2SK1620(L), 2SK1620(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 1 2 3 3 D G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1620(L), 2SK1620(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 10 A 40 A 10 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1620(L), 2SK1620(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 150 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA VDS = 120 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V I D = 1 mA, VDS = 10 V Static Drain to source on state resistance RDS(on) — 0.12 0.15 Ω I D = 5 A, VGS = 10 V *1 Forward transfer admittance |yfs| 4.0 7.0 — S I D = 5 A, VDS = 10 V *1 Input capacitance Ciss — 1200 — pF VDS = 10 V, VGS = 0, Output capacitance Coss — 550 — pF f = 1 MHz Reverse transfer capacitance Crss — 85 — pF Turn-on delay time t d(on) — 20 — ns I D = 5 A, VGS = 10 V, Rise time tr — 50 — ns RL = 6 Ω Turn-off delay time t d(off) — 70 — ns Fall time tf — 40 — ns Body to drain diode forward voltage VDF — 1.2 — V I F = 10 A, VGS = 0 Body to drain diode reverse recovery time t rr — 220 — ns I F = 10 A, VGS = 0, diF/dt = 50 A/µs Note 1. Pulse test See characteristic curves of 2SK740. 3 2SK1620(L), 2SK1620(S) Power vs. Temperature Derating Channel Dissipation Pch (W) 60 40 20 0 4 50 100 Case Temperature TC (°C) 150 Unit: mm 2.54 ± 0.5 (1.4) 2.54 ± 0.5 11.3 ± 0.5 10.0 1.27 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 11.0 ± 0.5 1.2 ± 0.2 1.3 ± 0.2 + 0.3 – 0.5 8.6 ± 0.3 10.2 ± 0.3 4.44 ± 0.2 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) LDPAK (L) — — 1.4 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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