AP9975GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Lower On-resistance
D1
D2
D1
▼ Surface Mount Package
S2
▼ RoHS Compliant
SO-8
S1
G2
BVDSS
60V
RDS(ON)
21mΩ
ID
7.6A
G1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
+25
V
ID@TA=25℃
Continuous Drain Current3, VGS @ 10V
7.6
A
6.1
A
ID@TA=70℃
3
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201011182
AP9975GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.06
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=7A
-
-
21
mΩ
VGS=4.5V, ID=5A
-
-
27
mΩ
VGS=0V, ID=250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=7A
-
26
40
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
VDS=30V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
40
-
ns
tf
Fall Time
RD=30Ω
-
13
-
ns
Ciss
Input Capacitance
VGS=0V
-
2320 3700
pF
Coss
Output Capacitance
VDS=25V
-
200
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
170
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.86
-
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9975GM
100
130
10V
7.0V
o
T A = 25 C
117
104
80
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
TA=150oC
91
5.0V
78
65
4.5V
52
39
5.0V
4.5V
60
40
V G =3.0V
26
20
V G =3.0V
13
0
0
0
2
4
6
8
10
12
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
27
2.5
ID=5A
T A =25 o C
ID=7A
V G =10V
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
25
23
1.5
1.0
21
0.5
0.0
19
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
7
6
2
VGS(th) (V)
5
IS(A)
4
T j =150 o C
3
T j =25 o C
1.5
2
1
1
0
0.5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9975GM
f=1.0MHz
12
10000
ID=7A
V DS = 30 V
V DS = 38 V
V DS = 48 V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
1000
4
C oss
C rss
2
100
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by RDS(ON)
ID (A)
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 135℃/W
Single Pulse
0.001
0.01
0.01
0.1
1
10
100
1000
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4