Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35% 25 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON • Intermodulation Distortion @ 25 W (PEP) — IMD = – 30 dB (Max) • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Class A and AB Characterization • BLX 13 Equivalent CASE 211–07, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 3.0 Adc Withstand Current — 5 s — 6.0 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 70 0.4 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 2.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICES — — 10 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF426 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 10 35 — — Cob — 60 80 pF Common–Emitter Amplifier Gain (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) GPE 22 25 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) η 35 — — % Intermodulation Distortion (2) (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA) IMD(d3) — – 35 – 30 dB ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (SSB) ψ Load Mismatch (VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 25 mA, VSWR 30:1 at All Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (2) and Power Gain (VCC = 28 Vdc, Pout = 8.0 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, ICQ = 1.2 Adc) GPE IMD(d3) IMD(d5) — — — 23.5 – 40 – 55 — — — dB NOTE: 2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone. RFC2 C8 + RFC1 28 Vdc BIAS INPUT C9 L3 C6 C7 CR1 L2 L4 RF INPUT – C3 RF OUTPUT C5 L1 DUT C1 C2 R1 C1, C2 — ARCO 469, 190– 780 pF C3, C4 — ARCO 464, 25– 280 pF C5 — 120 pF Dipped Mica C6, C7 — 100 µF, 15 Vdc C8 — 680 pF F.T. Allen Bradley C9 — 1.0 µF 35 V Tantalum CR1 — 1N4997 C4 L1 — 3 Turns #16 0.25″ ID L2 — 6 Turns #16 0.5″ ID L3 — 7 Turns #20 0.38″ ID L4 — 10 µH Molded Choke Delevan RFC1 — Ferroxcube VK200/20–4B RFC2 — 3–Ferroxcube 5653065–3B RF — Input/Output Connectors UG53 A/µ R1 — 10 Ω 1/2 Watt 10% Adjust Bias (Base) for ICQ = 20 mA with No RF Applied Figure 1. 30 MHz Linear Test Circuit MRF426 2 MOTOROLA RF DEVICE DATA 40 f = 30 MHz ICQ = 25 mA VCC = 28 Vdc 40 Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS) 50 30 20 10 0 0 40 60 Pin, INPUT POWER (mW) 20 80 f = 30, 30.001 MHz ICQ = 25 mA IMD(d3) = – 35 dB 30 20 10 0 16 100 Figure 2. Output Power versus Input Power IMD, INTERMODULATION DISTORTION (dB) G PE , POWER GAIN (dB) 35 30 25 15 1.5 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 32 Figure 3. Output Power versus Supply Voltage 40 20 24 28 20 VCC, SUPPLY VOLTAGE (VOLTS) 30 – 25 – 30 d3 – 35 d5 – 40 f = 30, 30.001 MHz ICQ = 25 mA VCC = 28 V – 45 – 50 0 Figure 4. Power Gain versus Frequency 10 20 30 Pout, OUTPUT POWER (WATTS PEP) Figure 5. Intermodulation Distortion versus Output Power IC, COLLECTOR CURRENT (AMP) 5 2.5 TC = 25°C 1 0.5 0.25 0.1 0.05 1 2 5 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 Figure 6. DC Safe Operating Area MOTOROLA RF DEVICE DATA MRF426 3 25 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 2000 Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) 2500 1500 1000 500 0 1.5 2 3 5 7 10 f, FREQUENCY (MHz) 15 20 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 15 5 30 1.5 Figure 7. Output Capacitance versus Frequency 3 5 7 10 f, FREQUENCY (MHz) 15 20 30 Figure 8. Output Resistance versus Frequency 0 1.0 2 1.0 2.0 2.0 1.0 3.0 3.0 30 4.0 4.0 2.0 5.0 5.0 3.0 15 6.0 4.0 7.5 7.0 5.0 6.0 8.0 7.0 4.0 8.0 9.0 f = 2.0 MHz 10.0 9.0 10.0 12.0 12.0 Zo = 10 Ω 6.0 VCC = 28 V ICQ = 25 mA Pout = 25 W PEP 7.0 f MHz Zin Ohms 2.0 4.0 7.5 15 30 6.20 – j6.65 4.65 – j5.50 3.25 – j4.05 2.45 – j2.90 1.4 – j0.77 14.0 8.0 9.0 10.0 12.0 16.0 18.0 14.0 20.0 14.0 Figure 9. Series Equivalent Input Impedance MRF426 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M Q M 1 DIM A B C D E H J K M Q R S U 4 R 2 S B 3 D K STYLE 1: PIN 1. 2. 3. 4. J H C E INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 EMITTER BASE EMITTER COLLECTOR SEATING PLANE CASE 211–07 ISSUE N MOTOROLA RF DEVICE DATA MRF426 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF426 6 ◊ *MRF426/D* MRF426/D MOTOROLA RF DEVICE DATA