5.5V
0
0
5
10
5V
VDS(V)
15
0
3
4
5
7
6
8
9
VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM03195v1
VGS
(V)
12
VGS
VDD=520V
ID=3.5A
VDS
VGS=10V
500
10
AM08200v1
RDS(on)
(Ohm)
0.58
400
0.56
8
300
6
0.54
200
4
100
2
0
0
5
10
15
0
Qg(nC)
Figure 12. Capacitance variations
0.50
2
0
4
6
ID(A)
Figure 13. Output capacitance stored energy
AM08202v1
C
(pF)
0.52
AM08201v1
Eoss
(µJ)
3.5
1000
Ciss
3.0
2.5
100
2.0
1.5
Coss
10
Crss
1
0.1
1
10
100
1.0
0.5
VDS(V)
Doc ID 16531 Rev 3
0
0
100
200 300
400 500 600
VDS(V)
7/25
Electrical characteristics
STB/D/F/I/P/U8N65M5
Figure 14. Normalized gate threshold voltage
vs temperature
AM08204v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM08205v1
RDS(on)
(norm)
VGS=10V
ID=3.5A
1.10
2.0
1.00
1.5
0.90
1.0
0.80
0.70
-50 -25
0
25
50
TJ(°C)
75 100
0.5
-50 -25
0
25
75 100
50
TJ(°C)
Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature
(1)
AM08206v1
E
(μJ)
AM08203v1
BVDSS
(norm)
ID=4A
VCL=400V
VGS=10V
ID=1mA
1.07
Eoff
1.05
100
Eon
1.03
1.01
0.99
10
0.97
0.95
1
0
10
20
30
40
RG(Ω)
0.93
-50 -25
1. Eon including reverse recovery of a SiC diode
8/25
Doc ID 16531 Rev 3
0
25
50
75 100
TJ(°C)
STB/D/F/I/P/U8N65M5
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
Figure 21. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 22. Unclamped inductive waveform
V(BR)DSS
AM01471v1
Figure 23. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay-off
-off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t))
))
VDD
VDD
10%Id
10%Vds
Vds
Trise
AM01472v1
Doc ID 16531 Rev 3
Tfall
Tcross --over
AM05540v1
9/25
Package mechanical data
4
STB/D/F/I/P/U8N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/25
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
Table 8.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 24. TO-220FP drawing mechanical data
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 16531 Rev 3
11/25
Package mechanical data
Table 9.
STB/D/F/I/P/U8N65M5
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
12/25
Max.
0.4
0°
8°
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
Package mechanical data
Figure 25. D²PAK (TO-263) drawing
0079457_S
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimension are in millimeters
Doc ID 16531 Rev 3
13/25
Package mechanical data
Table 10.
STB/D/F/I/P/U8N65M5
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 27. I²PAK (TO-262) drawing
0004982_Rev_H
14/25
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
Table 11.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 16531 Rev 3
15/25
Package mechanical data
STB/D/F/I/P/U8N65M5
Figure 28. TO-220 type A drawing
0015988_typeA_Rev_S
16/25
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
Table 12.
Package mechanical data
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
1
R
V2
0.20
0°
8°
Doc ID 16531 Rev 3
17/25
Package mechanical data
STB/D/F/I/P/U8N65M5
Figure 29. DPAK (TO-252) drawing
0068772_H
Figure 30. DPAK footprint(b)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
b. All dimension are in millimeters
18/25
Doc ID 16531 Rev 3
AM08850v1
STB/D/F/I/P/U8N65M5
Table 13.
Package mechanical data
IPAK (TO-251) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
5.40
0.3
B5
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
o
10
Doc ID 16531 Rev 3
1.00
19/25
Package mechanical data
STB/D/F/I/P/U8N65M5
Figure 31. IPAK (TO-251) drawing
0068771_H
20/25
AM09214V1
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
5
Packaging mechanical data
Packaging mechanical data
Table 14.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 16531 Rev 3
Min.
Max.
330
13.2
26.4
30.4
21/25
Packaging mechanical data
Table 15.
STB/D/F/I/P/U8N65M5
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
22/25
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 16531 Rev 3
18.4
22.4
STB/D/F/I/P/U8N65M5
Packaging mechanical data
Figure 32. Tape for DPAK and D²PAK
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 33. Reel for DPAK and D²PAK
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 16531 Rev 3
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Revision history
6
STB/D/F/I/P/U8N65M5
Revision history
Table 16.
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Document revision history
Date
Revision
Changes
23-Oct-2009
1
First release
14-Oct-2010
2
Document status promoted from preliminary data to datasheet.
05-Jul-2011
3
Table 7: Source drain diode has been updated.
Doc ID 16531 Rev 3
STB/D/F/I/P/U8N65M5
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