ST330S Phase Control Thyristors STUD VERSION L iu j in g re ct i f ie r c o . , L t d . FEATURES TYPICAL APPLICATIONS 1). Center amplifying gate 1). DC motor controls 2). Hermetic metal case with ceramic insulator 2). Controlled DC power supplies 3). International standard case TO-209AE (TO-118) 3). AC controllers 4). Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5 5). Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling MAJOR RATINGS AND CHARACTERISTICS ST330S Unit 330 A 75 ℃ 520 A @ 50Hz 9000 A @ 60Hz 9420 A @ 50Hz 405 KA2s @ 60Hz 370 KA2s 400 to 1600 V 100 μs - 40 to 125 ℃ Parameters IF(AV) @ TC IF(RMS) IFSM I2t VDRM/VRRM Tq typical TJ ELECTRICAL SPECIFICATIONS 1). Voltage Ratings Type number ST330S www.china-liujing.com VDRM/VRRM, maximum repetitive peak reverse voltage VRSM, maximum nonrepetitive peak reverse voltage V V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 Voltage Code IDRM/IRRM, max. @ TJ = TJ max mA 50 1/6 ST330S 2). Forward Conduction ST330S Unit Max. average forward current 330 A @ Case temperature 75 ℃ 520 A Parameters IT(AV) IT(RMS) Max. RMS forward current I2t t = 8.3ms reapplied t = 10ms 100% VRRM 7920 t = 8.3ms reapplied Sinusoidal half wave, 405 t = 10ms No voltage Initial TJ = TJ max. t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 9420 non-repetitive surge current 7570 370 287 A KA2s 262 2 I √t 2 Maximum I √t for fusing 4050 VT(TO)1 Low level value of threshold voltage 0.91 VT(TO)2 High level value of threshold voltage 0.92 rt1 Low level value of forward slope resistance 0.58 rt2 High level value of forward slope resistance 0.57 VTM Max. forward voltage drop 1.51 IH Maximum holding current 600 IL Typical latching current 1000 di/dt td Max. non-repetitive rate of rise of turned-on current Typical delay time 1000 2 KA √s t = 0.1 to 10ms, no voltage reapplied V mΩ V mA A/μs dv/dt Typical turn-off time Maximum critical rate of rise of off-state voltage IDRM Max. peak reverse and off-state IRRM leakage current www.china-liujing.com (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. (I > π x IF(AV)), TJ = TJ max. Ipk= 1040A, TJ = TJ max, tp = 10ms sine pulse TJ = 25℃, anode supply 12V resistive load Gate drive 20V, 20Ω, tr ≤ 1μs TJ = TJ max, anode voltage ≤ 80% VDRM Gate current 1A, dig/dt = 1A/μs 1.0 μs tq DC @ 62℃ case temperature No voltage Max. peak, one-cycle forward, Maximum I2t for fusing 180° conduction, half sine wave t = 10ms 9000 ITSM Conditions Vd = 0.67% V , T = 25℃VDRM, TJ =25℃ ITM = 550A, TJ = TJ max, di/dt = 40A/μs, VR = 50V 100 dv/dt = 20V/μs, Gate 0V 100Ω, tp = 500μs 500 V/μs TJ = TJ max. linear to 80% rated VDRM 50 mA TJ = TJ max. rated VDRM/VRRM applied 2/6 ST330S 3). Triggering Parameters PGM ST330S Maximum peak gate power 10.0 PG(AV) Maximum average gate power 2.0 IGM Max. peak positive gate current 3.0 +VGM Max. peak positive gate current 20 -VGM Maximum peak positive gate voltage 5.0 IGT VGT IGD Unit DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger TYP. MAX. 200 - 100 200 50 Conditions W TJ = TJ max, tp ≤ 5ms A TJ = TJ max, f = 50Hz, d% = 50 V TJ = TJ max, tp ≤ 5ms mA TJ = - 40℃ TJ = 25℃ Max. required gate trigger - TJ = 125℃ current/voltage are the 2.5 - TJ = - 40℃ 1.8 3 1.1 - V TJ = 25℃ DC gate voltage not to trigger will trigger all units 6V anode-to-cathode applied TJ = 125℃ Max. gate current/ voltage mA 10 not to trigger is the max. TJ = TJ max. VGD lowest value which any unit with rated V DRM V 0.25 value which. will not trigger anode-to-cathode applied TJ Max. operating temperature range -40 to 125 ℃ Tstg Max. storage temperature range -40 to 150 ℃ RthJC Max. thermal resistance, junction to case 0.10 K/W DC operation RthCS Max. thermal resistance, case to heatsink 0.03 K/W Mounting surface, smooth, flat and greased 48.5 Nm (425) (lbf-in) 535 g T Mounting torque wt Approximate weight Case style Non lubricated threads See Outline Table TO-118 ΔRthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 www.china-liujing.com Units Conditions K/W TJ = TJ max. 3/6 ST330S 130 R 120 thJC (DC ) = 0.10 K/ W 110 C o nd uc tio n An g le 100 30° 90 60° 90° 80 70 0 50 100 150 120° 200 180° 250 300 130 Ma xim um Allow a b le Ca se Te mp era ture (°C ) Ma xim um Allo w a b le C a se Tem p era ture (°C ) PERFORMANCE CURVES FIGURE 350 R t hJC (DC ) = 0.10 K/W 120 110 C o nd uc tio n Pe riod 100 90 80 30° 70 60 0 100 0. 