MICROCHIP TC1187

TC1070/TC1071/TC1187
50mA, 100mA and 150mA Adjustable CMOS LDOs with Shutdown
Features:
General Description:
•
•
•
•
The TC1070, TC1071 and TC1187 are adjustable
LDOs designed to supersede a variety of older (bipolar)
voltage regulators. Total supply current is typically
50 μA at full load (20 to 60 times lower than in bipolar
regulators).
•
•
•
•
50 µA Ground Current for Longer Battery Life
Adjustable Output Voltage
Very Low Dropout Voltage
Choice of 50 mA (TC1070), 100 mA (TC1071)
and 150 mA (TC1187) Output
Power-Saving Shutdown Mode
Over Current and Over Temperature Protection
Space-Saving 5-Pin SOT-23 Package
Pin Compatible with Bipolar Regulators
Applications:
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
The TC1070, TC1071 and TC1187 are stable with an
output capacitor of only 1 μF and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output versions, please see the
TC1174 (IOUT = 300 mA) data sheet.
Typical Application
VIN
1
2
VIN
Package Type
VOUT
TC1070
TC1071
TC1187
5
VOUT
C1 +
1 µF
GND
5-Pin SOT-23
VOUT
ADJ
5
4
R1
3
SHDN
The devices’ key features include ultra low-noise
operation, very low dropout voltage – typically 85 mV
(TC1070); 180 mV (TC1071); and 270 mV (TC1187) at
full load, and fast response to step changes in load.
Supply current is reduced to 0.5 μA (maximum) when
the shutdown input is low. The devices incorporate both
over-temperature and over-current protection. Output
voltage is programmed with a simple resistor divider
from VOUT to ADJ to GND.
ADJ
TC1070
TC1071
TC1187
4
1
2
3
R2
VIN
Shutdown Control
(from Power Control Logic)
© 2007 Microchip Technology Inc.
VOUT = VREF x
GND SHDN
+1 ]
[ R1
R2
DS21353D-page 1
TC1070/TC1071/TC1187
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 5)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
*Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
VIN
Input Operating Voltage
2.7
—
6.0
V
Note 6
IOUTMAX
Maximum Output Current
50
100
150
—
—
—
—
—
—
mA
TC1070
TC1071
TC1187
VOUT
Adjustable Output
Voltage Range
VREF
—
5.5
V
VREF
Reference Voltage
1.165
1.20
1.235
V
ΔVREF/ΔT
VREF Temperature Coefficient
—
40
—
ppm/°C
ΔVOUT/ΔVIN
Line Regulation
ΔVOUT/VOUT
Load Regulation
VIN-VOUT
Dropout Voltage
—
0.05
0.35
%
(VR + 1V) ≤ VIN ≤ 6V
TC1070; TC1071
TC1187
—
—
0.5
0.5
2
3
%
IL = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
(Note 2)
2
65
85
180
270
—
—
120
250
400
mV
TC1071; TC1187
TC1187
—
—
—
—
—
IL = 0.1 mA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 3)
—
50
80
μA
SHDN = VIH, IL = 0
Supply Current
IIN
Note 1
IINSD
Shutdown Supply Current
—
0.05
0.5
μA
SHDN = 0V
PSRR
Power Supply Rejection Ratio
—
64
—
dB
FRE ≤ 1 kHz
IOUTSC
Output Short Circuit Current
—
300
450
mA
VOUT = 0V
ΔVOUT/ΔPD
Thermal Regulation
—
0.04
—
V/W
Note 4
TSD
Thermal Shutdown Die Temperature
—
160
—
°C
ΔTSD
Thermal Shutdown Hysteresis
—
10
—
°C
eN
Output Noise
—
260
—
nV/√Hz
SHDN Input High Threshold
45
—
—
%VIN
IL = IOUTMAX
SHDN Input
VIH
VIN = 2.5V to 6.5V
Note 1: TC VOUT = (VOUTMAX – VOUTMIN) x 106
VOUT x ΔT
2:
3:
4:
5:
6:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
DS21353D-page 2
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 μF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
VIL
Parameter
Min
Typ
Max
Units
SHDN Input Low Threshold
—
—
15
%VIN
Adjust Input Leakage Current
—
50
—
pA
Test Conditions
VIN = 2.5V to 6.5V
ADJ Input
IADJ
Note 1: TC VOUT = (VOUTMAX – VOUTMIN) x 10
6
VOUT x ΔT
2:
3:
4:
5:
6:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.
