UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed FEATURES * Fully Avalanche Rated * High Switching Speed * extremely Low On-Resistance * Surface Mount SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UFR9120L-TN3-R UFR9120G-TN3-R UFR9120L-TN3-T UFR9120G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-252 1 G TO-252 G Pin Assignment 2 3 D S D S Packing Tape Reel Tube 1 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS(TC = 25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT -100 V ±20 V TC=25°C -6.6 A Continuous ID Drain Current, VGS@-10V TC=100°C -4.2 A Pulsed (Note 2) IDM -26 A Avalanche Current (Note 2) IAR -6.6 A Single Pulsed (Note 3) EAS 100 mJ Avalanche Energy 4.0 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation TC=25°C 40 W PD Linear Derating Factor 0.32 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating; pulse width limited by max. junction temperature.(See Fig.11) 3. Starting TJ=25°C, L=13mH RG=25Ω, IAS=-3.9A (See Fig.12) 4. ISD ≤ -4.0A, di/dt ≤300A/μs,VDD ≤ V(BR)DSS, TJ ≤ 25°C SYMBOL VDSS VGSS THERMAL DATA PARAMETER SYMBOL RATINGS Junction to Ambient θJA 110 Junction to Case θJC 3.1 Note: 1. For recommended footprint and soldering techniques refer to application note UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 2 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS ID=250µA, VGS=0V -100 IGSS UNISONIC TECHNOLOGIES CO., LTD V -0.11 VDS=-100V, VGS=0V VDS=-80V, VGS=0V , TJ=150°C VGS=+20V VGS=-20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-3.9A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=-10V, VDS=-80V, ID=-4.0A Gate to Source Charge QGS (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=-50V, ID= -4.0A, RG= 12Ω, R Turn-OFF Delay Time tD(OFF) D=12Ω (Note 1, 2) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS MOSFET symbol showing the Maximum Body-Diode Pulsed integral reverse p-n junction diode ISM Current (Note 1) Drain-Source Diode Forward Voltage VSD IS=-3.9A, VGS=0V, TJ =25°C IF=-4.0A, VGS=0V, di/dt = 100A/µs, Body Diode Reverse Recovery Time tRR TJ =25°C (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. Essentially independent of operating temperature. www.unisonic.com.tw MIN TYP MAX UNIT △BVDSS/△TJ Reference to 25°C, ID=-1mA IDSS Forward Reverse TEST CONDITIONS V/°C -25 µA -250 +100 nA -100 nA -2.0 -4.0 0.48 350 110 70 pF pF pF 27 5.0 15 nC nC nC ns ns ns ns -6.6 A -26 A -2.0 150 630 V ns nC 14 47 28 31 100 420 V Ω 3 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-570.a UFR9120 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-570.a