NSR0140M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. http://onsemi.com Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc Low Reverse Current Lead−Free Plating Pb−Free Package is Available 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MARKING DIAGRAM 2 MAXIMUM RATINGS Rating Symbol Value Unit VRM 40 V Reverse Voltage VR 30 V Forward Continuous Current (DC) IF 30 mA IFSM 500 mA Peak Reverse Voltage Peak Forward Surge Current ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 100 mW 1.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 1000 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +125 °C 1 SOD−723 CASE 509AA PLASTIC 1 7E MG G 2 7E = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSR0140M2T5G SOD−723 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−5 Minimum Pad. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 0 1 Publication Order Number: NSR0140/D NSR0140M2T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR − 300 500 nAdc Forward Voltage (IF = 1.0 mAdc) VF − 0.28 0.35 Vdc 1000 IR , REVERSE CURRENT (μA) 1.0 150 °C 0.1 125 °C 0 0.05 85°C 0.1 TA = 150°C 100 125°C 10 85°C 1.0 0.1 25°C 0.01 0.15 25°C 0.2 −40 °C 0.25 0.3 0.35 −55 °C 0.4 0.45 0.001 0.5 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 2. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 16 18 35 NSR0140M2T5G PACKAGE DIMENSIONS SOD−723 CASE 509AA−01 ISSUE O D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches SOD−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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