Order this document by MHW1910/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET • Specified 26 Volts, 1930–1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts Efficiency = 34% Min @ 10 Watts • 50 Ω Input/Output System • Designed for GSM Linearity Requirements 10 W, 1930 – 1990 MHz RF POWER AMPLIFIER CASE 301AW–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VS 28 Vdc DC Bias Voltage Vbias 28 Vdc RF Input Power Pin 21 dBm Pout 20 W Operating Case Temperature Range TC – 10 to +90 °C Storage Temperature Range Tstg – 30 to +100 °C DC Supply Voltage RF Output Power ELECTRICAL CHARACTERISTICS (TC = +25°C, VS = 26 Vdc; Vbias = 5 Vdc; 50 Ω system, unless otherwise noted) Symbol Min Typ Max Unit Frequency Range BW 1930 — 1990 MHz Quiescent Current (Pin = 0 mW) IDQ 100 — 150 mA Bias Current Ibias — — 2 mA Output Power at 1 dB Compression P1dB 10 14 — W GP 24 26 28 dB η 34 — — % VSWRin — — 1.8:1 — Harmonics at 2fo H2 — — – 35 dBc Harmonics at 3fo H3 — — – 45 dBc IMDr — — – 50 dBc Characteristic Power Gain (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Reverse IMD; Pout = 10 W; Preverse = –40 dBc (F1 = F0 ±200 kHz @ –40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles ψ No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS ≤ 26 Vdc) Load VSWR = 5:1, All Phase Angles — All Spurious Outputs More Than 60 dB Below Desired Signal NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 RF DEVICE DATA MOTOROLA Motorola, Inc. 1999 MHW1910–1 1 EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = –10 to + 85°C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 Ω system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 1930 — 1990 MHz Quiescent Current (Pin = 0 mW) IDQ 100 — 160 mA Bias Current Ibias — — 2 mA Output Power at 1 dB Compression P1dB 8 — — W GP — 5 6.5 dB η 32 — — % VSWRin — — 2:1 — Harmonics at 2fo H2 — — – 35 dBc Harmonics at 3fo H3 — — – 45 dBc IMDr — — – 46 dBc Power Gain Variation for a Given Part (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Reverse IMD; Pout = 10 W; Preverse = –40 dBc (F1 = F0 ±200 kHz @ –40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles ψ No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS ≤ 26 Vdc) Load VSWR = 5:1, All Phase Angles — All Spurious Outputs More Than 60 dB Below Desired Signal BIAS REGULATION Vbias VS RF IN RF OUT Figure 1. Internal Diagram MHW1910–1 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 44 60 50 38 η, EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 42 40 36 34 Pout @ 1930 MHz 32 30 40 30 η @ 1990 MHz 20 28 Pout @ 1990 MHz 26 10 24 0 22 0 2 4 6 8 10 12 14 16 Pin, INPUT POWER (dBm) 18 20 22 0 24 Figure 2. Output Power versus Input Power 4 6 20 22 24 Pout = 10 W 29 Pout = 10 W TC = –10°C G p , POWER GAIN (dB) 28 20 16 12 8 27 TC = 25°C 26 25 24 TC = 85°C 23 4 22 0 1700 1800 1900 2000 f, FREQUENCY (MHz) 2100 21 1920 2200 Figure 4. Power Gain versus Frequency 42 1.3 G p , POWER GAIN VARIATION (dB) 1.5 TC = –10°C 40 39 TC = 25°C 38 TC = 85°C 37 Pout = 10 W 36 1930 1940 1950 1960 1970 1980 1990 f, FREQUENCY (MHz) Figure 6. Efficiency versus Frequency MOTOROLA RF DEVICE DATA 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) 1980 1990 2000 Figure 5. Gain versus Frequency 43 41 η, EFFICIENCY (%) 18 30 24 35 1920 8 10 12 14 16 Pin, INPUT POWER (dBm) Figure 3. Efficiency versus Input Power 28 G p , POWER GAIN (dB) 2 Pout = 0.5 W to 10 W 1.1 0.9 TC = 85°C 0.7 0.5 TC = 25°C 0.3 0.1 TC = –10°C –0.1 –0.3 2000 –0.5 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 7. Power Gain Variation versus Frequency MHW1910–1 3 TYPICAL CHARACTERISTICS 15.5 1.0 TC = –10°C 15 14.5 0.8 R p , GAIN RIPPLE (dB) TC = 25°C P1dB (W) 14 13.5 13 TC = 85°C 12.5 12 0.6 Rp 0.4 0.2 11.5 11 1920 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) 1980 1990 2000 0 –20 –10 Figure 8. P1dB versus Frequency 0 10 20 30 40 50 TEMPERATURE (°C) 60 70 80 90 Figure 9. Gain Ripple versus Temperature 1.22 1.20 VSWR in , INPUT VSWR 1.18 1.16 1.14 1.12 1.10 Pout = 10 W 1.08 1.06 1.04 1.02 1.00 1750 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 10. Input VSWR MHW1910–1 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F IS FROM THE BOTTOM OF HEATSINK TO THE TOP OF THE LEAD. 4. DIMENSION P TO BE MEASURED AS LEAD EXITS COVER. 5. FLANGE FLATNESS 0.038 (0.0015) MAXIMUM CONVEX, 0.063 (0.0025) MAXIMUM CONCAVE. 6. ADHESIVE MATERIAL SHALL BE INCLUDED IN THE DIMENSIONS LISTED. G 0.25 (0.010) B M T A M A R –S– 0.25 (0.010) 1 2 T A M M 3 4 Q 2 PL 0.13 (0.005) V M T S W N A H D 4 PL 0.25 (0.010) T A M M E C –T– SEATING PLANE J F M DIM A B C D E F G H J K N P Q R S V W INCHES MIN MAX 1.890 1.910 1.170 1.190 0.350 0.376 0.018 0.022 0.115 0.135 0.170 BSC 1.600 BSC 1.265 BSC 0.325 0.375 0.225 ––– 1.165 BSC 0.010 REF 0.150 0.160 0.685 0.705 0.598 0.612 0.365 BSC 0.465 BSC STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 48.01 48.51 29.72 30.22 8.89 9.55 0.46 0.55 2.92 3.42 4.31 BSC 40.64 BSC 32.13 BSC 8.25 9.52 5.72 ––– 29.59 BSC 0.25 REF 3.81 4.06 17.40 17.90 15.18 15.54 9.27 BSC 11.81 BSC RF IN V BIAS V SUPPLY RF OUT NOTE 3 P K 4 PL 0.25 (0.010) 4 PL M T VIEW A–A CASE 301AW–02 ISSUE B Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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