UTC-IC UT3310

UNISONIC TECHNOLOGIES CO., LTD
UT3310
Preliminary
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
„
DESCRIPTION
The UTC UT3310 is a P-channel enhancement mode Power
MOSFET. The UTC UT3310 uses advanced technology to provide
customers with fast switching, low on-resistance and
cost-effectiveness.
The UTC UT3310 is generally applied in low voltage and battery
power applications.
„
FEATURES
* Gate Drive Capability: 2.5V
* Simple Drive Requirement
„
SYMBOL
D(2)
G(1)
S(3)
„
ORDERING INFORMATION
Ordering Number
Package
UT3310G-TN3-R
TO-252
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1
G
Pin Assignment
2
D
3
S
Packing
Tape Reel
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QW-R502-388.a
UT3310
„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
±12
V
Continuous Drain Current (TA =25°C, VGS=10V)
ID
-10
A
Pulsed Drain Current
IDM
-24
A
Total Power Dissipation (TA =25°C)
PD
25
W
Linear Derating Factor
0.01
W/°C
Junction Temperature
TJ
150
℃
Ambient Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case
„
RATINGS
110
5.0
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
Drain-Source On-State Resistance
RDS(ON)
TEST CONDITIONS
VGS=0V, ID=-250µA
Reference to 25°C, ID=-1mA
VDS=-20V,VGS=0V
VDS=0V ,VGS=±12V
-20
VDS= VGS, ID=-250µA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
-0.5
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-6V,VGS=0V,f =1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note2)
QG
VDS=-6V, VGS=-5V, ID=-2.8A
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
Turn-ON Delay Time (Note2)
tD(ON)
VDS=-6V,VGS=-5V, ID=-1A
Turn-ON Rise Time
tR
RG=6Ω, RD=6Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current ( Body Diode )
IS
VD=VG=0V , VS=-1.2V
Pulsed Source Current ( Body Diode )
ISM
(Note1)
Drain-Source Diode Forward Voltage
VSD
IS =-10A, VGS=0V (Note2)
Notes:1. Pulse width limited by safe operating area.
2. Pulse width ≤300us , duty cycle ≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
-1
±100
V
V/°C
µA
nA
150
250
V
mΩ
mΩ
-0.1
300
180
60
pF
pF
pF
6
1.5
0.6
25
60
70
60
nC
nC
nC
ns
ns
ns
ns
-10
-24
-1.2
A
A
V
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QW-R502-388.a
UT3310
„
Preliminary
Power MOSFET
TYPICAL CHARACTERISTICS
Gate Charge Circuit
Gate Charge Waveform
VG
VDS
D
QG
-5V
0.3×Rated
VDS
to the
oscilloscope
G
ID
QGS
QGD
S
-1 ~ -3mA
IG
VGS
Charge
Q
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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