08 e lt -D K/ W a R 240 0.3 K/ W 0.4 K/ W 200 160 Co nd uct io n Ang le 0. 6 K /W 120 1.2 K/ 80 W TJ = 125°C 40 0 K/ W /W 3K 0.2 K/ W 0. 0 0. 12 RM S Lim it 280 500 = 320 DC 400 A 360 180° 300 Fig. 2 - Current Ratings Characteristics 180° 120° 90° 60° 30° 400 200 hS R t Ma ximum Ave ra g e On-sta te Pow er Loss (W) Fig. 1 - Current Ratings Characteristics 440 90° 120° Avera g e On-sta te C urrent (A) Avera g e O n-sta te C urren t (A) 480 60° 0 40 80 25 120 160 200 240 280 320 Ave ra g e On-sta te C urren t (A) 50 75 100 125 Ma ximum Allow a b le Amb ient Tem p era ture (°C ) 650 DC 180° 120° 90° 60° 30° 600 SA = -D ta el R C o nd u ctio n Pe rio d 0. 6 K /W TJ = 125°C 50 0 K/ W 0.2 K/ W 0.3 K/ W 300 RMS Limit 250 200 150 100 K/ W W K/ 0. 08 0.1 2 03 0. 400 350 th 550 500 450 R Ma xim um Ave ra g e On -sta te Pow e r Lo ss (W) Fig. 3 - On-state Power Loss Characteristics 0 100 200 300 400 Ave ra g e On-sta te C urre nt (A) 1.2 K/ W 500 25 50 75 100 125 Ma ximum Allow a b le Amb ie nt Te mp e ra ture (°C ) 7500 At Any Ra te d Loa d C on ditio n An d With Ra ted VRRM Ap p lied Fo llow ing Surg e . Initia l TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 7000 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 Numb e r Of Eq ua l Amp litud e Ha lf C ycle Curre nt Pulse s (N) Fig. 5 - Maximum Non-Repetitive Surge Current www.china-liujing.com Pea k Ha lf Sine Wa ve On-sta te Curren t (A ) Pea k Ha lf Sine Wa ve On-sta te Current (A) Fig. 4 - On-state Power Loss Characteristics 8500 Ma ximum Non Rep e titive Surg e Curre nt Ve rsus Pulse Tra in Dura tion . Co ntrol 7500 O f C on d uc tio n Ma y No t Be Ma in ta in ed . Initia l TJ = 125°C 7000 No Volta g e Rea p p lied Ra ted VRRM Rea p p lied 6500 8000 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 Pulse Tra in Dura tio n (s) Fig. 6 - Maximum Non-Repetitive Surge Current 4/6 ST330S 10000 In sta n ta ne o us On-sta te Current (A) TJ = 25°C TJ = 125°C 1000 100 0 1 2 3 4 5 6 7 8 9 In sta nta n eo us O n-sta te Volta g e (V) Tra n sient The rm a l Imp ed a nc e Z thJC (K/ W) Fig. 7 - On-state Voltage Drop Characteristics 1 Ste a d y Sta t e Va lue R t hJC = 0.10 K/ W (DC Op era tion ) 0.1 0.01 0. 001 0.001 0.01 0.1 1 10 Sq ua re Wa ve Pulse Durat ion (s) Fig. 8 - Thermal Impedance ZthJC Characteristic Rec t a ng ula r g a te p ulse a) Rec o mme nd ed loa d line fo r ra te d d i/ d t : 20V, 10oh ms; tr<=1 µs b ) Rec omme nd ed loa d line f or <=30% ra t ed di/ dt : 10V, 10ohm s 10 t r<=1 µs (1) PGM (2) PGM (3) PGM (4) PGM = 10W, = 20W, = 40W, = 60W, tp tp tp tp = 4m s = 2m s = 1m s = 0.66ms (a ) (b ) Tj=-40 °C 1 Tj=25 °C Tj=125 °C Inst a nt an eous G at e Vo lt ag e (V) 100 (1) (2) (3) (4) VG D IGD 0.1 0.001 0.01 Fre que nc y Limite d b y PG(AV) 0.1 1 10 100 Insta nt a neo us Ga t e Current (A) Fig. 9 - Gate Characteristics www.china-liujing.com 5/6 ST330S OUTLINE Case Style TO-118 E-mail: [email protected] YUEQING LIUJING RECTIFIER CO., LTD Sale Departmant: Liujing Building, Yueqing City, Zhejiang Province Add: Wanao Industrial Zone, Yueqing city, Zhejiang Province Tel: 0086-577-62519692 0089-577-62519693 Fax: 0086-577-62518692 International Export: 0086-577-62571902 Technical Support: 0086-15868768965 After Service: 400-6606-086 http://www.china-liujing.com http://www.liujingdianqi.cn http://www.cnrectifier.com http://www.cnthyristor.com.cn MSN: [email protected] [email protected] 打造最具竞争力的电力半导体产品 To be the most competitive Power Semiconductor Devices manufactory. 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