STP5N95K5 - STMicroelectronics

STD5N95K5, STF5N95K5,
STP5N95K5
N-channel 950 V, 2 Ω typ., 3.5 A Zener-protected SuperMESH™ 5
Power MOSFETs in DPAK, TO-220FP and TO-220 packages
Datasheet − production data
Features
TAB
3
Order codes
1
VDS
RDS(on) max
ID
PTOT
STD5N95K5
DPAK
STF5N95K5
TAB
70 W
950 V
2.5 Ω
3.5 A 25 W
STP5N95K5
70 W
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
3
3
2
1
1
TO-220FP
2
• Ultra low gate charge
• 100% avalanche tested
TO-220
• Zener-protected
Figure 1. Internal schematic diagram
Applications
'7$%
• Switching applications
Description
*
6
AM01476v1
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Table 1. Device summary
Order codes
Marking
Package
Packaging
DPAK
Tape and reel
STD5N95K5
STF5N95K5
5N95K5
TO-220FP
Tube
STP5N95K5
September 2013
This is information on a product in full production.
TO-220
DocID024639 Rev 3
1/19
www.st.com
19
Contents
STD5N95K5, STF5N95K5, STP5N95K5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK, TO-220
VGS
Gate- source voltage
TO-220FP
30
V
(1)
A
A
ID
Drain current (continuous) at TC = 25 °C
3.5
3.5
ID
Drain current (continuous) at TC = 100 °C
2.2
2.2(1)
IDM
(2)
PTOT
Drain current (pulsed)
14
Total dissipation at TC = 25 °C
A
70
25
W
IAR
Max current during repetitive or single
pulse avalanche
1
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
70
mJ
Peak diode recovery voltage slope
4.5
V/ns
MOSFET dv/dt ruggedness
50
V/ns
dv/dt (3)
(4)
dv/dt
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tj
Tstg
Operating junction temperature
Storage temperature
2500
- 55 to 150
V
°C
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 3.5 A, di/dt ≤ 100 A/μs, VDSPeak ≤ V(BR)DSS
4. VSD ≤ 640 V
Table 3. Thermal data
Value
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-ambient max
DocID024639 Rev 3
Unit
DPAK, TO-220
TO-220FP
1.47
5
62.5
°C/W
°C/W
3/19
Electrical characteristics
2
STD5N95K5, STF5N95K5, STP5N95K5
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
drain current
VDS = 950 V, VGS = 0
VDS = 950 V, VGS = 0,
TC=125 °C
1
50
μA
μA
IGSS
Gate-body leakage
current
VGS = ± 20 V; VDS=0
10
μA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 μA
4
5
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 1.5 A
2
2.5
Ω
V(BR)DSS
950
3
V
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Co(tr)(1)
Test conditions
Min.
Typ.
Max.
Unit
-
220
-
pF
-
17
-
pF
-
1
-
pF
-
30
-
pF
-
11
-
pF
VDS =100 V, f=1 MHz, VGS=0
Equivalent capacitance time
related
VGS = 0, VDS = 0 to 760 V
Co(er)(2)
Equivalent capacitance
energy related
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
17
-
Ω
Qg
Total gate charge
-
12.5
-
nC
Qgs
Gate-source charge
-
2
-
nC
Qgd
Gate-drain charge
VDD = 760 V, ID = 3.5 A
VGS =10 V
(see Figure 19)
-
10
-
nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/19
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Electrical characteristics
Table 6. Switching times
Symbol
td(on)
tr
Parameter
Test conditions
tf
Typ.
Max
Unit
-
12
-
ns
-
16
-
ns
-
32
-
ns
-
25
-
ns
Min.
Typ.
Max
Unit
Turn-on delay time
VDD = 475 V, ID = 1.75 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Rise time
td(off)
Min.
Turn-off-delay time
Fall time
Table 7. Source drain diode
Symbol
ISD
ISDM (1)
VSD
(2)
Parameter
Test conditions
Source-drain current
-
3.5
A
Source-drain current (pulsed)
-
14
A
1.5
V
Forward on voltage
ISD = 3.5 A, VGS = 0
-
trr
Reverse recovery time
-
330
ns
Qrr
Reverse recovery charge
-
2.2
μC
IRRM
Reverse recovery current
ISD = 3.5 A, di/dt = 100 A/μs
VDD= 60 V
(see Figure 20)
-
13
A
-
525
ns
-
3.2
μC
-
12
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 3.5 A, di/dt = 100 A/μs
VDD= 60 V TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
Min
Typ.
Max.
