TSC BC807-40

Pb
BC807-16
BC807-25
BC807-40
RoHS
COMPLIANCE
0.3 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
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Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary NPN type available(BC817)
Qualified to AEC-Q101 standards for high
reliability
Mechanical Data
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Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Marking: -16:5A, -25: 5B, -40: 5C
Weight: 0.008 grams(approximate)
Dimensions in inches and (millimeters)
Maximum Ratings
Type Number
o
TA=25 C unless otherwise specified
Symbol
Collector-base breakdown voltage
IC=-10uA, IE=0
Collector-emitter breakdown voltage IC=-10mA, IB=0
Collector current - continuous
Power dissipation
Emitter-base breakdown voltage
IE=-1uA, IC=0
Collector cut-off current
VCB=-45V IE=0
Collector cut-off current
VCE=-40V IB=0
Emitter cut-off current
VEB=-4V IC=0
Collector-emitter saturation voltage IC=-500mA, IB=-50mA
Base-emitter saturation voltage
IC=-500mA, IB=-50mA
Transition frequency VCE=-5V IC=-10mA f=100MHz
Operating and Storage Temperature Range
Type Number
DC current gain
807-16
807-25
807-40
VCBO
VCEO
IC
PC
VEBO
ICBO
ICEO
IEBO
VCE(sat)
VBE(sat)
fT
TJ, TSTG
Symbol
HFE(1)
VCE=-1V IC=-100mA
BC807
-16
BC807 BC807
-25
-40
-50
-45
-0.5
0.3
-5
-0.1
-0.2
-0.1
-0.7
-1.2
100
-55 to + 150
Min
Max
100
160
250
250
400
600
Version: B07
Units
V
V
A
W
V
uA
uA
uA
V
V
MHz
o
C
Units
RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40)
FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR
CURRENT
FIG.1- POWER DERATING CURVE
400
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
PD, POWER DISSIPATION (mW)
SEE NOTE1
300
200
100
0
0
50
100
150
TA= 25 OC
f = 20MHz
-VCE= 5.0V
1V
100
10 1
200
10
TSB, SUBSTRATE TEMPERATURE ( C)
FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT
1000
100
1000
- IC, COLLECTOR CURRENT (mA)
FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT
1000
150 0C
100
25 0C
O
-50 C
hFE, DC CURRENT GAIN
- IC, COLLECTOR CURRENT (mA)
- VCE= 1V
O
25 C
10
TYPICAL
LIMITS
O
at TA = 25 C
O
150 C
-IC / -IB = 10
-50 0C
100
1
0.1
0
500
0.1
0.2
0.3
0.4
- VCESAT, COLLECTOR SATURATION VOLTAGE (V)
10
0.1
0.5
FIG.5- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
3.2
1
10
100
- IC, COLLECTOR CURRENT (mA)
1000
FIG.6- TYPICAL EMITTER-COLLECTOR
CHARACTERISTICS
100
2.8
0.4
2.4
0.35
2.0
80
- IC, COLLECTOR CURRENT (mA)
- IC, COLLECTOR CURRENT (mA)
400
1.8
1.6
300
1.4
1.2
1.0
200
0.8
0.6
100
0.3
0.25
60
0.2
40
0.15
20
0.4
0.1
-I B = 0 .05 mA
-I B = 0.2 mA
0
0
0
1
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
2
0
10
20
- VCE, COLLECTOR-EMITTER VOLTAGE (V)
Version:B07