© 2007 Microchip Technology Inc.
DS21353D-page 3
TC1070/TC1071/TC1187
2.0
TYPICAL CHARACTERISTICS
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
DROPOUT VOLTAGE (V)
0.018
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.100
0.090
ILOAD = 10mA
DROPOUT VOLTAGE (V)
Note:
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
CIN = 1μF
COUT = 1μF
-40
0.020
0
20
50
TEMPERATURE (°C)
70
125
0.040
0.030
0.020
0.300
ILOAD = 10mA
CIN = 1μF
COUT = 1μF
-20
0
20
50
TEMPERATURE (°C)
70
125
Dropout Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 150mA
0.012
0.010
0.008
0.006
0.004
CIN = 1μF
COUT = 1μF
0.000
0.250
0.200
0.150
0.100
0.050
CIN = 1μF
COUT = 1μF
0.000
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
-40
Ground Current vs. VIN (VOUT = 3.3V)
90
ILOAD = 10mA
80
70
60
50
40
30
20
CIN = 1μF
COUT = 1μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
DS21353D-page 4
-20
0
20
50
TEMPERATURE (°C)
70
125
Ground Current vs. VIN (VOUT = 3.3V)
ILOAD = 100mA
80
GND CURRENT (μA)
GND CURRENT (μA)
0.050
Dropout Voltage vs. Temperature (VOUT = 3.3V)
0.014
90
0.060
-40
0.016
0.002
0.070
0.000
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
-20
ILOAD = 50mA
0.080
0.010
0.000
Dropout Voltage vs. Temperature (VOUT = 3.3V)
70
60
50
40
30
20
CIN = 1μF
COUT = 1μF
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Ground Current vs. VIN (VOUT = 3.3V)
80
ILOAD = 0
ILOAD = 150mA
3
60
2.5
50
VOUT (V)
GND CURRENT (μA)
70
VOUT vs. VIN (VOUT = 3.3V)
3.5
40
30
2
1.5
1
20
0.5
CIN = 1μF
COUT = 1μF
10
0
CIN = 1μF
COUT = 1μF
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
VIN (V)
3.0
2 2.5 3 3.5
4 4.5 5
5.5 6 6.5 7
VIN (V)
VOUT vs. VIN (VOUT = 3.3V)
3.5
0.5 1 1.5
Output Voltage vs. Temperature (VOUT = 3.3V)
3.320
ILOAD = 100mA
ILOAD = 10mA
3.315
3.310
3.305
VOUT (V)
VOUT (V)
2.5
2.0
1.5
3.300
3.295
3.290
1.0
3.285
0.5
CIN = 1μF
COUT = 1μF
0.0
0
3.290
3.288
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
CIN = 1μF
COUT = 1μF
VIN = 4.3V
3.280
3.275
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
Output Voltage vs. Temperature (VOUT = 3.3V)
ILOAD = 150mA
VOUT (V)
3.286
3.284
3.282
3.280
3.278
3.276
CIN = 1μF
COUT = 1μF
VIN = 4.3V
3.274
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
© 2007 Microchip Technology Inc.
