BC807-16/-25/40 0.3 Walts, PNP Plastic-Encasulate Transistor SOT-23 A F B E Features Ideally suited for automatic insertion C Epitaxial planar die construction G D For switching, AF driver and amplifier applications H Complementary NPN type available (BC817) Qualified to AEC-Q10 standards for high reliability Unit (mm) Dimensions Unit (inch) Min Max Min Max A 2.80 3.00 0.110 0.118 Mechanical Data B 1.20 1.40 0.047 0.055 Case : SOT- 23, Molded plastic C 0.30 0.50 0.012 0.020 Case material: Molded plastic. UL flammability classification rating 94V-0 D 1.80 2.00 0.071 0.079 E 2.25 2.55 0.089 0.100 Mosture sensitivity: Level 1 per J-STD-020C F 0.90 1.20 0.035 0.047 Terminals: Solderable per MIL-STD-202, Method 208 G Lead free plating H 0.550 REF 0.08 0.19 0.022 REF 0.003 0.007 Marking: -16: 5A, -25: 5B, -40: 5C Weight: 0.008 grams (approximate) Ordering Information Suggested PAD Layout Packing Part No. Package Packing Code BC807-16/-25/-40 RF SOT-23 3K / 7" Reel BC807-16/-25/-40 RFG SOT-23 0.95 0.037 3K / 7" Reel 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. Type Number Symbol BC807-16 BC807-25 BC807-40 Units Collector-Base Breakdown Voltage IC= -10μA IE=0 VCBO -50 V Collector-Emitter Breakdown Voltage IC= -10mA IB=0 VCEO 45 V Collector current - continuous IC -0.5 A Power dissipation PD 0.3 W IE= -1μA IC=0 vEBO -5 V Collector Cut-off Current VCB= -45V IE=0 ICBO -0.1 μA Collector Cut-off Current VCB= -40V IB=0 ICEO -0.2 μA VEB= -4V IC=0 IEBO -0.1 μA Collector-Emitter saturation voltage IC= -500mA IB=50mA VCE(sat) -0.7 V Base-Emitter saturation voltage IC= -500mA IB=50mA VBE(sat) -1.2 V IC= -10mA f=100MHz fT 100 MHz TJ 150 °C TSTG -55 to + 150 Emitter-Base breakdown voltage Emittor Cut-off Current Transition frequency VCE= -5V Junction Temperature Storage Temperature Range Type Number Symbol 807-16 DC current gain 807-25 807-40 VCE= -1V IC= -100mA hFE(1) °C Min Max 100 250 160 400 250 600 Units Notes: 1.The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Version : C10 RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40) FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR CURRENT FIG.1- POWER DERATING CURVE 400 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) PD, POWER DISSIPATION (mW) SEE NOTE1 300 200 100 0 0 50 100 150 TA= 25 OC f = 20MHz -VCE= 5.0V 1V 100 10 1 200 10 TSB, SUBSTRATE TEMPERATURE ( C) FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT 1000 100 1000 - IC, COLLECTOR CURRENT (mA) FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT 1000 150 0C 100 25 0C O -50 C hFE, DC CURRENT GAIN - IC, COLLECTOR CURRENT (mA) - VCE= 1V O 25 C 10 TYPICAL LIMITS O at TA = 25 C O 150 C -IC / -IB = 10 -50 0C 100 1 0.1 0 500 0.1 0.2 0.3 0.4 - VCESAT, COLLECTOR SATURATION VOLTAGE (V) 10 0.1 0.5 FIG.5- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 3.2 1 10 100 - IC, COLLECTOR CURRENT (mA) 1000 FIG.6- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 100 2.8 0.4 2.4 0.35 2.0 80 - IC, COLLECTOR CURRENT (mA) - IC, COLLECTOR CURRENT (mA) 400 1.8 1.6 300 1.4 1.2 1.0 200 0.8 0.6 100 0.3 0.25 60 0.2 40 0.15 20 0.4 0.1 -I B = 0 .05 mA -I B = 0.2 mA 0 0 0 1 - VCE, COLLECTOR-EMITTER VOLTAGE (V) 2 0 10 20 - VCE, COLLECTOR-EMITTER VOLTAGE (V) Version:C10