TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode SYMBOL TSF30U45C UNIT VRRM 45 V 30 IF(AV) A 15 IFSM 250 A dV/dt 10000 V/μs Isolation voltage from terminal to heatsink t = 1 min VAC 1500 V Min. TYP. Breakdown voltage ( IR =1.0mA ) VBR 45 - - IF = 15A TJ = 25°C VF - 0.450 0.50 IF = 15A TJ = 125°C VF - 0.415 0.45 - 150 500 - 50 100 Voltage rate of change (rated VR) Maximum instantaneous forward voltage per diode ( Note1 ) Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating temperature range Storage temperature range IR MAX. V V μA mA O RθjC 4 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle Document Number: DS_D1401021 Version: B14 TSF30U45C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING GREEN COMPOUND CODE CODE C0 Suffix "G" TSF30U45C PACKAGE PACKING ITO-220AB 50 / Tube EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSF30U45C C0 TSF30U45C C0 TSF30U45C C0G TSF30U45C C0 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 20 15 10 5 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 0 0 25 50 75 100 125 TJ=150oC 10 TJ=125oC 1 TJ=25oC 0.1 TJ=100oC 0.01 150 0 0.2 CASE TEMPERATURE (oC) FIG. 3 TYPICAL REVERSE CHARACTERISTICS 0.6 0.8 FIG. 4 TYPICAL JUNCTION CAPACITANCE 100 10000 TJ=125oC TJ=100oC 10 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 0.4 FORWARD VOLTAGE (V) 1 TJ=25oC 0.1 1000 100 f=1.0MHz Vslg=50mVp-p 0.01 10 20 30 40 50 60 70 80 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number: DS_D1401021 90 100 10 0.1 1 10 REVERSE VOLTAGE (V) 100 Version: B14 TSF30U45C Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H I J 0.95 0.50 2.40 1.45 0.90 3.20 0.037 0.020 0.094 0.057 0.035 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.45 - 0.057 O 2.41 2.67 0.095 0.105 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1401021 Version: B14