DS21353D-page 5
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Output Voltage vs. Temperature (VOUT = 5V)
5.025
ILOAD = 10mA
4.990
4.988
5.010
4.986
5.005
5.000
4.995
4.990
4.985
4.984
4.982
4.980
4.978
VIN = 6V
CIN = 1μF
COUT = 1μF
-40
ILOAD = 150mA
4.992
5.015
VOUT (V)
VOUT (V)
5.020
Output Voltage vs. Temperature (VOUT = 5V)
4.994
VIN = 6V
CIN = 1μF
COUT = 1μF
4.976
-20
-10
0
20
40
85
4.974
125
-40
-20
-10
TEMPERATURE (°C)
ILOAD = 10mA
70
50
40
30
20
10
-10
0
20
40
TEMPERATURE (°C)
85
50
40
30
20
VIN = 6V
CIN = 1μF
COUT = 1μF
-10
125
Stability Region vs. Load Current
RLOAD = 50Ω
COUT = 1μF
CIN = 1μF
1.0
-20
20
40
85
125
Power Supply Rejection Ratio
-30
-35
COUT = 1μF
to 10μF
-40
100
-45
10
1
0
TEMPERATURE (°C)
1000
COUT ESR (Ω)
NOISE (μV/√Hz)
125
ILOAD = 150mA
-40
Output Noise vs. Frequency
10.0
85
0
0
-20
40
60
10
VIN = 6V
CIN = 1μF
COUT = 1μF
-40
20
Temperature vs. Quiescent Current (VOUT = 5V)
80
Stable Region
PSRR (dB)
GND CURRENT (μA)
60
Temperature vs. Quiescent Current (VOUT = 5V)
GND CURRENT (μA)
70
0
TEMPERATURE (°C)
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1μF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
DS21353D-page 6
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Measure Rise Time of 3.3V LDO
Thermal Shutdown Response of 5.0V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 184μS
Conditions: VIN = 6V, CIN = 0μF, COUT = 1μF
VSHDN
VOUT
VOUT
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
Measure Rise Time of 5.0V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 192μS
Measure Fall Time of 3.3V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 4.3V,
Temp = 25°C, Fall Time = 52μS
VSHDN
VSHDN
VOUT
VOUT
© 2007 Microchip Technology Inc.
DS21353D-page 7
TC1070/TC1071/TC1187
TYPICAL CHARACTERISTICS (CONTINUED)
Note: Unless otherwise specified, all parts are measured at temperature = +25°C)
Measure Fall Time of 5.0V LDO
Conditions: CIN = 1μF, COUT = 1μF, ILOAD = 100mA, VIN = 6V,
Temp = 25°C, Fall Time = 88μS
VSHDN
VOUT
DS21353D-page 8
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23)
Symbol
1
VIN
3.1
2
GND
3
SHDN
Description
Unregulated supply input.
Ground terminal.
Shutdown control input.
4
ADJ
Output voltage adjust terminal.
5
VOUT
Regulated voltage output.
Input Voltage Supply (VIN)
3.4
Output Voltage Adjust (ADJ)
Connect unregulated input supply to the VIN pin. If
there is a large distance between the input supply and
the LDO regulator, some input capacitance is
necessary for proper operation. A 1 µF capacitor
connected from VIN to ground is recommended for
most applications.
Output voltage setting is programmed with a resistor
divider from VOUT to this input. A capacitor may also be
added to this input to reduce output noise (see
Section 4.2 “Output Capacitor”).
3.2
Connect the output load to VOUT of the LDO. Also
connect the positive side of the LDO output capacitor
as close as possible to the VOUT pin.
Ground (GND)
Connect the unregulated input supply ground return to
GND. Also connect the negative side of the 1 µF typical
input decoupling capacitor close to GND and the
negative side of the output capacitor C1 to GND.
3.3
3.5
Regulated Voltage Output (Vout)
Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic high is
applied to this input. The regulator enters shutdown
when a logic low is applied to this input. During
shutdown, output voltage falls to zero and supply current is reduced to 0.5 μA (maximum).
