PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 30,475 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP591V Typical Electrical Characteristics R3 (22-March 2010) w w w. c e n t r a l s e m i . c o m