CENTRAL BAW100

BAW100
BAW100G
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW100 and
BAW100G each consist of two electrically isolated high
speed silicon switching diodes packaged in an epoxy
molded SOT-143 surface mount case. This device is
designed for high speed switching applications.
• The BAW100G is Halogen Free by design.
SOT-143 CASE
MAXIMUM RATINGS: (TA=25°C)
MARKING CODES:
BAW100:
CJSS
BAW100G: CJSG
SYMBOL
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
UNITS
VR
75
VRRM
IF
85
V
250
mA
IFRM
IFSM
500
mA
4.0
A
IFSM
IFSM
2.0
A
1.0
A
350
mW
PD
TJ, Tstg
ΘJA
-65 to +150
°C
357
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
IR
IR
VR=25V, TA=150°C
VR=75V
V
UNITS
30
μA
1.0
μA
50
μA
BVR
VR=75V, TA=150°C
IR=100μA
VF
IF=1.0mA
715
mV
VF
IF=10mA
855
mV
VF
IF=50mA
1.00
V
VF
IF=150mA
1.25
V
CT
VR=0, f=1.0MHz
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
2.0
pF
6.0
ns
trr
85
V
R4 (20-November 2009)
BAW100
BAW100G
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) ANODE D1
2) ANODE D2
3) CATHODE D2
4) CATHODE D1
MARKING CODES:
BAW100:
CJSS
BAW100G: CJSG
R4 (20-November 2009)
w w w. c e n t r a l s e m i . c o m