UNISONIC TECHNOLOGIES CO., LTD 2SC4242 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switching power transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low saturation voltage. * Switching time: tF=0.5μs (Max.)@ IC=5.0A * High reliability *Pb-free plating product number: 2SC4242L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SC4242-TA3-T 2SC4242L-TA3-T Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube 2SC4242L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-033.A 2SC4242 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage RATINGS UNIT 400 V 450 V 8.0 V Continuous 7.0 A Collector Current 14 Peak Base Current 2.0 A Total Power Dissipation @TC=25℃ 40 W PD Derate Above 25℃ 0.32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction -Case SYMBOL VCEO VCBO VEBO IC ICM IB SYMBOL θJC RATINGS 4 UNIT °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage BVCEO ICEO=100mA, IB=0 Collector-Base Breakdown Voltage BVCBO ICBO=1.0mA, IE=0 Emitter-Base Breakdown Voltage BVEBO IEBO=1.0mA, IC=0 Collector Cutoff Current ICBO VCBO=450V, IE=0 Emitter Cutoff Current IEBO VEBO=8.0V, IC=0 ON CHARACTERISTICS DC Current Gain hFE IC=4.0A, VCE=5.0V Collector-Emitter Saturation Voltage VCE (SAT) IC=4.0A, IB=800mA Base-Emitter Saturation Voltage VBE (SAT) IC=4.0A, IB=800mA SWITCHING CHARACTERISTICS On Time tON VCC=150V, IC=5.0A Storage Time tS IB1= -IB2=1.0A, RL=30Ω Fall Time tF Note: Pulse Test: Pulse Width=300µs, Duty Cycle ≤ 2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 100 V V V µA µA 0.8 1.2 V V 1.0 2.5 0.5 µs µs µs 400 450 8.0 10 2 of 4 QW-R203-033.A 2SC4242 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTIC Power Derating 60 50 0 10 s 40 30 20 10 0 0 25 50 75 100 125 150 Time, t (μs) Voltage, V (V) DC Current Gain, hFE Collector Emitter Voltage, VCE (V) Temperature, TC (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-033.A 2SC4242 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-033.A