SECOS BC807-16

BC807-16, -25, -40
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen-free & RoHS compliant
FEATURES
z
z
z
Ideally suited for automatic insertion
Epitaxial planar die construction
Complementary to BC817 (NPN Type)
SOT-23
3 Collector
1
Base
2
Emitter
A
MARKING
L
BC807-16:5A;
K
3
B S
Top View
BC807-25:5B;
1
BC807-40:5C
J
2
V
G
C
H
D
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Symbol
Ratings
Unit
Collector to Base Voltage
Parameter
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Collector Power Dissipation
PC
300
mW
TJ, TSTG
+150, -55 ~ +150
ā„ƒ
Junction, Storage Temperature
CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Max.
Unit
BVCBO
-50
-
V
IC = -10 uA, IE = 0
BVCEO
-45
-
V
IC = -10 mA, IB = 0
BVEBO
-5
-
V
IE = -1 uA, IC = 0
ICBO
-
-0.1
uA
VCB = -45V, IE = 0
ICEO
-
-0.2
uA
VCE = -40V, IB = 0
IEBO
-
-0.1
uA
VEB = -4V, IC = 0
VCE(sat)
-
-0.7
V
IC = -500mA, IB = -50 mA
VBE(sat)
-
-1.2
V
IC = -500mA, IB = -50 mA
100
160
250
250
400
600
100
-
hFE(1)
807-16
807-25
807-40
fT
01-June-2002 Rev. B
Test Conditions
VCE = -1 V, IC = -100 mA
MHz
VCE = -5 V, IC = -10 mA, f = 100MHz
Page 1 of 2
BC807-16, -25, -40
Elektronische Bauelemente
-500 mA, -50 V
PNP Plastic Encapsulate Transistor
CHARACTERISTIC CURVES
01-June-2002 Rev. B
Page 2 of 2