STD5N95K5, STF5N95K5, STP5N95K5 N-channel 950 V, 2 Ω typ., 3.5 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet − production data Features TAB 3 Order codes 1 VDS RDS(on) max ID PTOT STD5N95K5 DPAK STF5N95K5 TAB 70 W 950 V 2.5 Ω 3.5 A 25 W STP5N95K5 70 W • TO-220 worldwide best RDS(on) • Worldwide best FOM (figure of merit) 3 3 2 1 1 TO-220FP 2 • Ultra low gate charge • 100% avalanche tested TO-220 • Zener-protected Figure 1. Internal schematic diagram Applications '7$% • Switching applications Description * 6 AM01476v1 These N-channel Zener-protected Power MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD5N95K5 STF5N95K5 5N95K5 TO-220FP Tube STP5N95K5 September 2013 This is information on a product in full production. TO-220 DocID024639 Rev 3 1/19 www.st.com 19 Contents STD5N95K5, STF5N95K5, STP5N95K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-220 VGS Gate- source voltage TO-220FP 30 V (1) A A ID Drain current (continuous) at TC = 25 °C 3.5 3.5 ID Drain current (continuous) at TC = 100 °C 2.2 2.2(1) IDM (2) PTOT Drain current (pulsed) 14 Total dissipation at TC = 25 °C A 70 25 W IAR Max current during repetitive or single pulse avalanche 1 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 70 mJ Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns dv/dt (3) (4) dv/dt VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature 2500 - 55 to 150 V °C 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 3.5 A, di/dt ≤ 100 A/μs, VDSPeak ≤ V(BR)DSS 4. VSD ≤ 640 V Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID024639 Rev 3 Unit DPAK, TO-220 TO-220FP 1.47 5 62.5 °C/W °C/W 3/19 Electrical characteristics 2 STD5N95K5, STF5N95K5, STP5N95K5 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current VDS = 950 V, VGS = 0 VDS = 950 V, VGS = 0, TC=125 °C 1 50 μA μA IGSS Gate-body leakage current VGS = ± 20 V; VDS=0 10 μA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 μA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 1.5 A 2 2.5 Ω V(BR)DSS 950 3 V Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Test conditions Min. Typ. Max. Unit - 220 - pF - 17 - pF - 1 - pF - 30 - pF - 11 - pF VDS =100 V, f=1 MHz, VGS=0 Equivalent capacitance time related VGS = 0, VDS = 0 to 760 V Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain - 17 - Ω Qg Total gate charge - 12.5 - nC Qgs Gate-source charge - 2 - nC Qgd Gate-drain charge VDD = 760 V, ID = 3.5 A VGS =10 V (see Figure 19) - 10 - nC 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/19 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. Max Unit - 12 - ns - 16 - ns - 32 - ns - 25 - ns Min. Typ. Max Unit Turn-on delay time VDD = 475 V, ID = 1.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Rise time td(off) Min. Turn-off-delay time Fall time Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Source-drain current - 3.5 A Source-drain current (pulsed) - 14 A 1.5 V Forward on voltage ISD = 3.5 A, VGS = 0 - trr Reverse recovery time - 330 ns Qrr Reverse recovery charge - 2.2 μC IRRM Reverse recovery current ISD = 3.5 A, di/dt = 100 A/μs VDD= 60 V (see Figure 20) - 13 A - 525 ns - 3.2 μC - 12 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 3.5 A, di/dt = 100 A/μs VDD= 60 V TJ = 150 °C (see Figure 20) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID024639 Rev 3 5/19 Electrical characteristics 2.1 STD5N95K5, STF5N95K5, STP5N95K5 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK AM16093v1 ID (A) 10 10µs Op Lim era ite tion d by in t m his ax