2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Features • • • • • • • Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier 2SJ160, 2SJ161, 2SJ162 Outline TO-3P D 1 G 2 3 1. Gate 2. Source (Flange) 3. Drain S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SJ160 Symbol Ratings Unit VDSX –120 V 2SJ161 –140 2SJ162 –160 Gate to source voltage VGSS ±15 V Drain current ID –7 A Body to drain diode reverse drain current I DR –7 A 1 Channel dissipation Pch* 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 2 1. Value at TC = 25°C 2SJ160, 2SJ161, 2SJ162 Electrical Characteristics (Ta = 25°C) Item Symbol Min V(BR)DSX Typ Max Unit Test conditions –120 — — V I D = –10 mA , VGS = 10 V Drain to source 2SJ160 breakdown voltage 2SJ161 –140 — — V 2SJ162 –160 — — V Gate to source breakdown voltage V(BR)GSS ±15 — — V I G = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V I D = –100 mA, VDS = –10 V Drain to source saturation voltage VDS(sat) — — –12 V I D = –7 A, VGD = 0*1 Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = –3 A, VDS = –10 V*1 Input capacitance Ciss — 900 — pF VGS = 5 V, VDS = –10V, Output capacitance Coss — 400 — pF f = 1 MHz Reverse transfer capacitance Crss — 40 — pF Turn-on time t on — 230 — ns Turn-off time t off — 110 — ns Note: VDD = –20 V, ID = –4 A 1. Pulse test 3 2SJ160, 2SJ161, 2SJ162 Maximum Safe Operation Area Power vs. Temperature Derating –20 150 10 ms 1 Sh Sh ot) = (T C s( (1 n ot 25 ) °C –1.0 ) Drain Current ID (A) = tio –2 (–120 V, –0.83 A) (–140 V, –0.71 A) (–160 V, –0.63 A) 2SJ160 2SJ161 2SJ162 –0.5 –0.2 –5 150 Typical Output Characteristics Typical Transfer Characteristics –1.0 TC = 25°C VDS = –10 V –9 –7 –6 –6 –5 –4 –4 Pch 0W –3 –2 = 10 T –8 C –0.8 Drain Current ID (A) –8 75 –10 –10 –20 –50 –100 –200 –500 Drain to Source Voltage VDS (V) 25 °C 25 50 100 Case Temperature TC (°C) =– 0 Drain Current ID (A) PW ra 50 e Op 100 ID max (Continuous) PW (–14.3 V, –5 –7 A) = 10 0 m DC Channel Dissipation Pch (W) Ta = 25°C –10 –0.6 –0.4 –0.2 –2 –1 V VGS = 0 0 4 –10 –30 –40 –20 –50 Drain to Source Voltage VDS (V) 0 –0.4 –1.2 –1.6 –2.0 –0.8 Gate to Source Voltage VGS (V) 2SJ160, 2SJ161, 2SJ162 Switching Time vs. Drain Current Switching Time ton, toff (ns) 500 200 ton 100 50 toff 20 10 5 –0.1 –0.2 –5 –0.5 –1.0 –2 Drain Current ID (A) Switching Time Test Circuit –10 Waveforms Output 10% RL Input Input 90% ton PW = 50 µs duty ratio = 1% –20 V toff 90% 50 Ω Output 10% 6 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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