© 2007 Microchip Technology Inc.
DS21353D-page 9
TC1070/TC1071/TC1187
4.0
DETAILED DESCRIPTION
4.1
The TC1070, TC1071 and TC1187 are adjustable
output voltage regulators. (If a fixed version is desired,
please see the TC1014/TC1015/TC1185 data sheet.)
Unlike bipolar regulators, the TC1070, TC1071 and
TC1187 supply current does not increase with load
current. In addition, VOUT remains stable and within
regulation over the entire 0 mA to IOUTMAX operating
load current range, (an important consideration in RTC
and CMOS RAM battery back-up applications).
Figure shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05 μA
(typical), VOUT falls to zero volts.
3.0V
Battery
+
1
VIN
+ C1
1 μF
2
3
VOUT
5
R1
470K
GND
SHDN
+2.45V
C2 +
1 μF
TC1070
TC1071
TC1187
ADJ
4
C3
100 pF
to 0.01 μF
(Optional)
R2
470K
Shutdown Control
(from Power
Control Logic)
FIGURE 4-1:
DS21353D-page 10
Battery-Operated Supply
Adjust Input
The output voltage setting is determined by the values
of R1 and R2 (Equation 4-1). The ohmic values of these
resistors should be between 470K and 3M to minimize
bleeder current.
The output voltage setting is calculated using the
following equation.
EQUATION 4-1:
VOUT = VREF x
[
R1
+1
R2
]
The voltage adjustment range of the TC1070, TC1071
and TC1187 is from VREF to (VIN – 0.05V). If so desired,
a small capacitor (10 pF to 0.01 μF) may be added to
the ADJ input to further reduce output noise.
4.2
Output Capacitor
A 1 μF (minimum) capacitor from VOUT to ground is
recommended. The output capacitor should have an
effective series resistance greater than 0.1Ω and less
than 5.0Ω, and a resonant frequency above 1 MHz. A
1 μF capacitor should be connected from VIN to GND
if there is more than 10 inches of wire between the
regulator and the AC filter capacitor, or if a battery is
used as the power source. Aluminum electrolytic or
tantalum capacitor types can be used. (Since many
aluminum
electrolytic
capacitors
freeze
at
approximately -30°C, solid tantalums are recommended for applications operating below -25°C.)
When operating from sources other than batteries,
supply-noise rejection and transient response can be
improved by increasing the value of the input and
output capacitors and employing passive filtering
techniques.
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
5.0
THERMAL CONSIDERATIONS
5.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
5.2
Equation 5-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
Given:
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst-case actual power dissipation:
EQUATION 5-1:
= 3.0V ±10%
VOUTMIN
= 2.7V – 2%
ILOADMAX
= 40 mA
TJMAX
= 125°C
TAMAX
= 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.10) – (2.7 x .0.98)]40 x 10–3
P D≈ (VINmax – VOUTmin)ILOADmax
Where:
PD
VINMAX
VOUTMIN
ILOADMAX
VINMAX
= Worst-case actual power dissipation
= Maximum voltage on VIN
= Minimum regulator output voltage
= Maximum output (load) current
= 26.2 mW
Maximum allowable power dissipation:
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 55)
220
= 318 mW
The
maximum
allowable
power
dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
junction-to-air (θJA). The 5-Pin SOT-23 package has a
θJA of approximately 220° C/Watt.
In this example, the TC1070 dissipates a maximum of
26.2 mW which is below the allowable limit of 318 mW.
In a similar manner, Equation 5-1 and Equation 5-2 can
be used to calculate maximum current and/or input
voltage limits.
EQUATION 5-2:
5.3
PDMAX = (TJMAX – TAMAX)
θJA
where all terms are previously defined.
