UNISONIC TECHNOLOGIES CO., LTD
UF9530
Preliminary
POWER MOSFET
-14A, -100V P-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC UF9530 is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC UF9530 is suitable for all commercial-industrial
applications, etc.
1
TO-220
FEATURES
* -14A, -100V, RDS(ON)<0.2Ω @ VGS= -10V, ID=-8.4A
* High Switching Speed
* Dynamic dv/dt Rating
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF9530L-TA3-T
UF9530G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
UF9530L-TA3-T
Package
TO-220
Pin Assignment
1
2
3
G
D
S
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
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Copyright © 2012 Unisonic Technologies Co., Ltd
Packing
Tube
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UF9530
Preliminary
POWER MOSFET
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
VGS=-10V, TC=25°C
-14
A
Continuous
ID
VGS=-10V, TC=100°C
-10
A
Pulsed (Note 1)
IDM
-56
A
Avalanche Current (Note 1)
IAR
-8.4
A
250
mJ
Single Pulse (Note 2)
EAS
Avalanche Energy
Repetitive (Note 1)
EAR
7.9
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
-5.0
V/ns
Power Dissipation (TC=25°C
79
W
PD
Linear Derating Factor
0.53
W/°C
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCE
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case
RATINGS
62
1.9
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
ON CHARACTERISTICS
Static Drain-Source On-State Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID=-250µA, VGS=0V
IGSS
RDS(ON)
VGS(TH)
gFS
CISS
COSS
CRSS
TYP MAX UNIT
-100
V
-0.11
VDS=-100V, VGS=0V
VDS=-80V, VGS=0V, TJ=150°C
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
VGS=-10V, ID=-8.4A (Note 4)
VDS=VGS, ID=-250µA
VDS=-50V, ID=-8.4A
VGS=0V, VDS=-25V, f=1.0MHz
UNISONIC TECHNOLOGIES CO., LTD
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MIN
∆BVDSS/∆TJ Reference to 25°C, ID=-1mA
IDSS
Forward
Reverse
TEST CONDITIONS
-2.0
3.2
760
260
170
V/°C
-25
-250
100
-100
µA
µA
nA
nA
0.20
-4.0
Ω
V
S
pF
pF
pF
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UF9530
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
58
nC
Total Gate Charge
QG
ID=-8.4A, VDS=-80V, VGS=-10V,
Gate to Source Charge
QGS
8.3
nC
(Note 4)
Gate to Drain ("Miller") Charge
QGD
32
nC
Turn-ON Delay Time
tD(ON)
15
ns
Rise Time
tR
58
ns
VDD=-50V, ID=-8.4A, RG=9.1Ω
RD=6.2Ω, (Note 4)
Turn-OFF Delay Time
tD(OFF)
45
ns
Fall Time
tF
46
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
IS
-14
A
Current
Maximum Body-Diode Pulsed Current
ISM
-56
A
(Note 1)
TJ=25°C, IS=-8.4A, VGS=0V
-1.6
V
Drain-Source Diode Forward Voltage
VSD
(Note 4)
130 190
ns
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-8.4A, di/dt=-100A/µs
(Note 4)
Body Diode Reverse Recovery Charge
QRR
650 970 nC
Intrinsic turn-on time is negligible (turn-on is dominated by
Forward Turn-On Time
tON
LS+LD)
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Starting TJ=25°C, L=7.0mH, RG=25Ω, IAS=-8.4A.
3. ISD≤-8.4A, di/dt≤-490A/µs, VDD≤BVDSS, TJ≤175°C.
4. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF9530
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
RG
VDS
VGS
-10V
90%
RD
10%
VGS
DUT
td(ON)
tR
td(OFF) tF
tON
Resistive Switching Waveforms
Resistive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
tOFF
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
-10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF9530
Preliminary
POWER MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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