a RD rea S( on is 100µs ) 1 Figure 3. Thermal impedance for DPAK 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM16094v1 ID (A) 10 ) Op Lim era ite tion d by in t m his ax a RD rea S( on is 10µs 1 100µs 1ms 0.1 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 AM16095v1 ID (A) 10 Op Lim era ite tion d by in t m his ax a RD rea S( on is 10µs 100µs ) 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/19 1 10 100 VDS(V) DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics GIPD170920131400FSR ID (A) 7 GIPD170920131419FSR ID (A) 6 VGS= 11V 6 5 10V 5 9V 4 8V 3 VDS= 20V 4 3 2 2 7V 1 1 6V 0 0 5 0 20 VDS(V) 15 10 5 Figure 10. Gate charge vs gate-source voltage GIPD170920131429FSR VDS VGS (V) (V) 700 VDD = 760 V ID = 3.5 A 12 600 10 500 8 6 8 7 9 10 VGS(V) Figure 11. Static drain-source on-resistance RDS(on) (Ω) 4 GIPD170920131442FSR VGS= 10V 3.5 3 2.5 400 2 6 300 4 2 0 0 2 4 6 8 10 12 1 100 0.5 0 Qg(nC) Figure 12. Capacitance variations 0 0.5 1 1.5 2 2.5 ID(A) Figure 13. Output capacitance stored energy GIPD170920131458FSR C (pF) 1.5 200 GIPD170920131505FSR Eoss (μJ) 1000 Ciss 4 100 10 Coss 2 Crss 1 0.1 0.1 1 10 100 VDS(V) 0 0 DocID024639 Rev 3 200 400 600 800 VDS(V) 7/19 Electrical characteristics STD5N95K5, STF5N95K5, STP5N95K5 Figure 14. Normalized gate threshold voltage vs temperature GIPD170920131531FSR VGS(th) (norm) 1.2 ID= 100μA Figure 15. Normalized on-resistance vs temperature GIPD170920131536FSR RDS(on) (norm) 2.5 ID= 1.5A VGS= 10V 1.1 1 2 0.9 1.5 0.8 1 0.7 0.6 0.5 0.5 0.4 -100 -50 0 50 100 150 TJ(°C) Figure 16. Normalized V(BR)DSS vs temperature GIPD170920131545FSR V(BR)DSS (norm) 1.1 0 -100 -50 0 50 100 150 TJ(°C) Figure 17. Source-drain diode forward characteristics GIPD240920131326FSR VSD (V) 0.9 ID= 1mA TJ= -50°C 1.05 0.8 1 0.7 TJ= 25°C 0.95 0.6 0.9 0.85 -100 8/19 -50 0 50 100 150 TJ(°C) 0.5 0 DocID024639 Rev 3 TJ= 150°C 0.8 1.6 2.4 3.2 ISD(A) STD5N95K5, STF5N95K5, STP5N95K5 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024639 Rev 3 10% AM01473v1 9/19 Package mechanical data 4 STD5N95K5, STF5N95K5, STP5N95K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Package mechanical data Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 0.20 0° 8° DocID024639 Rev 3 11/19 Package mechanical data STD5N95K5, STF5N95K5, STP5N95K5 Figure 24. DPAK (TO-252) type A drawing 0068772_L_type_A 12/19 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Package mechanical data Figure 25. DPAK footprint (a) Footprint_REV_L a. All dimensions are in millimeters DocID024639 Rev 3 13/19 Package mechanical data STD5N95K5, STF5N95K5, STP5N95K5 Table 10. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/19 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Package mechanical data Figure 26. TO-220FP drawing 7012510_Rev_K_B DocID024639 Rev 3 15/19 Package mechanical data STD5N95K5, STF5N95K5, STP5N95K5 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Package mechanical data Figure 27. TO-220 type A drawing BW\SH$B5HYB7 DocID024639 Rev 3 17/19 Revision history 5 STD5N95K5, STF5N95K5, STP5N95K5 Revision history Table 12. Document revision history 18/19 Date Revision Changes 08-May-2013 1 First release. 18-Sep-2013 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). Updated DPAK mechanical data. 25-Sep-2013 3 Inserted Figure 17: Source-drain diode forward characteristics. DocID024639 Rev 3 STD5N95K5, STF5N95K5, STP5N95K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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