AP9685GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower Gate Charge
D
D
▼ Fast Switching Characteristic
S
▼ RoHS Compliant
SO-8
S
G
BVDSS
80V
RDS(ON)
45mΩ
ID
5.3A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
80
V
+20
V
3
5.3
A
3
3.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
50
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201211132
AP9685GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=1mA
Min.
Typ.
Max. Units
80
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.073
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=5.3A
-
-
45
mΩ
VGS=4.5V, ID=3.0A
-
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
9
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=64V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=5A
-
19
30
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
VDS=40V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
36
-
ns
tf
Fall Time
VGS=10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
1710 2730
pF
Coss
Output Capacitance
VDS=25V
-
135
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
98
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
42
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
84
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9685GM
50
70
50
10V
6.0V
5.0V
4.5V
o
T A =150 C
40
ID , Drain Current (A)
T A =25 o C
60
ID , Drain Current (A)
10V
6.0V
5.0V
4.5V
40
30
20
V G =3.0V
30
20
V G = 3.0 V
10
10
0
0
0.0
2.0
4.0
6.0
8.0
10.0
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
10
Fig 2. Typical Output Characteristics
2.0
48
ID=5A
T A =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
44
40
I D =5.3A
V G =10V
1.6
1.2
0.8
36
0.4
2
4
6
8
-50
10
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
2.5
4
VGS(th) (V)
2
IS(A)
3
T j =150 o C
T j =25 o C
1.5
2
1
1
0
0.5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9685GM
f=1.0MHz
12
10000
ID=5A
C iss
V DS = 40 V
V DS = 50 V
V DS = 64 V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4
C oss
C rss
100
2
10
0
0
10
20
30
40
1
50
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 125℃/W
DC
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4