TSM4416 Preliminary 30V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 30 Features ID (A) 19 @ VGS = 10V 8.5 28 @ VGS = 4.5V 6 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PWM Application Ordering Information Part No. Package Packing TSM4416CS RL SOP-8 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V ID 8.5 A IDM 40 A IS 2.6 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature W 1.6 +150 o TJ, TSTG - 55 to +150 o Symbol Limit TJ Operating Junction and Storage Temperature Range 2.5 C C Thermal Performance Parameter Junction to Case Thermal Resistance RӨJF Junction to Ambient Thermal Resistance (PCB mounted) RӨJA Unit 25 o 50 o C/W C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. 1/4 Version: Preliminary TSM4416 Preliminary 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1 1.8 3 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = 24V, VGS = 0V IDSS -- -- -1.0 µA VDS ≥ 5V, VGS = 10V ID(ON) 40 -- -- A -- 15.5 19 -- 23 28 Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistance Forward Transconductance a Diode Forward Voltage Dynamic a VGS = 10V, ID = 8.5A VGS = 4.5V, ID = 6A RDS(ON) mΩ VDS = 5V, ID = 8.5A gfs -- 23 -- S IS = 1A, VGS = 0V VSD -- 0.71 1.0 V Qg -- 19 24 Qgs -- 9.36 12 Qgd -- 4.2 -- Ciss -- 1040 -- Coss -- 180 -- Crss -- 110 -- td(on) -- 5.2 -- tr -- 4.4 -- td(off) -- 17.3 -- -- 3.3 -- b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V, ID = 8.5A, VGS = 5V VDS = 15V, VGS = 0V, f = 1.0MHz nC pF c Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 1.8Ω, ID = 1A, VGEN = 10V, RG = 3Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 nS Version: Preliminary TSM4416 Preliminary 30V N-Channel MOSFET SOP-8 Mechanical Drawing DIM A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27BSC 0.05BSC 0.10 0.25 0.004 0.009 0º 7º 0º 7º 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 3/4 Version: Preliminary Preliminary TSM4416 30V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary