UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T 2SC5027EL-x-TF3-T 2SC5027EL-x-TF3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 TO-220F2 TO-220F Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tube Tube 1 of 4 QW-R203-030.C 2SC5027E NPN SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TC = 25℃) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 750 V Collector-Emitter Voltage VCEO 700 V Collector-Emitter Voltage VEBO 7 V Peak Collector Current IC 3 A Collector Current (Pulse) ICP 10 A Base Current IB 1.5 A TO-220/TO-220F 50 Power Dissipation PD W TO-220F2 52 ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time SYMBOL TEST CONDITIONS BVCBO IC=1mA, IE=0 BVCEO IC=5mA, IB=0 BVEBO IE=1mA, IC=0 IC=1.5A, IB1= -IB2=0.3A VCEO(SUS) L=2mH, Clamped ICBO VCB=750V, IE=0 IEBO VEB=5V, IC=0 VCE=5V, IC=0.2A hFE1 hFE 2 VCE=5V, IC=1A VCE (SAT) IC=1.5A, IB=0.3A VBE (SAT) IC=1.5A, IB=0.3A COB VCB=10V, f=1MHz, IE=0 fT VCE=10V, IC=0.2A tON VCC=400V IC=5IB1= -2.5IB2=2A tS RL=200Ω tF MIN 750 700 7 TYP MAX 700 UNIT V V V V 10 8 10 10 40 μA μA 2 1.5 V V pF MHz μs μs μs 60 15 0.5 3 0.3 CLASSIFICATION of hFE1 CLASSIFICATION RANGE N 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw R 15 ~ 30 O 20 ~ 40 2 of 4 QW-R203-030.C s 0μ 10 1m s C D www.unisonic.com.tw s UNISONIC TECHNOLOGIES CO., LTD m 10 Collector Current, Ic (A) Time, tON, tSTG, tF (μs) Collector Current, Ic (A) Saturation Voltage, VBE(SAT) , VCE(SAT) (V) DC Current Gain, hFE Collector Current, IC (A) 2SC5027E NPN SILICON TRANSISTOR ■ TYPICAL CHARACTERISTICS QW-R203-030.C 3 of 4 2SC5027E NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Power Derating Reverse Operating Area 80 IB2=-0.3A Power Dissipation, PD (W) Collector Current, Ic (A) 100 10 1 0. 1 70 60 50 40 30 20 10 0.0 1 100us 10 100 1ms 1000 0 10000 Collector-Emitter Voltage, VCE (V) 0 25 50 75 100 125 150 175 Case Temperature, TC (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-030.C