UTC-IC 2SB824L-X-TM3-T

UNISONIC TECHNOLOGIES CO., LTD
2SB824
PNP SILICON TRANSISTOR
PNP PLANAR SILICON
TRANSISTOR
„
1
FEATURES
* Low collector-to-emitter saturation voltage:
VCE(SAT)=-0.4V max/IC=-3A, IB=-0.3A
1
TO-251
1
„
SOT-89
TO-126
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB824L-x-AB3-R
2SB824G-x-AB3-R
2SB824L-x-T60-K
2SB824G-x-T60-K
2SB824L-x-TM3-T
2SB824G-x-TM3-T
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
SOT-89
TO-126
TO-251
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tape Reel
Bulk
Tube
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2SB824
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-5
A
Collector Current (Pulse)
ICP
-9
A
SOT-89
0.5
Collector Dissipation
PC
W
TO-126/ TO-251
1
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time
„
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
fT
COB
VCE(SAT)
tON
tSTG
tF
TEST CONDITIONS
IC =-1mA, IE=0
IC=-1mA, RBE =∞
IC =0, IE=-1mA
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-1A
VCE=-2V, IC=-3A
VCE =-5V, IC =-1A
VCB =-10V, f=1MHz
IC=-3A, IB=-0.3A
See specified test circuit
See specified test circuit
See specified test circuit
MIN
-60
-50
-6
TYP
MAX
-0.1
-0.1
360
70
30
30
100
-0.4
0.1
1.4
0.2
UNIT
V
V
V
mA
mA
MHZ
pF
V
μs
μs
μs
CLASSIFICATION of hFE1
RANK
RANGE
Q
70-140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
100-200
S
180-360
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„
PNP SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
10
-20
0
=8
TA
10
IC/IB=20
5
25
TA =8
0
Collector Current, -IC (A)
Collector-Emitter Saturation Voltage,
-VCE (SAT) (V)
Collector Current, -IC (A)
-500
mA
A A
0m 50m 0mA 0mA
0
4
3
- - 30 -25
DC Current Gain, hFE
„
PNP SILICON TRANSISTOR
Base-Emitter Saturation Voltage vs.
Collector Current
7
3
5
2
3
1.0
2
5
3
=
TA
2
80
5
IC/IB=10
1.0
-20
0.1
7
IC/IB=20
5
25
3
2
3
0.01
2
3
5
2
3
5
2
3
5
0.1
1.0
Collector Current, -IC (A)
10
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
2
3
5
2
3
5
2
3
5
0.1
1.0
Collector Current, -IC (A)
10
2
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
ASO
2
ICP
10
7
10
0m
s
IC
5
s
1m
ms
10
3
2
DC
Op
Collector Current , -IC (A)
10000
Transition frequency, fT (MHz)
„
er a
1.0
ti o
7
n
5
3
2
0.1
5
(Single pulse with
regard to 1 ~ 100ms)
7
2
3
5
7
2
3
5
7
1.0
10
100
Collector-to-Emitter Voltage, -VCE (V)
Transition Frequency vs. Collector Current
3000
1000
VCE=-5V
f=1MHz
TC=25℃
300
100
30
10
3
1
0.01 0.03
0.1
0.3
1
3
Collector Current, -IC (A)
10
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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