Pb BC807-16 BC807-25 BC807-40 RoHS COMPLIANCE 0.3 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features Ideally suited for automatic insertion Epitaxial planar die construction For switching, AF driver and amplifier applications Complementary NPN type available(BC817) Qualified to AEC-Q101 standards for high reliability Mechanical Data Case: SOT-23, Molded plastic Case material: molded plastic. UL flammability classification rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIIL-STD-202, Method 208 Lead free plating Marking: -16:5A, -25: 5B, -40: 5C Weight: 0.008 grams(approximate) Dimensions in inches and (millimeters) Maximum Ratings Type Number o TA=25 C unless otherwise specified Symbol Collector-base breakdown voltage IC=-10uA, IE=0 Collector-emitter breakdown voltage IC=-10mA, IB=0 Collector current - continuous Power dissipation Emitter-base breakdown voltage IE=-1uA, IC=0 Collector cut-off current VCB=-45V IE=0 Collector cut-off current VCE=-40V IB=0 Emitter cut-off current VEB=-4V IC=0 Collector-emitter saturation voltage IC=-500mA, IB=-50mA Base-emitter saturation voltage IC=-500mA, IB=-50mA Transition frequency VCE=-5V IC=-10mA f=100MHz Operating and Storage Temperature Range Type Number DC current gain 807-16 807-25 807-40 VCBO VCEO IC PC VEBO ICBO ICEO IEBO VCE(sat) VBE(sat) fT TJ, TSTG Symbol HFE(1) VCE=-1V IC=-100mA BC807 -16 BC807 BC807 -25 -40 -50 -45 -0.5 0.3 -5 -0.1 -0.2 -0.1 -0.7 -1.2 100 -55 to + 150 Min Max 100 160 250 250 400 600 Version: B07 Units V V A W V uA uA uA V V MHz o C Units RATINGS AND CHARACTERISTIC CURVES(BC807-16, BC807-25, BC807-40) FIG.2- GAIN BANDWIDTH PRODUCT VS COLLECTOR CURRENT FIG.1- POWER DERATING CURVE 400 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) PD, POWER DISSIPATION (mW) SEE NOTE1 300 200 100 0 0 50 100 150 TA= 25 OC f = 20MHz -VCE= 5.0V 1V 100 10 1 200 10 TSB, SUBSTRATE TEMPERATURE ( C) FIG.3-COLLECTOR SAT VOLTAGE VS COLLECTOR CURRENT 1000 100 1000 - IC, COLLECTOR CURRENT (mA) FIG.4- DC CURRENT GAIN VS COLLECTOR CURRENT 1000 150 0C 100 25 0C O -50 C hFE, DC CURRENT GAIN - IC, COLLECTOR CURRENT (mA) - VCE= 1V O 25 C 10 TYPICAL LIMITS O at TA = 25 C O 150 C -IC / -IB = 10 -50 0C 100 1 0.1 0 500 0.1 0.2 0.3 0.4 - VCESAT, COLLECTOR SATURATION VOLTAGE (V) 10 0.1 0.5 FIG.5- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 3.2 1 10 100 - IC, COLLECTOR CURRENT (mA) 1000 FIG.6- TYPICAL EMITTER-COLLECTOR CHARACTERISTICS 100 2.8 0.4 2.4 0.35 2.0 80 - IC, COLLECTOR CURRENT (mA) - IC, COLLECTOR CURRENT (mA) 400 1.8 1.6 300 1.4 1.2 1.0 200 0.8 0.6 100 0.3 0.25 60 0.2 40 0.15 20 0.4 0.1 -I B = 0 .05 mA -I B = 0.2 mA 0 0 0 1 - VCE, COLLECTOR-EMITTER VOLTAGE (V) 2 0 10 20 - VCE, COLLECTOR-EMITTER VOLTAGE (V) Version:B07