BSS84LT1, SBSS84LT1 Power MOSFET Single P-Channel SOT-23 -50 V, 10 W • SOT−23 Surface Mount Package Saves Board Space • AEC Q101 Qualified − SBSS84LT1 • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX −50 V 10 W @ 10 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current Continuous @ TA = 25°C Pulsed Drain Current (tp ≤ 10 ms) ID IDM 130 520 Total Power Dissipation @ TA = 25°C PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RqJA 556 °C/W TL 260 °C Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds P−Channel 3 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 2 3 SOT−23 CASE 318 STYLE 21 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 3 Drain PD MG G 1 Gate PD M G 2 Source = Specific Device Code = Date Code = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BSS84LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SBSS84LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 March, 2012 − Rev. 7 1 Publication Order Number: BSS84LT1/D BSS84LT1, SBSS84LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS −50 − − Vdc − − − − − − −0.1 −15 −60 − ±10 nAdc Vdc OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Zero Gate Voltage Drain Current (VDS = −25 Vdc, VGS = 0 Vdc) (VDS = −50 Vdc, VGS = 0 Vdc) (VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA) VGS(th) −0.9 − −2.0 Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc) RDS(on) − 4.7 10 W |yfs| 50 − − mS pF mAdc ON CHARACTERISTICS (Note 1) Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance VDS = 5.0 Vdc Ciss − 36 − Output Capacitance VDS = 5.0 Vdc Coss − 17 − Transfer Capacitance VDG = 5.0 Vdc Crss − 6.5 − td(on) − 3.6 − tr − 9.7 − td(off) − 12 − tf − 1.7 − QT − 2.2 − nC IS − − −0.130 A ISM − − −0.520 VSD − − −2.2 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time Turn−Off Delay Time VDD = −15 Vdc, ID = −2.5 Adc, RL = 50 W Fall Time Gate Charge VDD = −40 Vdc, ID = −0.5 A, VGS = −10 V ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 2) VGS = 0 V, IS = −130 mA V 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.5 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 25°C VDS = 10 V 0.5 - 55°C 150°C 0.4 0.3 0.2 0.1 0 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -3.5 V -3.25 V 0.4 0.35 0.3 -3.0 V 0.25 0.2 -2.75 V 0.15 -2.5 V 0.1 -2.25 V 0.05 0 4 TJ = 25°C 0.45 0 Figure 1. Transfer Characteristics 1 2 3 4 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. On−Region Characteristics http://onsemi.com 2 9 10 BSS84LT1, SBSS84LT1 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 9 VGS = -4.5 V 8 150°C 7 6 25°C 5 4 -55°C 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 7 150°C VGS = -10 V 6.5 6 5.5 5 4.5 4 25°C 3.5 3 -55°C 2.5 2 0 0.1 0.2 -ID, DRAIN CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = -4.5 V ID = -0.13 A 1.2 1 0.8 -5 45 95 -6 -5 -4 ID = -0.5 A -3 -2 -1 0 145 VDS = -40 V TJ = 25°C -7 500 0 1000 Figure 6. Gate Charge 1 TJ = 150°C 25°C -55°C 0.01 0.001 0 0.5 1500 QT, TOTAL GATE CHARGE (pC) Figure 5. On−Resistance Variation with Temperature 0.1 0.6 -8 TJ, JUNCTION TEMPERATURE (°C) ID, DRAIN CURRENT (AMPS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = -10 V ID = -0.52 A 1.4 0.6 -55 0.5 -ID, DRAIN CURRENT (AMPS) 2 1.6 0.4 Figure 4. On−Resistance versus Drain Current Figure 3. On−Resistance versus Drain Current 1.8 0.3 1.0 1.5 2.0 2.5 -VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage http://onsemi.com 3 3.0 2000 BSS84LT1, SBSS84LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BSS84LT1/D