BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. • The BAW100G is Halogen Free by design. SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) MARKING CODES: BAW100: CJSS BAW100G: CJSG SYMBOL Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance UNITS VR 75 VRRM IF 85 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM IFSM 2.0 A 1.0 A 350 mW PD TJ, Tstg ΘJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR VR=25V, TA=150°C VR=75V V UNITS 30 μA 1.0 μA 50 μA BVR VR=75V, TA=150°C IR=100μA VF IF=1.0mA 715 mV VF IF=10mA 855 mV VF IF=50mA 1.00 V VF IF=150mA 1.25 V CT VR=0, f=1.0MHz IF=IR=10mA, RL=100Ω, Rec. to 1.0mA 2.0 pF 6.0 ns trr 85 V R4 (20-November 2009) BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHODE D2 4) CATHODE D1 MARKING CODES: BAW100: CJSS BAW100G: CJSG R4 (20-November 2009) w w w. c e n t r a l s e m i . c o m