TSC BC807

BC807-16/-25/40
0.3 Walts, PNP Plastic-Encasulate Transistor
SOT-23
A
F
B
E
Features
—Ideally suited for automatic insertion
C
—Epitaxial planar die construction
G
D
—For switching, AF driver and amplifier applications
H
—Complementary NPN type available (BC817)
—Qualified to AEC-Q10 standards for high reliability
Unit (mm)
Dimensions
Unit (inch)
Min
Max
Min
Max
A
2.80
3.00
0.110
0.118
Mechanical Data
B
1.20
1.40
0.047
0.055
—Case : SOT- 23, Molded plastic
C
0.30
0.50
0.012
0.020
—Case material: Molded plastic. UL flammability
classification rating 94V-0
D
1.80
2.00
0.071
0.079
E
2.25
2.55
0.089
0.100
—Mosture sensitivity: Level 1 per J-STD-020C
F
0.90
1.20
0.035
0.047
—Terminals: Solderable per MIL-STD-202, Method 208
G
—Lead free plating
H
0.550 REF
0.08
0.19
0.022 REF
0.003
0.007
—Marking: -16: 5A, -25: 5B, -40: 5C
—Weight: 0.008 grams (approximate)
Ordering Information
Suggested PAD Layout
Packing
Part No.
Package Packing
Code
BC807-16/-25/-40
RF
SOT-23 3K / 7" Reel
BC807-16/-25/-40
RFG
SOT-23
0.95
0.037
3K / 7" Reel
2.0
0.079
0.9
0.035
0.8
0.031
Maximum Ratings
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Symbol
BC807-16
BC807-25
BC807-40
Units
Collector-Base Breakdown Voltage
IC= -10μA
IE=0
VCBO
-50
V
Collector-Emitter Breakdown Voltage
IC= -10mA
IB=0
VCEO
45
V
Collector current - continuous
IC
-0.5
A
Power dissipation
PD
0.3
W
IE= -1μA
IC=0
vEBO
-5
V
Collector Cut-off Current
VCB= -45V
IE=0
ICBO
-0.1
μA
Collector Cut-off Current
VCB= -40V
IB=0
ICEO
-0.2
μA
VEB= -4V
IC=0
IEBO
-0.1
μA
Collector-Emitter saturation voltage
IC= -500mA
IB=50mA
VCE(sat)
-0.7
V
Base-Emitter saturation voltage
IC= -500mA
IB=50mA
VBE(sat)
-1.2
V
IC= -10mA
f=100MHz
fT
100
MHz
TJ
150
°C
TSTG
-55 to + 150
Emitter-Base breakdown voltage
Emittor Cut-off Current
Transition frequency
VCE= -5V
Junction Temperature
Storage Temperature Range
Type Number
Symbol
807-16
DC current gain
807-25
807-40
VCE= -1V
IC= -100mA
hFE(1)
°C
Min
Max
100
250
160
400
250
600
Units
Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application.
Version : C10
RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40)
FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR
CURRENT
FIG.1- POWER DERATING CURVE
400
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
PD, POWER DISSIPATION (mW)
SEE NOTE1
300
200
100
0
0
50
100
150
TA= 25 OC
f = 20MHz
-VCE= 5.0V
1V
100
10 1
200
10
TSB, SUBSTRATE TEMPERATURE ( C)
FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT
1000
100
1000
- IC, COLLECTOR CURRENT (mA)
FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT
1000
150 0C
100
25 0C
O
-50 C
hFE, DC CURRENT GAIN
- IC, COLLECTOR CURRENT (mA)
- VCE= 1V
O
25 C
10
TYPICAL
LIMITS
O
at TA = 25 C
O
150 C
-IC / -IB = 10
-50 0C
100
1
0.1
0
500
0.1
0.2
0.3
0.4
- VCESAT, COLLECTOR SATURATION VOLTAGE (V)
10
0.1
0.5
FIG.5- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
3.2
1
10
100
- IC, COLLECTOR CURRENT (mA)
1000
FIG.6- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
100
2.8
0.4
2.4
0.35
2.0
80
- IC, COLLECTOR CURRENT (mA)
- IC, COLLECTOR CURRENT (mA)
400
1.8
1.6
300
1.4
1.2
1.0
200
0.8
0.6
100
0.3
0.25
60
0.2
40
0.15
20
0.4
0.1
-I B = 0 .05 mA
-I B = 0.2 mA
0
0
0
1
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
2
0
10
20
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
Version:C10