ONSEMI NSVR0320MW2T1G

NSR0320MW2T1G,
NSVR0320MW2T1G,
NSR0320MW2T3G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
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Features
 Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
 High Current Capability
 ESD Rating:
HIGH CURRENT
SCHOTTKY BARRIER DIODE
Human Body Model: CLASS 3B
Machine Model: C
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*





MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Rating
Reverse Voltage
Peak Revese Voltage
Symbol
Value
Unit
VR
20
Vdc
VRM
23
V
200
2.0
mW
mW/C
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF
Forward Current (DC)
Continuous
IF
Forward Current
t = 8.3 ms Half Sinewave
IF
Junction Temperature Range
TJ
−55 to +125
C
Storage Temperature Range
Tstg
−55 to +150
C
1
5
A
A
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
RD MG
G
RD = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Package
Shipping†
NSR0320MW2T1G
Device
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
NSVR0320MW2T1G
SOD−323
(Pb−Free)
3,000 /
Tape & Reel
NSR0320MW2T3G
SOD−323
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
Publication Order Number:
NSR0320MW2T1/D
NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
CT
−
25
29
pF
Reverse Leakage (VR = 15 V)
IR
−
10
50
mA
Reverse Leakage (VR = 2.0 V @ 85C)
IR
−
200
300
mA
Reverse Leakage (VR = 15.0 V @ 85C)
IR
−
450
1000
mA
Forward Voltage (IF = 10 mA)
VF
−
0.24
0.27
V
Forward Voltage (IF = 100 mA)
VF
−
0.30
0.35
V
Forward Voltage (IF = 900 mA)
VF
−
0.45
0.50
V
10000
100
IR, REVERSE CURRENT (mA)
150C
150C
10
85C
−55C
1
0.0
25C
0.1
−45C
0.2
0.3
0.4
0.5
125C
1000
85C
100
10
25C
1
0.6
0
5
10
15
20
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
140
120
CT, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
100
80
60
40
20
0
0
5
10
15
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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2
20
25
NSR0320MW2T1G, NSVR0320MW2T1G, NSR0320MW2T3G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSR0320MW2T1/D