TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDSON (mΩ) ID (A) 170 @ VGS = -10V -5 220 @ VGS = -4.5V -2 -60 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product P-Channel MOSFET Absolute Maximum Rating (TA = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V ID -10 A IDM -20 A IS -10 A Single Pulse Avalanche Energy (Note 2) EAS 5 mJ Avalanche Current IAS -10 A PDTOT 37 Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b Total Power Dissipation @ TC=25C Operating Junction Temperature +150 TJ, TSTG - 55 to +150 o Symbol Limit RӨJC 4 o 70 o TJ Operating Junction and Storage Temperature Range W o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) RӨJA Unit C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. 1/4 Version: B13 TSM10P06 60V P-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS -60 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) -1 -- -- V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = -60V, VGS = 0V IDSS -- -- -1 µA VDS = -5V, VGS = -10V ID(ON) -10 -- -- A -- 130 170 -- 170 220 Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance VGS = -10V, ID = -5A VGS = -4.5V, ID = -2A RDS(ON) mΩ Forward Transconductance VDS = -15V, ID = -3.5A gfs -- 6 -- S Diode Forward Voltage IS = -2.5A, VGS = 0V VSD -- -1.25 -1.5 V Qg -- 6 -- Qgs -- 1.7 -- Qgd -- 1.5 -- Ciss -- 540 -- Coss -- 60 -- Crss -- 30 -- td(on) -- 7 -- tr -- 9 -- td(off) -- 19 -- -- 4 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -15V, ID = -3.5A, VGS = -10V Input Capacitance Output Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = -15V, RL = 15Ω, ID = -1A, VGEN = -10V, RG = 6Ω Turn-Off Fall Time tf Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2% Notes 2: L=0.1mH, Notes 3: For DESIGN AID ONLY, not subject to production testing. Notes 4: Switching time is essentially independent of operating temperature. 2/4 nS Version: B13 TSM10P06 60V P-Channel MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M 3/4 TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Version: B13 TSM10P06 60V P-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: B13