Unit
30
-
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024639 Rev 3
5/19
Electrical characteristics
2.1
STD5N95K5, STF5N95K5, STP5N95K5
Electrical characteristics (curves)
Figure 2. Safe operating area for DPAK
AM16093v1
ID
(A)
10
10µs
Op
Lim era
ite tion
d
by in t
m his
ax a
RD rea
S(
on is
100µs
)
1
Figure 3. Thermal impedance for DPAK
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM16094v1
ID
(A)
10
)
Op
Lim era
ite tion
d
by in t
m his
ax a
RD rea
S(
on is
10µs
1
100µs
1ms
0.1
10ms
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 6. Safe operating area for TO-220
Figure 7. Thermal impedance for TO-220
AM16095v1
ID
(A)
10
Op
Lim era
ite tion
d
by in t
m his
ax a
RD rea
S(
on is
10µs
100µs
)
1
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
6/19
1
10
100
VDS(V)
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
GIPD170920131400FSR
ID
(A)
7
GIPD170920131419FSR
ID
(A)
6
VGS= 11V
6
5
10V
5
9V
4
8V
3
VDS= 20V
4
3
2
2
7V
1
1
6V
0
0
5
0
20 VDS(V)
15
10
5
Figure 10. Gate charge vs gate-source voltage
GIPD170920131429FSR
VDS
VGS
(V)
(V)
700
VDD = 760 V
ID = 3.5 A
12
600
10
500
8
6
8
7
9
10 VGS(V)
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
4
GIPD170920131442FSR
VGS= 10V
3.5
3
2.5
400
2
6
300
4
2
0
0
2
4
6
8
10
12
1
100
0.5
0
Qg(nC)
Figure 12. Capacitance variations
0
0.5
1
1.5
2
2.5
ID(A)
Figure 13. Output capacitance stored energy
GIPD170920131458FSR
C
(pF)
1.5
200
GIPD170920131505FSR
Eoss
(μJ)
1000
Ciss
4
100
10
Coss
2
Crss
1
0.1
0.1
1
10
100
VDS(V)
0
0
DocID024639 Rev 3
200
400
600
800
VDS(V)
7/19
Electrical characteristics
STD5N95K5, STF5N95K5, STP5N95K5
Figure 14. Normalized gate threshold voltage vs
temperature
GIPD170920131531FSR
VGS(th)
(norm)
1.2
ID= 100μA
Figure 15. Normalized on-resistance vs
temperature
GIPD170920131536FSR
RDS(on)
(norm)
2.5
ID= 1.5A
VGS= 10V
1.1
1
2
0.9
1.5
0.8
1
0.7
0.6
0.5
0.5
0.4
-100
-50
0
50
100
150
TJ(°C)
Figure 16. Normalized V(BR)DSS vs temperature
GIPD170920131545FSR
V(BR)DSS
(norm)
1.1
0
-100
-50
0
50
100
150
TJ(°C)
Figure 17. Source-drain diode forward
characteristics
GIPD240920131326FSR
VSD
(V)
0.9
ID= 1mA
TJ= -50°C
1.05
0.8
1
0.7
TJ= 25°C
0.95
0.6
0.9
0.85
-100
8/19
-50
0
50
100
150
TJ(°C)
0.5
0
DocID024639 Rev 3
TJ= 150°C
0.8
1.6
2.4
3.2
ISD(A)
STD5N95K5, STF5N95K5, STP5N95K5
3
Test circuits
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 21. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID024639 Rev 3
10%
AM01473v1
9/19
Package mechanical data
4
STD5N95K5, STF5N95K5, STP5N95K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/19
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Package mechanical data
Table 9. DPAK (TO-252) type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
(L1)
2.80
L2
0.80
L4
0.60
1.00
R
V2
0.20
0°
8°
DocID024639 Rev 3
11/19
Package mechanical data
STD5N95K5, STF5N95K5, STP5N95K5
Figure 24. DPAK (TO-252) type A drawing
0068772_L_type_A
12/19
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Package mechanical data
Figure 25. DPAK footprint (a)
Footprint_REV_L
a. All dimensions are in millimeters
DocID024639 Rev 3
13/19
Package mechanical data
STD5N95K5, STF5N95K5, STP5N95K5
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
14/19
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Package mechanical data
Figure 26. TO-220FP drawing
7012510_Rev_K_B
DocID024639 Rev 3
15/19
Package mechanical data
STD5N95K5, STF5N95K5, STP5N95K5
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/19
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
Package mechanical data
Figure 27. TO-220 type A drawing
BW\SH$B5HYB7
DocID024639 Rev 3
17/19
Revision history
5
STD5N95K5, STF5N95K5, STP5N95K5
Revision history
Table 12. Document revision history
18/19
Date
Revision
Changes
08-May-2013
1
First release.
18-Sep-2013
2
Document status promoted from preliminary to production data.
Added Section 2.1: Electrical characteristics (curves).
Updated DPAK mechanical data.
25-Sep-2013
3
Inserted Figure 17: Source-drain diode forward characteristics.
DocID024639 Rev 3
STD5N95K5, STF5N95K5, STP5N95K5
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DocID024639 Rev 3
19/19