© 2007 Microchip Technology Inc.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21353D-page 11
TC1070/TC1071/TC1187
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
5-Lead SOT-23-5
Example:
XXNN
(V)
Adjustable
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
6.2
TC1070
Code
TC1071
Code
TC1187
Code
BANN
BBNN
R9NN
XXNN
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
Taping Form
Component Taping Orientation for 5-Pin SOT-23 (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
for TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size:
Package
5-Pin SOT-23
DS21353D-page 12
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in.
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
5-Lead Plastic Small Outline Transistor (OT) [SOT-23]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
Units
Dimension Limits
Number of Pins
MILLIMETERS
MIN
NOM
MAX
N
5
Lead Pitch
e
0.95 BSC
Outside Lead Pitch
e1
Overall Height
A
0.90
–
Molded Package Thickness
A2
0.89
–
1.30
Standoff
A1
0.00
–
0.15
Overall Width
E
2.20
–
3.20
Molded Package Width
E1
1.30
–
1.80
Overall Length
D
2.70
–
3.10
1.90 BSC
1.45
Foot Length
L
0.10
–
0.60
Footprint
L1
0.35
–
0.80
Foot Angle
φ
0°
–
30°
Lead Thickness
c
0.08
–
0.26
Lead Width
b
0.20
–
0.51
Notes:
1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.
2. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing C04-091B
© 2007 Microchip Technology Inc.
DS21353D-page 13
TC1070/TC1071/TC1187
DS21353D-page 14
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
APPENDIX A:
REVISION HISTORY
Revision D (March 2007)
• Ground current changed to 50 µA.
• Package type changed to SOT-23.
• Section 3.0 “Pin Descriptions”: Added pin
descriptions.
• Section 6.0 “Packaging Information”: Updated
packaging information.
Revision C (January 2006)
• Undocumented changes.
Revision B (May 2002)
• Undocumented changes.
Revision A (March 2002)
• Original Release of this Document.
© 2007 Microchip Technology Inc.
DS21353D-page 15
TC1070/TC1071/TC1187
NOTES:
DS21353D-page 16
© 2007 Microchip Technology Inc.
TC1070/TC1071/TC1187
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X
XXXXX
Device
Temperature
Range
Package
Device
TC1070: 50 mA, Adjustable CMOS LDO w/Shutdown
TC1071: 100 mA, Adjustable CMOS LDO w/Shutdown
TC1187: 150 mA, Adjustable CMOS LDO w/Shutdown
Temperature Range
V
Package
CT713 =
Examples:
a)
TC1070VCT713:
b)
TC1071VCT713:
c)
TC1187VCT713:
50 mA, Adjustable
5LD SOT-23 package
100 mA, Adjustable,
5LD SOT-23 package
150 mA, Adjustable
5LD SOT-23 package
= -40°C to +125°C
Plastic small outline transistor (OT) SOT-23,
5 lead, (tape and reel).
© 2007 Microchip Technology Inc.
DS21353D-page 17
TC1070/TC1071/TC1187
NOTES:
DS21353D-page 18
© 2007 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,
PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, Linear Active Thermistor, Migratable
Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,
MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2007, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial
EEPROMs, microperipherals, nonvolatile memory and analog
products. In addition, Microchip’s quality system for the design and
manufacture of development systems is ISO 9001:2000 certified.
© 2007 Microchip Technology Inc.
DS21353D-page 19
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
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Tel: 852-2401-1200
Fax: 852-2401-3431
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Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
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Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
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Tel: 91-20-2566-1512
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Tel: 678-957-9614
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Canada
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Tel: 86-28-8665-5511
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Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
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Tel: 60-4-646-8870
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Tel: 63-2-634-9065
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Tel: 86-21-5407-5533
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Tel: 65-6334-8870
Fax: 65-6334-8850
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Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
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Tel: 886-3-572-9526
Fax: 886-3-572-6459
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Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
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Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
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Italy - Milan
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Fax: 39-0331-466781
Netherlands - Drunen
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Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
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Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
12/08/06
DS21353D-page 20
© 2007 Microchip Technology Inc.