TSM2328 Preliminary 100V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 250 @ VGS =10V 100 ID (A) 1.5 General Description The TSM2328 utilized advanced processing techniques to achieve the lowest possible On-Resistance, extremely efficient and cost-effectiveness device. The TSM2328 is universally used for all commercial-industrial applications Block Diagram Features ● ● ● Low RDS(ON) 250mΩ (Max.) Low gate charge typical @ 11.1nC (Typ.) High performance trench technology Ordering Information Part No. Package Packing SOT-23 3Kpcs / 7” Reel TSM2328CX RF N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 1.5 A Pulsed Drain Current * IDM 6 A IS 0.6 A Total Power Dissipation @ TA = 25 C PD 1.38 W Operating Junction Temperature TJ 150 Continuous Source Current (Diode Conduction) o Storage Temperature Range * Limited by maximum junction temperature TSTG ºC o -55 to +150 C Thermal Performance Parameter Symbol Thermal Resistance - Junction to Foot RӨJF Thermal Resistance - Junction to Ambient Note 1: Surface mounted on 1” x 1” FR4 Note 2: Pules width limited by maximum junction temperature 1/4 RӨJA Limit Unit 55 o 100 o C/W C/W Version: Preliminary TSM2328 Preliminary 100V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 100 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1.5A RDS(ON) -- -- 250 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 -- 2.5 V Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA On-State Drain Current VDS = 5V, VGS = 10V ID(ON) 6 -- -- A Forward Transfer Conductance VDS = 15V, ID = 1.5A gfs -- 4 -- S Diode Forward Voltage IS = 1A, VGS = 0V VSD -- 1.2 -- V Qg -- 11.1 -- Qgs -- 4.4 -- Qgd -- 3 -- Ciss -- 975 -- Coss -- 38 -- Crss -- 27 -- td(on) -- 9 -- tr -- 9.4 -- td(off) -- 26.8 -- tf -- 2.6 -- Dynamic (1) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80V, ID = 1.5A, VGS = 5V Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Switching nC pF (2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 30V, ID = 1A, VGEN = 10V, RL =30Ω, RG =6Ω Turn-Off Fall Time nS Note 1: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 2: Guaranteed by design, not subject to production testing 2/4 Version: Preliminary TSM2328 Preliminary 100V N-Channel MOSFET SOT-23 Mechanical Drawing DIM A A1 B C D E F G H I J 3/4 SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 0.118 1.40 1.70 0.055 0.067 2.80 3.10 0.110 0.122 1.00 1.30 0.039 0.051 0.00 0.10 0.000 0.004 0.35 0.50 0.014 0.020 0.10 0.20 0.004 0.008 0.30 0.60 0.012 0.024 5º 10º 5º 10º Version: Preliminary Preliminary TSM2328 100V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary